Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 FEATURES High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz High Efficiency: 65%typ. APPLICATION 1.5+/-0.1 1.6+/-0.1 φ 1 2 1.5+/-0.1 3.9+/-0.3 DESCRIPTION 1 0. 3 0.4 +0.03 -0.05 1.5+/-0.1 0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. 0.1 MAX Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm RoHS COMPLIANT RD01MUS1-101,T113 is a RoHS compliant products. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.) ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input Power Drain Current Channel Temperature Storage temperature Thermal resistance CONDITIONS RATINGS UNIT Vgs=0V 30 V Vds=0V +/-10 V Tc=25°C 3.6 W Zg=Zl=50Ω 100 mW 600 mA °C 150 -40 to +125 °C °C/W Junction to case 34.5 Note: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) SYMBOL PARAMETER IDSS IGSS Vth Pout ηD Zero gate voltage drain current Gate to source leak current Gate threshold Voltage Output power Drain efficiency CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA VDD=7.2V, Pin=30mW f=520MHz,Idq=100mA MIN 1.3 0.8 50 LIMITS TYP 1.8 1.4 65 UNIT MAX 50 1 2.3 - uA uA V W % Note: Above parameters, ratings, limits and conditions are subject to change. RD01MUS1 17 Aug 2010 1/7 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W TYPICAL CHARACTERISTICS CHANNEL DISSIPATION VS. AMBIENT TEMPERATURE Vgs-Ids CHARACTERISTICS 1.0 Ta=+25°C Vds=10V *1:The material of the PCB Glass epoxy (t=0.6 mm) 0.8 3 On PCB(*1) with Heat-sink Ids(A) CHANNEL DISSIPATION Pch(W) ... 4 2 1 On PCB(*1) 0.6 0.4 0.2 0.0 0 0 40 80 120 160 AMBIENT TEMPERATURE Ta(°C) 0 200 Vds-Ids CHARACTERISTICS Ta=+25°C 2 Vgs=10V Vgs=9V 20 Vgs=8V 18 Vgs=7V 16 Ciss(pF) Ids(A) 1.5 Vgs=5V 1 8 6 4 2 Vgs=3V 0 0 0 10 Vds VS. Coss CHARACTERISTICS 5 10 Vds(V) 15 20 Vds VS. Crss CHARACTERISTICS 20 4 18 Ta=+25°C f=1MHz Ta=+25°C f=1MHz 16 3 14 12 Crss(pF) Coss(pF) Ta=+25°C f=1MHz 10 0.5 8 5 12 Vgs=4V 4 6 Vds(V) 4 14 Vgs=6V 2 2 3 Vgs(V) Vds VS. Ciss CHARACTERISTICS 2.5 0 1 10 8 6 2 1 4 2 0 0 0 5 10 Vds(V) 15 0 20 RD01MUS1 5 10 Vds(V) 15 20 17 Aug 2010 2/7 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS Pin-Po CHARACTERISTICS 30 90 Gp 25 1.6 80 70 15 60 10 50 Ta=+25°C f=520MHz Vdd=7.2V Idq=100mA 5 0 -10 ηd(%) ηｄ 20 10 80 1.4 ηd 1.2 60 1.0 0.8 40 Ta=25°C f=520MHz Vdd=7.2V Idq=100mA 0.6 Idd 0.4 40 20 0.2 0.0 30 0 100 Po 1.8 Pout(W) , Idd(A) Po(dBm) , Gp(dB) , Idd(A) 2.0 100 Po ηd(%) 35 0 0 20 Pin(dBm) 20 40 60 Pin(mW) Vdd-Po CHARACTERISTICS 0.8 4.0 Ta=25°C f=520MHz Pin=30mW Idq=100mA Zg=ZI=50 ohm 3.0 Po 0.6 2.5 Po(W) 0.7 0.5 Idd 2.0 0.4 1.5 0.3 1.0 0.2 0.5 0.1 Idd(A) 3.5 0.0 0.0 4 6 8 10 Vdd(V) 12 14 RD01MUS1 17 Aug 2010 3/7 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W TEST CIRCUIT(f=520MHz) Vgg Vdd C1 11m m 10uF,50V C2 18m m 5m m R D01MUS1 4.7kO HM 4m m 30m m 6.5m m L1 4m m 5.5m m 13m m 17.5m m 25.5m m 4m m R F-O UT R F-IN 3m m 62pF 68pF 68O HM 3pF 24pF 62pF 10pF 240pF L1: Enam eled wire 5Turns,D:0.43m m ,2.46m m O .D Note:Board m aterial-glass epoxi substrate C 1,C2: 1000pF,0.022uF in parallel Micro strip line width=1.0m m /50O HM,er:4.8,t=0.6m m INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS 520MHz Zin* Zout* Zo=50Ω Vdd=7.2V, Idq=100mA(Vgg adj.),Pin=0.03W Zin* =3.11+j11.56 Zout*=11.64+j4.74 520MHz Zin* 520MHz Zout* Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of input outputimpedance impedance RD01MUS1 17 Aug 2010 4/7 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W RD01MSU1 S-PARAMETER DATA (@Vdd=7.2V, Id=100mA) Freq. [MHz] 100 150 200 250 300 350 400 450 500 520 550 600 650 700 750 800 850 900 950 1000 1050 1100 S11 (mag) 0.927 0.875 0.833 0.811 0.798 0.791 0.790 0.788 0.794 0.796 0.798 0.801 0.807 0.813 0.817 0.825 0.831 0.837 0.845 0.851 0.857 0.862 (ang) -77.0 -101.2 -117.9 -129.5 -138.0 -144.5 -149.7 -154.1 -158.0 -159.2 -161.2 -164.2 -167.0 -169.3 -171.6 -174.0 -176.0 -178.0 -179.9 178.2 176.5 174.7 S21 (mag) (ang) 19.536 132.3 15.657 116.5 12.662 105.0 10.427 96.2 8.814 89.3 7.548 83.3 6.541 78.2 5.789 73.5 5.106 69.0 4.876 67.5 4.576 65.2 4.120 61.3 3.714 58.0 3.389 54.7 3.092 51.3 2.820 48.6 2.616 46.0 2.401 42.8 2.207 40.9 2.076 38.4 1.912 35.5 1.773 34.0 S12 (mag) 0.043 0.050 0.053 0.054 0.053 0.052 0.051 0.049 0.047 0.046 0.045 0.043 0.041 0.039 0.036 0.033 0.031 0.028 0.026 0.023 0.021 0.018 S22 (ang) 41.3 26.5 16.1 8.4 2.6 -2.4 -6.6 -9.9 -13.3 -14.1 -15.8 -18.5 -21.0 -22.3 -24.9 -25.7 -26.8 -27.8 -27.3 -27.0 -26.3 -23.8 (mag) 0.772 0.687 0.630 0.600 0.588 0.583 0.590 0.597 0.608 0.615 0.622 0.636 0.650 0.666 0.680 0.694 0.711 0.723 0.734 0.749 0.760 0.771 (ang) -63.0 -83.1 -97.3 -107.1 -114.4 -120.1 -124.6 -128.4 -131.7 -133.1 -134.8 -137.3 -140.1 -142.4 -144.6 -146.8 -148.8 -150.9 -152.9 -154.5 -156.3 -158.2 RD01MSU1 S-PARAMETER DATA (@Vdd=12.5V, Id=100mA) Freq. [MHz] 100 150 200 250 300 350 400 450 500 520 550 600 650 700 750 800 850 900 950 1000 1050 1100 S11 (mag) 0.945 0.896 0.856 0.833 0.819 0.810 0.806 0.804 0.808 0.809 0.812 0.813 0.819 0.824 0.827 0.834 0.841 0.845 0.852 0.857 0.864 0.868 (ang) -72.3 -96.7 -113.9 -126.2 -135.1 -141.9 -147.7 -152.2 -156.4 -157.8 -159.9 -163.0 -166.0 -168.6 -171.0 -173.3 -175.5 -177.4 -179.4 178.6 176.9 175.0 S21 (mag) (ang) 19.517 135.2 15.937 119.5 13.050 107.7 10.830 98.6 9.194 91.6 7.890 85.3 6.868 80.1 6.084 75.3 5.382 70.7 5.139 69.1 4.831 66.7 4.356 62.7 3.931 59.3 3.597 56.0 3.283 52.4 2.991 49.8 2.779 47.1 2.554 43.8 2.350 41.9 2.209 39.4 2.035 36.3 1.889 34.8 RD01MUS1 S12 (mag) 0.039 0.046 0.049 0.050 0.050 0.049 0.047 0.046 0.044 0.044 0.042 0.040 0.038 0.036 0.034 0.031 0.029 0.026 0.024 0.022 0.019 0.017 S22 (ang) 44.5 29.2 18.5 11.2 5.0 -0.3 -4.2 -7.7 -11.0 -12.4 -13.7 -16.2 -18.7 -20.8 -22.3 -23.7 -24.6 -25.9 -25.4 -24.3 -23.5 -20.1 (mag) 0.742 0.665 0.612 0.581 0.568 0.565 0.571 0.580 0.591 0.596 0.605 0.618 0.633 0.649 0.664 0.678 0.695 0.708 0.720 0.736 0.747 0.759 (ang) -57.4 -76.6 -90.6 -100.4 -107.8 -113.8 -118.5 -122.3 -126.1 -127.5 -129.4 -132.2 -135.1 -137.6 -140.1 -142.5 -144.5 -146.7 -148.9 -150.7 -152.4 -154.6 17 Aug 2010 5/7 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD01MUS1 Silicon MOSFET Power Transistor 520MHz,1W ATTENTION: 1.High Temperature ; This product might have a heat generation while operation,Please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. At the near the product,do not place the combustible material that have possibilities to arise the fire. 2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES: 1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices. 2. RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements. Examples of critical communications elements would include transmitters for base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, especially for systems that may have a high impact to society. 3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD precautions are required. 4. In the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or destroyed due to the RF-swing exceed the breakdown voltage. 5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions. 6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. 7. For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the specification sheet. 8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it’s original form. 9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this data sheet. 10. Please refer to the additional precautions in the formal specification sheet. RD01MUS1 17 Aug 2010 6/7 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD01MUS1 Silicon MOSFET Power Transistor 520MHz,1W Keep safety first in your circuit designs ! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. 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