CEL UPD5702TU-E2-A

NEC's 2.4 GHz
Si LD MOS POWER AMPLIFIER UPD5702TU
INTERNAL BLOCK DIAGRAM
FEATURES
• MEDIUM OUTPUT POWER:
POUT = +21 dBm TYP @PIN = -2 dBm, f = 2.45 GHz
• ON CHIP OUTPUT POWER CONTROL FUNCTION
Pout2 1
8 Pin2
Pout2
2
7 Pin2
GND
3
6 GND
Pin1 4
5 Pout1
• SINGLE SUPPLY VOLTAGE:
VDS = 3.0 V TYP
• PACKAGED IN 8 PIN L2MM (2.0 X 2.2 X 0.5mm)
SUITABLE FOR HIGH- DENSITY SURFACE MOUNT
DESCRIPTION
NEC's UPD5702TU is a silicon LD MOS IC designed for use as
a power amplifier up to 2.4 GHz application. This IC consists of
two stage amplifiers. The device is packaged in a low cost,
surface mount 8 pin L2MM (Leadless Mini Mold) plastic package. Ideally suited for high density surface mount designs.
NEC's stringent quality assurance and test procedures ensure
the highest reliability and performance.
APPLICATIONS
• 1.9 GHZ Application Ex. PHS etc.
• 2.4 GHz application Ex. Bluetooth, Wireless LAN, etc.
• General purpose medium power AGC amplifier
ELECTRICAL CHARACTERISTICS (TA = 25°C, VDS = 3.0 V, f = 1.9 GHz, unless otherwise specified)
PART NUMBER
SYMBOLS
PARAMETERS AND CONDITIONS
IDS
Circuit Current, PIN = -5 dBm, POUT = +20.5 dBm
VGS
Gate Bias Voltage, PIN = -5 dBm, POUT = +20.5 dBm
POUT
Output Power, PIN = -5 dBm
PAE
Power Added Efficiency, PIN = -5 dBm, POUT = +20.5 dBm
UPD5702TU
UNITS
MIN
mA
2.0
20.5
%
27
Padj1
Adjacent Channel Power 1, PIN = -5 dBm, POUT = +20.5 dBm
dBc
-61
Padj2
Adjacent Channel Power 2, PIN = -5 dBm, POUT = +20.5 dBm
dBc
-76
Input Return Loss, PIN = -20 dBm
dB
10
10
IRL
MAX
150
V
dBm
TYP
ORL
Output Return Loss, PIN = -20 dBm
dB
ISOL
Isolation, PIN = -20 dBm
dB
45
OBW
Occupied Bandwidth, PIN = -5 dBm, POUT = +20.5 dBm
dB
TBD
California Eastern Laboratories
UPD5702TU
ABSOLUTE MAXIMUM RATINGS1
RECOMMENDED
OPERATING CONDITIONS
(TA = 25°C unless otherwise specified)
SYMBOLS
UNITS
RATINGS
VDS
Supply Voltage 1
PARAMETERS
V
6.0
VDS
Supply Voltage 1
V
2.7
3.0
3.6
VGS
Supply Voltage 2
V
6.0
VGS
Supply Voltage 2
V
0.0
0.2
–
PD
Power Dissipation2
W
0.866
PIN
Maximum Input Power
dBm
–
+5
–
TA
Operating Ambient Temp.
°C
-40 to +85
Drain Current
mA
–
165
–
TSTG
Storage Temp. Range
°C
-65 to +150
PIN(MAX)
Maximum Input Level
dBm
+10
Tj
Junction Temperature
°C
+150
Notes:
1. Operation in excess of any one of these conditions may
result in permanent damage.
2. TA = 25°C, mounted on 330 x 21 mm epoxy glass PWB.
SYMBOLS
ID
PARAMETERS
UNITS MIN TYP MAX
ORDERING INFORMATION
PART NUMBER
QUANTITY
UPD5702TU-E2-A
TBD
TYPICAL PERFORMANCE CURVES (TA = 25°C, f = 1.9 GHz, VGS = 2.0 V unless otherwise specified)
OUTPUT POWER, GAIN AND
ADJACENT CHANNEL POWER
vs. INPUT POWER
25
-30
-40
20
-50
15
10
-60
Pout
Gain
Padj (-900 KHz)
5
-70
Padj (-600 KHz)
Padj (+600 KHz)
Padj (+900 KHz)
-80
0
-15
-10
-5
0
Input Power, PIN (dBm)
5
10
Circuit Current, IDS (mA)
VDS = 3.0 V,
VGS = 2.0 V,
f = 1.90 GHz,
PIN = -5 dB
Adjacent Channel Power, Padj (dBc)
-20
30
Output Power, POUT (dBm), Gain, GA (dB)
CIRCUIT CURRENT
vs. INPUT POWER
250
200
150
100
50
0
-15
-10
-5
0
Input Power, PIN (dBm)
5
10
UPD5702TU
PACKAGE DIMENSIONS (Units in mm)
PACKAGE OUTLINE TU
Bottom View
Top View
2.2
2.0
0.4
1.4
0.4
0.1
0.16
0.25 0.25
0.75
0.75
Side View
0.5
2.0
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
02/04/2004
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
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that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
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go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Lead (Pb)
< 1000 PPM
Mercury
< 1000 PPM
Not Detected
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< 100 PPM
Not Detected
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< 1000 PPM
Not Detected
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< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
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