TYSEMI 2SC3265

Transistors
SMD Type
Product specification
2SC3265
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
High DC current gain: hFE (1) = 100320.
0.55
Features
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
Low saturation voltage: VCE (sat) = 0.4 V (max)
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
(IC = 500 mA, IB = 20 mA).
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
30
V
Collector-emitter voltage
VCEO
25
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
800
mA
Base current
IB
160
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
Tstg
-55 to +150
Storage temperature range
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cut-off current
Emitter cut-off current
Testconditons
ICBO
VCB = 30 V, IE = 0
IEBO
VEB = 50 V, IC = 0
Min
Typ
Max
Unit
0.1
ìA
0.1
ìA
Collector-emitter breakdown voltage
V(BR) CEO IC = 10 mA, IB = 0
25
V
Emitter-base breakdown voltage
V(BR) EBO IE = 0.1 mA, IC = 0
5
V
DC current gain
hFE
VCE = 1 V, IC = 100 mA
100
320
VCE (sat) IC = 500 mA, IB = 20 mA
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
V
0.8
V
VBE
VCE = 1 V, IC = 10 mA
fT
VCE = 5 V, IC = 10 mA
120
MHz
VCB = 10 V, IE = 0, f = 1 MHz
13
pF
Cob
0.5
0.4
hFE Classification
Marking
hFE
EO
100
200
http://www.twtysemi.com
EY
160 320
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4008-318-123
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