Transistors SMD Type Product specification 2SC4497 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Small collector output capacitance. 0.55 Low saturation voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 High voltage. 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 300 V Collector-emitter voltage VCEO 300 V Emitter-base voltage VEBO 6 V IC 100 mA Collector current Base current IB 20 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cut-off current ICBO VCB = 300 V, IE = 0 0.1 ìA Emitter cut-off current IEBO VEB = 6 V, IC = 0 0.1 ìA Collector-base breakdown voltage V(BR)CBO IC = 0.1 mA, IE = 0 300 Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 300 DC current gain hFE VCE = 10 V, IC = 20 mA 30 VCE = 10 V, IC = 1mA 20 V V 150 Collector-emitter saturation voltage VCE (sat) IC = 20 mA, IB = 2 mA 0.5 V Base-emitter saturation voltage VBE (sat) IC = 20 mA, IB = 2 mA 1.2 V Transition frequency fT Collector output capacitance Cob VCE = 10 V, IC = 10 mA 70 VCB = 20 V, IE = 0, f = 1 MHz 3 MHz 4 pF hFE Classification Marking 3R 3O Rank R O hFE 30 90 50 150 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1