NCV8408 Self-Protected Low Side Driver with Temperature and Current Limit 42 V, 10 A, Single N−Channel, DPAK http://onsemi.com NCV8408 is a single channel protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and integrated Drain-to-Gate clamping for overvoltage protection. Thermal protection includes a latch which can be reset by toggling the input. This device is suitable for harsh automotive environments. VDSS (Clamped) RDS(on) TYP ID MAX (Limited) 42 V 55 mW @ 5 V 10 A Drain (2,4) Features • • • • • • • • • • Short Circuit Protection Thermal Shutdown with Latched Reset Gate Input Current Flag During Latched Fault Condition Overvoltage Protection Integrated Clamp for Inductive Switching ESD Protection dV/dt Robustness Analog Drive Capability (Logic Level Input) NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant Typical Applications • Switch a Variety of Resistive, Inductive and Capacitive Loads • Can Replace Electromechanical Relays and Discrete Circuits • Automotive / Industrial Overvoltage Protection Gate Input (1) ESD Protection Temperature Limit Current Limit Current Sense Source (3) 4 1 2 MARKING DIAGRAM 3 Gate DPAK CASE 369C STYLE 2 Drain Source YWW V8408G Drain Y = Year WW = Work Week V8408 = Specific Device Code G = Pb−Free Package ORDERING INFORMATION Device Package Shipping† NCV8408DTRKG DPAK (Pb−Free) 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2012 December, 2012 − Rev. 0 1 Publication Order Number: NCV8408/D NCV8408 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Internally Clamped Drain−to−Gate Voltage Internally Clamped (RGS = 1.0 MW) Gate−to−Source Voltage Symbol Value Unit VDSS 42 Vdc VDGR 42 V VGS "14 Vdc Continuous Drain Current ID Total Power Dissipation @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) PD Thermal Resistance Junction−to−Ambient Steady State (Note 1) Junction−to−Ambient Steady State (Note 2) Junction−to−Tab Steady State (Note 3) Internally Limited 1.8 2.3 RqJA RqJA RqJT 70 55 2.1 Single Pulse Inductive Load Switching Energy (VDD = 20 Vdc, VGS = 5.0 V, IL = 8.0 A) EAS 140 Load Dump Voltage (VGS = 0 and 10 V, RI = 2.0 W, RL = 4.5 W, td = 400 ms) W °C/W mJ VLD 63 V Operating Junction Temperature TJ −40 to 150 °C Storage Temperature Tstg −55 to 150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted onto minimum pad FR4 PCB (1 oz Cu, 0.06” thick). 2. Surface−mounted onto 2″ square FR4 PCB, (1″ square, 1 oz Cu, 0.06” thick). 3. Surface−mounted onto minimum pad FR4 PCB (2 oz Cu, 0.06” thick). + ID DRAIN IG + VDS GATE SOURCE VGS − − Figure 1. Voltage and Current Convention http://onsemi.com 2 NCV8408 MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Test Conditions Symbol Min Typ Max Unit 42 40 43 46 45 47 51 51 51 − − 0.6 2.5 5.0 10 − 25 50 mA mA OFF CHARACTERISTICS V(BR)DSS Drain−to−Source Clamped Breakdown Voltage (Note 4) (VGS = 0 V, ID = 10 mA, TJ = 25°C) (VGS = 0 V, ID = 10 mA, TJ = 150°C) (Note 6) (VGS = 0 V, ID = 10 mA, TJ = −40°C) (Note 6) Zero Gate Voltage Drain Current (VGS = 0 V, VDS = 32 V, TJ = 25°C) (VGS = 0 V, VDS = 32 V, TJ = 150°C) (Note 6) IDSS V mA INPUT CHARACTERISTICS (Note 4) Gate Input Current − Normal Operation (VGS = 5.0 V) IGSSF Gate Input Current − Protection Latched (VGS = 5.0 V) (Note 6) IGSSL − 440 − Gate Threshold Voltage (VGS = VDS, ID = 1 mA) VGS(th) 1.0 1.7 2.2 V VGS(th)/TJ − 5.0 − −mV/°C Gate Threshold Temperature Coefficient Latched Reset Voltage (Note 6) VLR 0.8 1.4 1.9 V Latched Reset Time (VGS = 5.0 V to VGS < 1 V) (Note 6) tLR 10 40 100 ms − 25.5 − kW − − 55 100 60 120 − 0.95 − V td(ON) 10 20 ms tr 20 40 td(OFF) 30 60 40 Internal Gate Input Resistance ON CHARACTERISTICS (Note 4) RDS(on) Static Drain−to−Source On−Resistance (VGS = 5.0 V, ID = 3.0 A, TJ @ 25°C) (VGS = 5.0 V, ID = 3.0 A, TJ @ 150°C) (Note 6) Source−Drain Forward On Voltage (VGS = 0 V, IS = 7.0 A) VSD mW SWITCHING CHARACTERISTICS (Note 6) Turn−ON Delay Time Rise Time (10% ID to 90% ID) Turn−OFF Delay Time VGS = 5 V, VDS = 13 V RL = 4 W, −40°C < TJ < 150°C Fall Time (90% ID to 10% ID) tf 20 Slew−Rate ON (90% VD to 10% VD) −dVDS/dtON 0.5 Slew−Rate OFF (10% VD to 90% VD) dVDS/dtOFF 0.5 V/ms SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5) Current Limit VGS = 5.0 V, VDS = 10 V, TJ @ 25°C VGS = 5.0 V, VDS = 10 V, TJ = 150°C (Note 6) VGS = 5.0 V, VDS = 10 V, TJ = −40°C (Note 6) Temperature Limit (Turn−off) ILIM VGS = 5.0 V VGS = 10 V A 8 8 8 13 − − 16 18 16 TLIM(off) 150 150 175 165 200 185 °C ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Electro−Static Discharge Capability Human Body Model (HBM) ESD 4000 − − V Electro−Static Discharge Capability Machine Model (MM) ESD 400 − − V 4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%. 5. Fault conditions are viewed as beyond the normal operating range of the part. 6. Not subject to production testing. http://onsemi.com 3 NCV8408 TEST CIRCUITS AND WAVEFORMS RL 4W ID VIN + D 5V VDD G 0V − 13 V S Figure 2. Resistive Load Switching Test Circuit 90% VIN 10% td(ON) tr td(OFF) tf 90% ID 10% 10% VDS 90% Figure 3. Resistive Load Switching Waveforms http://onsemi.com 4 NCV8408 TEST CIRCUITS AND WAVEFORMS L VDS VIN D RG + VDD G DUT − S tp IDS Figure 4. Inductive Load Switching Test Circuit 5V VIN 0V Tav Tp V(BR)DSS Ipk VDD VDS VDS(on) IDS 0 Figure 5. Inductive Load Switching Waveforms http://onsemi.com 5 NCV8408 TYPICAL CHARACTERISTICS 20 18 16 18 150°C 125°C 10 −40°C ID (A) ILIM (A) 9V 8V 7V 6V 5V 4V 14 12 25°C 8 6 12 10 8 3V 6 4 4 2 2 0 0 10 V 16 14 5 6 7 8 10 9 VGS = 2.5 V 0 5 10 15 20 VGS (V) VDS (V) Figure 6. Current Limit vs. Gate Voltage Figure 7. Drain Current vs. Drain Voltage 120 160 140 100 80 100 150°C 80 100°C 60 25°C 40 60 td(off) 40 −40°C 2 3 tf 20 ID = 3 A ID = 8 A 20 0 TIME (ms) RDS(on) (mW) 120 4 5 6 7 8 9 0 10 td(on) 2 tr 3 4 5 6 7 8 VGS (V) VGS (V) Figure 8. RDS(on) vs. Gate Voltage Figure 9. Resistive Switching http://onsemi.com 6 9 10 NCV8408 PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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