NCV8401, NCV8401A Self-Protected Low Side Driver with Temperature and Current Limit NCV8401/A is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh automotive environments. Features • • • • • • • • • Short Circuit Protection Thermal Shutdown with Automatic Restart Over Voltage Protection Integrated Clamp for Inductive Switching ESD Protection dV/dt Robustness Analog Drive Capability (Logic Level Input) NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant http://onsemi.com VDSS (Clamped) RDS(ON) TYP ID MAX (Limited) 42 V 23 mW @ 10 V 33 A* *Max current may be limited below this value depending on input conditions. Drain Overvoltage Protection Gate Input ESD Protection Temperature Limit Current Limit Current Sense Typical Applications • Switch a Variety of Resistive, Inductive and Capacitive Loads • Can Replace Electromechanical Relays and Discrete Circuits • Automotive / Industrial Source MARKING DIAGRAM 1 DPAK CASE 369C STYLE 2 Y WW xxxxx G 2 3 = Year = Work Week = 8401 or 8401A = Pb−Free Package YWW NCV xxxxxG 1 = Gate 2 = Drain 3 = Source ORDERING INFORMATION Device Package Shipping† NCV8401DTRKG DPAK (Pb−Free) 2500/Tape & Reel NCV8401ADTRKG DPAK (Pb−Free) 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2012 July, 2012 − Rev. 10 1 Publication Order Number: NCV8401/D NCV8401, NCV8401A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Internally Clamped VDSS 42 V Drain−to−Gate Voltage Internally Clamped (RGS = 1.0 MW) VDGR 42 V "14 V Gate−to−Source Voltage VGS Drain Current − Continuous ID Total Power Dissipation @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) PD Thermal Resistance, Junction−to−Case Junction−to−Ambient (Note 1) Junction−to−Ambient (Note 2) Internally Limited 1.1 2.0 W RqJC RqJA RqJA 1.6 110 60 °C/W Single Pulse Drain−to−Source Avalanche Energy (VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 3.65 Apk, L = 120 mH, RG = 25 W, TJstart = 150°C) (Note 3) EAS 800 mJ Load Dump Voltage (VGS = 0 and 10 V, RI = 2.0 W, RL = 3.0 W, td = 400 ms) VLD 65 V Operating Junction Temperature TJ −40 to 150 °C Storage Temperature Tstg −55 to 150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Minimum FR4 PCB, steady state. 2. Mounted onto a 2″ square FR4 board (1″ square, 2 oz. Cu 0.06″ thick single−sided, t = steady state). 3. Not subject to production testing. + ID DRAIN IG + VDS GATE SOURCE VGS − − Figure 1. Voltage and Current Convention http://onsemi.com 2 NCV8401, NCV8401A MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 42 42 46 44 50 50 Vdc 1.5 6.5 5.0 50 100 mAdc 1.8 5.0 2.0 Vdc −mV/°C 23 43 29 55 28 50 34 60 VSD 0.80 1.1 V ms OFF CHARACTERISTICS Drain−to−Source Clamped Breakdown Voltage (VGS = 0 Vdc, ID = 250 mAdc) (VGS = 0 Vdc, ID = 250 mAdc, TJ = 150°C) (Note 4) V(BR)DSS Zero Gate Voltage Drain Current (VDS = 32 Vdc, VGS = 0 Vdc) (VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150°C) (Note 4) IDSS Gate Input Current (VGS = 5.0 Vdc, VDS = 0 Vdc) IGSSF mAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = 1.2 mAdc) Threshold Temperature Coefficient VGS(th) Static Drain−to−Source On−Resistance (Note 5) (VGS = 10 Vdc, ID = 5.0 Adc, TJ @ 25°C) (VGS = 10 Vdc, ID = 5.0 Adc, TJ @ 150°C) (Note 4) RDS(on) Static Drain−to−Source On−Resistance (Note 5) (VGS = 5.0 Vdc, ID = 5.0 Adc, TJ @ 25°C) (VGS = 5.0 Vdc, ID = 5.0 Adc, TJ @ 150°C) (Note 4) RDS(on) Source−Drain Forward On Voltage (IS = 5 A, VGS = 0 V) 1.0 mW mW SWITCHING CHARACTERISTICS (Note 4) Turn−ON Time (10% VIN to 90% ID) Turn−OFF Time (90% VIN to 10% ID) Turn−ON Time (10% VIN to 90% ID) Turn−OFF Time (90% VIN to 10% ID) Slew−Rate ON (80% VDS to 50% VDS) Slew−Rate OFF (50% VDS to 80% VDS) VIN = 0 V to 5 V, VDD = 25 V ID = 1.0 A, Ext RG = 2.5 W tON 41 50 tOFF 129 150 VIN = 0 V to 10 V, VDD = 25 V, ID = 1.0 A, Ext RG = 2.5 W tON 16 25 tOFF 164 180 −dVDS/dtON 1.27 2.0 dVDS/dtOFF 0.36 0.75 25 11 30 16 35 21 30 18 35 25 40 28 150 175 200 Vin = 0 to 10 V, VDD = 12 V, RL = 4.7 W V/ms SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) Current Limit ILIM VGS = 5.0 V, VDS = 10 V VGS = 5.0 V, TJ = 150°C (Note 4) VGS = 10 V, VDS = 10 V VGS = 10 V, TJ = 150°C (Note 4) Temperature Limit (Turn−off) VGS = 5.0 V (Note 4) TLIM(off) VGS = 5.0 V DTLIM(on) Thermal Hysteresis Temperature Limit (Turn−off) 15 150 165 °C °C VGS = 10 V (Note 4) TLIM(off) VGS = 10 V DTLIM(on) 15 VGS = 5 V ID = 1.0 A IGON 50 100 400 700 0.1 0.5 0.7 1.0 0.6 1.0 2.0 4.0 Thermal Hysteresis Adc 185 °C °C GATE INPUT CHARACTERISTICS (Note 4) Device ON Gate Input Current VGS = 10 V ID = 1.0 A Current Limit Gate Input Current VGS = 5 V, VDS = 10 V IGCL VGS = 10 V, VDS = 10 V Thermal Limit Fault Gate Input Current VGS = 5 V, VDS = 10 V IGTL VGS = 10 V, VDS = 10 V mA mA mA ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 4) ESD Electro−Static Discharge Capability Human Body Model (HBM) Machine Model (MM) 4. Not subject to production testing. 5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. http://onsemi.com 3 4000 400 V NCV8401, NCV8401A TYPICAL PERFORMANCE CURVES 10,000 Emax (mJ) IL(max) (A) 100 TJstart = 25°C 10 TJstart = 25°C 1,000 TJstart = 150°C TJstart = 150°C 1 10 100 100 L (mH) 10 Figure 2. Single Pulse Maximum Switch−off Current vs. Load Inductance 100 L (mH) Figure 3. Single Pulse Maximum Switching Energy vs. Load Inductance 100 10,000 Emax (mJ) IL(max) (A) TJstart = 25°C 10 TJstart = 25°C 1,000 TJstart = 150°C TJstart = 150°C 1 100 Time in Clamp (ms) Figure 4. Single Pulse Maximum Inductive Switch−off Current vs. Time in Clamp Figure 5. Single Pulse Maximum Inductive Switching Energy vs. Time in Clamp 6V 40 7V 8V 30 9V −40°C 25 10 V 35 25°C 30 20 5V 4V 25 20 15 0 1 2 3 4 150°C 5 VGS = 2.5 V 5 100°C 15 10 3V 10 0 1 Time in Clamp (ms) 45 ID (A) 100 10 ID (A) 1 0 5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS (V) VGS (V) Figure 6. On−state Output Characteristics at 255C Figure 7. Transfer Characteristics (VDS = 10 V) http://onsemi.com 4 NCV8401, NCV8401A TYPICAL PERFORMANCE CURVES 45 80 ID = 3 A 70 150°C RDS(on) (mW) 40 25°C 25 20 20 15 −40°C 3 4 5 6 7 8 9 10 10 100°C, VGS = 5 V 30 30 100°C, VGS = 10 V 25°C, VGS = 5 V 25°C, VGS = 10 V −40°C, VGS = 5 V 1 −40°C, VGS = 10 V 3 5 7 9 VGS (V) ID (A) Figure 8. RDS(on) vs. Gate−Source Voltage Figure 9. RDS(on) vs. Drain Current 2.00 45 1.75 40 1.50 35 ILIM (A) RDS(on) (mW) NORMALIZED RDS(on) 100°C 50 VGS = 5 V 1.25 −40°C 25°C 30 25 1.00 0.75 0 20 60 40 100°C 20 VGS = 10 V 0.50 −40 −20 80 100 120 15 140 150°C 5 6 7 8 9 T (°C) VGS (V) Figure 10. Normalized RDS(on) vs. Temperature (ID = 5 A) Figure 11. Current Limit vs. Gate−Source Voltage (VDS = 10 V) 45 10 100 40 10 150°C VGS = 10 V 35 1 IDSS (mA) ILIM (A) 150°C, VGS = 10 V 35 60 10 150°C, VGS = 5 V 40 30 0.1 100°C 25 0.01 25°C 20 0.001 VGS = 5 V 15 −40 −20 0 20 40 60 80 100 120 0.0001 140 −40°C 10 15 20 25 30 35 TJ (°C) VDS (V) Figure 12. Current Limit vs. Junction Temperature (VDS = 10 V) Figure 13. Drain−to−Source Leakage Current (VGS = 0 V) http://onsemi.com 5 40 NCV8401, NCV8401A 1.0 1.1 0.9 −40°C 1.0 0.8 25°C VSD (V) 1.2 0.9 0.7 0.5 0 20 40 80 60 100 0.4 120 140 DRAIN−SOURCE VOLTAGE SLOPE (V/ms) tf 50 tr td(on) 4 5 6 7 8 9 10 5 6 7 9 8 10 2.0 −dVDS/dt(on) 1.5 1.0 dVDS/dt(off) 0.5 0 3 4 5 6 7 8 9 10 VGS (V) Figure 16. Resistive Load Switching Time vs. Gate−Source Voltage (VDD = 25 V, ID = 5 A, RG = 0 W) Figure 17. Resistive Load Switching Drain−Source Voltage Slope vs. Gate−Source Voltage (VDD = 25 V, ID = 5 A, RG = 0 W) td(off), VGS = 10 V 100 td(off), VGS = 5 V 75 tf, VGS = 10 V tf, VGS = 5 V 50 tr, VGS = 5 V td(on), VGS = 5 V td(on), VGS = 10 V 0 4 VGS (V) 125 0 3 Figure 15. Source−Drain Diode Forward Characteristics (VGS = 0 V) 100 25 2 Figure 14. Normalized Threshold Voltage vs. Temperature (ID = 1.2 mA, VDS = VGS) td(off) 3 1 IS (A) 150 0 150°C T (°C) 200 TIME (ms) 100°C 0.6 0.6 −40 −20 TIME (ms) 0.7 0.8 500 1000 tr, VGS = 10 V 1500 2000 DRAIN−SOURCE VOLTAGE SLOPE (V/ms) NORMALIZED VGS(th) (V) TYPICAL PERFORMANCE CURVES 2.0 −dVDS/dt(on), VGS = 10 V 1.8 1.6 1.4 1.2 1.0 0.8 −dVDS/dt(on), VGS = 5 V 0.6 0.4 0.2 0 dVDS/dt(off), VGS = 5 V 0 500 dVDS/dt(off), VGS = 10 V 1000 1500 2000 RG (W) RG (W) Figure 18. Resistive Load Switching Time vs. Gate Resistance (VDD = 25 V, ID = 5 A) Figure 19. Drain−Source Voltage Slope during Turn On and Turn Off vs. Gate Resistance (VDD = 25 V, ID = 5 A) http://onsemi.com 6 NCV8401, NCV8401A TYPICAL PERFORMANCE CURVES 250 225 RqJA (°C/W) 200 175 150 125 100 75 PCB Cu thickness, 1.0 oz 50 25 PCB Cu thickness, 2.0 oz 0 100 200 300 400 500 600 COPPER HEAT SPREADER AREA 700 800 (mm2) Figure 20. RqJA vs. Copper Area RqJA 788 mm2 C°/W, 2 oz. Copper 100 50% Duty Cycle 10 1 20% 10% 5% 2% 1% 0.1 0.01 Single Pulse 0.001 1E−06 0.00001 Psi Tab−A 0.0001 0.001 0.01 0.1 PULSE WIDTH (sec) Figure 21. Transient Thermal Resistance http://onsemi.com 7 1 10 100 1000 NCV8401, NCV8401A TEST CIRCUITS AND WAVEFORMS RL VIN + D RG VDD G DUT − S IDS Figure 22. Resistive Load Switching Test Circuit 90% 10% VIN tON tOFF 90% 10% IDS Figure 23. Resistive Load Switching Waveforms http://onsemi.com 8 NCV8401, NCV8401A TEST CIRCUITS AND WAVEFORMS L VDS VIN D RG + VDD G DUT − S tp IDS Figure 24. Inductive Load Switching Test Circuit 5V VIN 0V Tav Tp V(BR)DSS Ipk VDD VDS VDS(on) IDS 0 Figure 25. Inductive Load Switching Waveforms http://onsemi.com 9 NCV8401, NCV8401A PACKAGE DIMENSIONS DPAK CASE 369C ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 c b 0.005 (0.13) M H C L2 GAUGE PLANE C L L1 DETAIL A SEATING PLANE A1 ROTATED 905 CW 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. HDPlus is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 10 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NCV8401/D