< Silicon RF Power MOS FET (Discrete) > RD00HHS1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W DESCRIPTION OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications. 4.4+/-0.1 TYPE NAME High power gain Pout>0.3W, Gp>19dB @Vdd=12.5V,f=30MHz 3.9+/-0.3 LOT No. 0.8 MIN 2.5+/-0.1 FEATURES 1.5+/-0.1 1.6+/-0.1 1 0. 1 2 1.5+/-0.1 3 0.4 +0.03 -0.05 1.5+/-0.1 0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 0.1 MAX APPLICATION For output stage of high power amplifiers in HF Band Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm mobile radio sets. RoHS COMPLIANT RD00HHS1-101,T113 is a RoHS compliant products. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.) ABSOLUTE MAXIMUM RATINGS SYMBOL (Tc=25°C UNLESS OTHERWISE NOTED) PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage Vgs=0V 30 V VGSS Gate to source voltage Vds=0V 10 V Pch Channel dissipation Tc=25°C 3.1 W Pin Input power Zg=Zl=50 10 mW ID Drain current - 200 mA Tch Channel Temperature - 150 °C Tstg Storage temperature - -40 to +125 °C Rth j-c Thermal resistance 40 °C/W Junction to case Note 1: Above parameters are guaranteed independently. Publication Date : Oct．2011 1 < Silicon RF Power MOS FET (Discrete) > RD00HHS1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS LIMITS UNIT MIN TYP MAX. IDSS Zero gate voltage drain current VDS=17V, VGS=0V - - 25 uA IGSS Gate to source leak current VGS=10V, VDS=0V - - 1 uA Vth Gate threshold Voltage VDS=12V, IDS=1mA 1 2 3 V Pout Output power VDD=12.5V, Pin=4mW, 0.3 0.7 - W Drain efficiency f=30MHz,Idq=50mA 55 65 - % D Note : Above parameters , ratings , limits and conditions are subject to change. Publication Date : Oct．2011 2 < Silicon RF Power MOS FET (Discrete) > RD00HHS1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W TYPICAL CHARACTERISTICS CHANNEL DISSIPATION VS. AMBIENT TEMPERATURE 4 Vgs-Ids CHARACTERISTICS 0.6 CHANNEL DISSIPATION Pch(W) ... *1:The material of the PCB Glass epoxy (t=0.6 mm) Ta=+25°C Vds=10V 0.5 3 0.4 Ids(A) On PCB(*1) with Heat-sink 2 0.3 0.2 1 0.1 On PCB(*1) 0.0 0 0 40 80 120 160 AMBIENT TEMPERATURE Ta(°C) 0 200 Vds-Ids CHARACTERISTICS 2 3 Vgs(V) 4 5 Vds VS. Ciss CHARACTERISTICS 1.4 20 Ta=+25°C 1.2 Ta=+25°C f=1MHz Vgs=10V Vgs=9V Vgs=8V 15 Vgs=7V 1.0 Vgs=6V 0.8 0.6 Ciss(pF) Ids(A) 1 Vgs=5V 0.4 10 5 Vgs=4V 0.2 Vgs=3V 0 0.0 0 2 4 6 Vds(V) 8 0 10 Vds VS. Coss CHARACTERISTICS 10 Vds(V) 15 20 Vds VS. Crss CHARACTERISTICS 20 4 Ta=+25°C f=1MHz Ta=+25°C f=1MHz 3 Crss(pF) 15 Coss(pF) 5 10 2 1 5 0 0 0 5 10 Vds(V) 15 0 20 Publication Date : Oct．2011 3 5 10 Vds(V) 15 20 < Silicon RF Power MOS FET (Discrete) > RD00HHS1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS Pin-Po CHARACTERISTICS 35 1.2 100 60 20 40 ηｄ Ta=+25°C f=30MHz Vdd=12.5V Idq=50mA 15 10 -20 -15 -10 -5 0 Pin(dBm) 5 Pout(W) , Idd(A) 25 ηd(%) Po(dBm) , Gp(dB) , Idd(A) 1.0 80 Gp 90 ηd 0.8 0.6 70 0.4 20 0.2 0 0.0 Idd Vdd-Po CHARACTERISTICS 0.6 0.4 10 +25°C Vds=10V Tc=-25~+75°C +75°C 0.3 0.1 0.2 0.0 0 2 4 6 8 10 Vdd(V) 12 0.0 14 0 Vgs-gm CHARACTORISTICS 0.6 Vds=10V Tc=-25~+75°C 0.5 0.4 gm(S) 8 0.2 40 Po 4 6 Pin(mW) 0.4 80 Idd 50 -25°C 0.5 Ids(A) Po(W) 0.8 2 0.6 Idd(mA) Ta=25°C f=30MHz Pin=4mW Icq=50mA Zg=ZI=50 ohm 60 Vgs-Ids CHARACTORISTICS 2 120 1.0 Ta=25°C f=30MHz Vdd=12.5V Idq=50mA 40 0 10 1.2 80 -25°C 0.3 +25°C 0.2 +75°C 0.1 0.0 0 1 2 3 Vgs(V) 4 5 Publication Date : Oct．2011 4 ηd(%) Po 30 100 Po 1 2 3 Vgs(V) 4 5 < Silicon RF Power MOS FET (Discrete) > RD00HHS1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W TEST CIRCUIT(f=30MHz) Vgg Vdd 330μF、50V 10μF、50V 18mm C1 C2 L4 1k Ω RD00HHS1 180pF Pin 3.0mm 6.0mm 7.0mm 13.0mm 9.0mm L2 9.0mm 7.0mm 2.5mm 4.0mm 8.0mm 22.0mm 14.0mm 7.5mm L3 470pF L1 15Ω 220pF 15pF 15pF 3pF 15pF L1：LAL04NAR27(0.27μH) L2：LAL04NAR39(0.39μH) L3：LAL04NAR39(0.39μH) L4：LAL04NA1R0(1μH) Note:Boad material Glass epoxi substrate Micro strip line width=1.0mm、50 OHM、er:4.8、t=0.6mm C1、C2:100ｐF、0.022μF、0.1μF in parallel RD00HHS1 S-PARAMETER DATA (@Vdd=12.5V, Id=50mA) Freq. [MHz] 10 30 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 S11 (mag) 1.002 1.003 1.005 1.007 0.989 0.963 0.936 0.911 0.892 0.872 0.857 0.846 0.834 0.830 0.826 0.821 0.815 0.812 0.814 0.816 0.811 0.814 S21 (ang) -3.6 -9.9 -16.8 -33.5 -49.8 -64.0 -76.9 -87.9 -97.7 -106.2 -113.7 -120.1 -126.0 -131.0 -135.9 -140.2 -144.0 -147.5 -151.0 -153.9 -156.8 -159.5 (mag) 12.533 12.631 12.784 12.820 12.355 11.571 10.697 9.791 8.972 8.202 7.533 6.921 6.386 5.894 5.484 5.097 4.749 4.443 4.167 3.904 3.670 3.471 S12 (ang) 178.3 174.6 170.6 159.1 147.5 136.8 127.3 119.1 111.4 104.9 98.9 93.4 88.4 83.7 79.3 75.1 71.0 67.3 63.8 60.1 56.8 53.7 (mag) 0.003 0.008 0.013 0.025 0.035 0.042 0.048 0.053 0.055 0.057 0.058 0.058 0.059 0.058 0.057 0.056 0.055 0.053 0.051 0.049 0.048 0.046 Publication Date : Oct．2011 5 S22 (ang) 90.3 82.8 79.5 67.4 56.5 47.5 38.2 30.6 24.6 18.5 13.1 8.7 4.7 0.2 -2.8 -6.9 -9.8 -13.0 -15.0 -17.6 -20.8 -22.2 (mag) 0.920 0.919 0.918 0.898 0.866 0.824 0.781 0.745 0.711 0.685 0.665 0.649 0.640 0.630 0.625 0.623 0.623 0.623 0.627 0.630 0.634 0.640 (ang) -2.7 -6.9 -11.2 -22.4 -32.8 -42.2 -50.4 -57.9 -64.6 -70.2 -75.5 -80.5 -85.2 -89.2 -93.3 -97.1 -100.7 -104.3 -107.7 -110.9 -113.9 -117.1 470pF POUT < Silicon RF Power MOS FET (Discrete) > RD00HHS1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W ATTENTION: 1.High Temperature ; This product might have a heat generation while operation,Please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. At the near the product,do not place the combustible material that have possibilities to arise the fire. 2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES: 1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices. 2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements and In the application, which is base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain period and others as needed. For the reliability report which is described about predicted operating life time of Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor. 3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD precautions are required. 4. In the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or destroyed due to the RF-swing exceed the breakdown voltage. 5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions. 6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. 7. For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the specification sheet. 8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it’s original form. 9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this data sheet. 10. Please refer to the additional precautions in the formal specification sheet. Publication Date : Oct．2011 6 < Silicon RF Power MOS FET (Discrete) > RD00HHS1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. 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Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. •The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. •If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. •Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. © 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. Publication Date : Oct．2011 7