ONSEMI NTTFS4C05NTAG

NTTFS4C05N
Power MOSFET
30 V, 75 A, Single N−Channel, m8FL
Features
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• DC−DC Converters
• Power Load Switch
• Notebook Battery Management
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V(BR)DSS
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Value
Unit
VDSS
30
V
VGS
±20
V
ID
19.4
A
Continuous Drain
Current RqJA (Note 1)
TA = 25°C
Power Dissipation RqJA
(Note 1)
TA = 25°C
PD
2.16
W
Continuous Drain
Current RqJA ≤ 10 s
(Note 1)
TA = 25°C
ID
28
A
Power Dissipation
RqJA ≤ 10 s (Note 1)
TA = 25°C
Continuous Drain
Current RqJA (Note 2)
TA = 25°C
S (1,2,3)
MARKING DIAGRAM
21
PD
4.5
W
ID
12.0
TA = 85°C
A
8.9
Power Dissipation
RqJA (Note 2)
TA = 25°C
PD
0.82
W
Continuous Drain
Current RqJC (Note 1)
TC = 25°C
ID
75
A
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
33
W
TA = 25°C, tp = 10 ms
IDM
174
A
TJ,
Tstg
−55 to
+150
°C
Pulsed Drain Current
D (5−8)
G (4)
14.5
TA = 85°C
TC = 85°C
75 A
5.1 mW @ 4.5 V
N−Channel MOSFET
Symbol
TA = 85°C
ID MAX
3.6 mW @ 10 V
30 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Steady
State
RDS(on) MAX
56
1
S
S
S
G
1
WDFN8
(m8FL)
CASE 511AB
4C05
A
Y
WW
G
4C05
AYWWG
G
D
D
D
D
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
Operating Junction and Storage Temperature
ORDERING INFORMATION
Package
Shipping†
IS
30
A
Device
Drain to Source dV/dt
dV/dt
6.0
V/ns
NTTFS4C05NTAG
Single Pulse Drain−to−Source Avalanche Energy
(TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 41 Apk,
L = 0.1 mH, RG = 25 W) (Note 3)
EAS
84
mJ
WDFN8
(Pb−Free)
1500 / Tape &
Reel
NTTFS4C05NTWG
WDFN8
(Pb−Free)
5000 / Tape &
Reel
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum ratings. Parts are 100% tested at TJ = 25°C,
VGS = 10 V, IL = 29 A, EAS = 42 mJ.
© Semiconductor Components Industries, LLC, 2012
December, 2012 − Rev. 1
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTTFS4C05N/D
NTTFS4C05N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Junction−to−Case (Drain)
Parameter
RqJC
3.8
Junction−to−Ambient – Steady State (Note 4)
RqJA
57.8
Junction−to−Ambient – Steady State (Note 5)
RqJA
151.9
Junction−to−Ambient – (t ≤ 10 s) (Note 4)
RqJA
27.6
Unit
°C/W
4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
5. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
(transient)
V(BR)DSSt
VGS = 0 V, ID(aval) = 12.6 A,
Tcase = 25°C, ttransient = 100 ns
34
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
V
11.7
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.2
V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)/TJ
RDS(on)
1.3
5.0
mV/°C
VGS = 10 V
ID = 30 A
2.9
3.6
VGS = 4.5 V
ID = 30 A
4.1
5.1
mW
Forward Transconductance
gFS
VDS = 1.5 V, ID = 15 A
68
S
Gate Resistance
RG
TA = 25°C
1.0
W
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
1988
VGS = 0 V, f = 1 MHz, VDS = 15 V
1224
pF
71
Capacitance Ratio
CRSS/CISS
Total Gate Charge
QG(TOT)
14.5
Threshold Gate Charge
QG(TH)
2.9
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
5.5
Gate Plateau Voltage
VGP
3.1
V
31
nC
Total Gate Charge
VGS = 0 V, VDS = 15 V, f = 1 MHz
VGS = 4.5 V, VDS = 15 V; ID = 30 A
QG(TOT)
VGS = 10 V, VDS = 15 V; ID = 30 A
0.036
5.2
nC
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
11
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
30
20
8.0
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
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2
ns
NTTFS4C05N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
8.0
tr
td(OFF)
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
25
ns
26
5.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.77
TJ = 125°C
0.62
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 10 A
1.1
V
42.4
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
QRR
21.1
21.3
34.4
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
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3
ns
nC
NTTFS4C05N
0.028
0.026
0.024
0.022
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
3.0
TJ = 25°C
3.8 V
3.6 V
4 V to 6.5 V
ID, DRAIN CURRENT (A)
140
130 10 V
120
110
100
90
80
70
60
50
40
30
20
10
0
0
3.4 V
3.2 V
3.0 V
2.8 V
2.6 V
1
2
4
3
5
140
130 VDS = 5 V
120
110
100
90
80
70
60
50
40
30
20
10
0
0
0.5 1.0
2.0
2.5
3.0
3.5
4.0
Figure 2. Transfer Characteristics
ID = 30 A
TJ = 25°C
4.0
5.0
6.0
7.0
8.0
9.0
0.008
4.5
TJ = 25°C
0.007
0.006
0.005
VGS = 4.5 V
0.004
VGS = 10 V
0.003
0.002
10
10
20
30
40
50
60
70
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10000
1.7
VGS = 0 V
ID = 30 A
VGS = 10 V
TJ = 150°C
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
TJ = −55°C
1.5
Figure 1. On−Region Characteristics
Figure 3. On−Resistance vs. VGS
1.5
TJ = 25°C
VGS, GATE−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
1.6
TJ = 125°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
TYPICAL CHARACTERISTICS
1.4
1.3
1.2
1.1
1.0
1000
TJ = 125°C
100
TJ = 85°C
0.9
0.8
0.7
−50
−25
0
25
50
75
100
125
150
10
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
30
NTTFS4C05N
TYPICAL CHARACTERISTICS
VGS = 0 V
TJ = 25°C
2750
2500
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
3000
2250
Ciss
2000
1750
1500
1250
1000
Coss
750
500
250
0
Crss
0
5
10
15
20
25
30
QT
8
6
4
Qgd
Qgs
TJ = 25°C
VDD = 15 V
VGS = 10 V
ID = 30 A
2
0
0
4
8
12
16
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
IS, SOURCE CURRENT (A)
18
td(off)
td(on)
100
tr
tf
10
1
10
16
14
12
10
8
6
4
TJ = 125°C
TJ = 25°C
0.6
0.7
0.8
0.9
1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
10 ms
100 ms
1 ms
10
10 ms
0 V < VGS < 10 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
0.1
dc
1
10
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
ID, DRAIN CURRENT (A)
0.5
RG, GATE RESISTANCE (W)
1000
0.01
0.01
0
0.4
100
32
VGS = 0 V
2
0.1
28
Figure 7. Capacitance Variation
20
1
24
Qg, TOTAL GATE CHARGE (nC)
VDD = 15 V
ID = 15 A
VGS = 10 V
1
20
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
t, TIME (ns)
10
100
45
ID = 29 A
40
35
30
25
20
15
10
5
0
25
50
75
100
125
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
150
NTTFS4C05N
TYPICAL CHARACTERISTICS
100
Duty Cycle = 50%
R(t) (°C/W)
10
1
20%
10%
5%
2%
1%
0.1
0.01
Single Pulse
0.000001
0.00001
0.0001
0.001
0.1
0.01
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
100
120
ID, DRAIN CURRENT (A)
100
GFS (S)
80
60
40
20
0
0
10
20
30
40
50
60
70
TA = 25°C
1
1.E−07
80
TA = 85°C
10
1.E−06
1.E−05
1.E−04
ID (A)
PULSE WIDTH (SECONDS)
Figure 14. GFS vs. ID
Figure 15. Avalanche Characteristics
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6
1.E−03
NTTFS4C05N
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
0.20 C
D
A
D1
B
2X
0.20 C
8 7 6 5
4X
E1 E
q
c
1 2 3 4
A1
TOP VIEW
0.10 C
A
e
SIDE VIEW
0.10
8X b
C A B
0.05
C
4X
L
C
6X
0.10 C
DETAIL A
SEATING
PLANE
DETAIL A
8X
e/2
1
0.42
4
INCHES
NOM
0.030
−−−
0.012
0.008
0.130 BSC
0.116
0.120
0.078
0.083
0.130 BSC
0.116
0.120
0.058
0.063
0.009
0.012
0.026 BSC
0.012
0.016
0.026
0.032
0.012
0.017
0.002
0.005
0.055
0.059
0_
−−−
MIN
0.028
0.000
0.009
0.006
MAX
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.016
0.020
0.037
0.022
0.008
0.063
12 _
0.65
PITCH
PACKAGE
OUTLINE
4X
0.66
M
E3
8
G
MILLIMETERS
MIN
NOM
MAX
0.70
0.75
0.80
0.00
−−−
0.05
0.23
0.30
0.40
0.15
0.20
0.25
3.30 BSC
2.95
3.05
3.15
1.98
2.11
2.24
3.30 BSC
2.95
3.05
3.15
1.47
1.60
1.73
0.23
0.30
0.40
0.65 BSC
0.30
0.41
0.51
0.65
0.80
0.95
0.30
0.43
0.56
0.06
0.13
0.20
1.40
1.50
1.60
0_
−−−
12 _
SOLDERING FOOTPRINT*
K
E2
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
q
5
D2
BOTTOM VIEW
3.60
L1
0.75
2.30
0.57
0.47
2.37
3.46
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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NTTFS4C05N/D