ONSEMI NSM80100MT1G

NSM80100MT1G
PNP Transistor with Dual
Series Switching Diode
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
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• LCD Control Board
• High Speed Switching
• High Voltage Switching
PNP Transistor with Dual Series
Switching Diode
MAXIMUM RATINGS − PNP TRANSISTOR
Symbol
Value
Unit
Collector −Emitter Voltage
Rating
VCEO
−80
Vdc
Collector −Base Voltage
VCBO
−80
Vdc
Emitter −Base Voltage
VEBO
−4.0
Vdc
IC
−500
mAdc
Collector Current − Continuous
6
D2
1
MAXIMUM RATINGS − SWITCHING DIODE
Symbol
Value
Unit
Reverse Voltage
Rating
VR
100
V
Forward Current
IF
200
mA
Non−Repetitive Peak Forward Current
(Square Wave, TJ = 25°C prior to
surge)
t < 1 sec
t = 1 msec
IFSM
A
4
6 5
1 2
1.0
20
Operating and Storage Junction
Temperature Range
TJ, Tstg
−55 to +150
3
HBM
MM
Class
Value
3A
M4
4000 V ≤ Failure < 8000 V
Failure > 400 V
THERMAL CHARACTERISTICS
Rating
Total Device Dissipation FR−5 Board,
(Note 1) @ TA = 25°C
Derate above 25°C
Thermal Resistance from
Junction−to−Ambient (Note 1)
Total Device Dissipation FR−5 Board
(Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
Junction and Storage
Temperature Range
Symbol
PD
RqJA
PD
D1
Q1
2
3
SC−74
CASE 318F
MARKING DIAGRAM
3PN MG
G
ESD RATINGS
Electrostatic Discharge
4
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Rating
5
Max
Unit
400
mW
mW/°C
313
°C/W
270
mW
mW/°C
RqJA
463
°C/W
TJ, Tstg
−55 to +150
°C
3PN
M
G
= Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
NSM80100MT1G
SC−74
(Pb−Free)
3000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1. FR−5 = 650 mm2 pad, 2.0 oz Cu.
2. FR−5 = 10 mm2 pad, 2.0 oz Cu.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 3
1
Publication Order Number:
NSM80100M/D
NSM80100MT1G
Q1: PNP TRANSISTOR
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
−80
−
−4.0
−
−
−0.1
−
−0.1
120
−
−
−0.25
−
−1.2
150
−
Min
Max
75
−
−
−
−
1.0
30
100
−
1.5
−
−
−
−
715
855
1000
1250
−
4.0
−
1.75
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
Emitter −Base Breakdown Voltage
(IC = −1.0 mA, IB = 0)
(IE = −100 mA, IC = 0)
Collector Cutoff Current
(VCE = −60 V, IB = 0)
Collector Cutoff Current
(VCB = −80 V, IE = 0)
V(BR)CEO
V(BR)EBO
ICES
ICBO
V
V
mA
mA
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = −10 mA, VCE = −1.0 V)
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage
(IC = −100 mA, IB = −10 mA)
(IC = −100 mA, VCE = −1.0 V)
hFE
VCE(sat)
VBE(sat)
−
V
V
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (Note 4)
(IC = −100 mA, VCE = −2.0 V, f = 100 MHz)
fT
MHz
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
D1, D2: SWITCHING DIODE (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Unit
OFF CHARACTERISTICS
V(BR)
Reverse Breakdown Voltage
Reverse Voltage Leakage Current
Diode Capacitance
(VR = 75 V)
(VR = 20 V, TJ = 150°C)
(VR = 75 V, TJ = 150°C)
(VR = 0 V, f = 1.0 MHz)
Forward Voltage
Reverse Recovery Time
Forward Recovery Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 50 mA)
(IF = 150 mA)
(IF = IR = 10 mA, iR(REC) = 1.0 mA, RL = 100 W)
(IF = 10 mA, tr = 20 ns)
IR
CD
VF
trr
VFR
V
mA
pF
mV
ns
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NSM80100MT1G
200
100
VCE = -2.0 V
TJ = 25°C
TJ = 25°C
70
50
100
C, CAPACITANCE (pF)
f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
TYPICAL CHARACTERISTICS
70
50
Cibo
30
20
Cobo
10
30
7.0
20
-2.0 -3.0
-5.0 -7.0 -10
-20 -30 -50 -70 -100
IC, COLLECTOR CURRENT (mA)
5.0
-0.1 -0.2
-200
Figure 1. Current−Gain — Bandwidth Product
1.0 k
700
500
Figure 2. Capacitance
TJ = 125°C
VCE = -1.0 V
ts
h FE, DC CURRENT GAIN
t, TIME (ns)
-50 -100
400
300
200
100
70
50
tf
VCC = -40 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
30
20
10
-5.0 -7.0 -10
200
25°C
-55°C
100
80
60
tr
td @ VBE(off) = -0.5 V
-20 -30
-50 -70 -100
-200 -300
IC, COLLECTOR CURRENT (mA)
40
-0.5 -1.0 -2.0
-500
Figure 3. Switching Time
-500
1.1
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
150°C
25°C
−55°C
0.1
0.01
-50 -100 -200
-5.0 -10 -20
IC, COLLECTOR CURRENT (mA)
Figure 4. DC Current Gain
1
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
-0.5 -1.0 -2.0
-5.0 -10 -20
VR, REVERSE VOLTAGE (VOLTS)
0.001
0.01
0.1
0.9
0.8 −55°C
0.7
25°C
0.6
0.5
0.4
0.3
0.2
1
IC/IB = 10
1.0
150°C
0.0001
IC, COLLECTOR CURRENT (A)
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 5. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 6. Base Emitter Saturation Voltage vs.
Collector Current
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3
1
NSM80100MT1G
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.2
1.1
VCE = 1 V
1.0
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
150°C
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1
TJ = 25°C
-0.8
IC =
-100 mA
IC =
-50 mA
IC =
-250 mA
IC =
-500 mA
-0.6
-0.4
IC =
-10 mA
-0.2
0
-0.05 -0.1 -0.2
-0.5
-1.0
-2.0
-5.0
-10
-20
IB, BASE CURRENT (mA)
Figure 7. Base Emitter Voltage vs. Collector
Current
Figure 8. Collector Saturation Region
1
IC, COLLECTOR CURRENT (A)
-0.8
-1.2
-1.6
-2.0
-1.0
IC, COLLECTOR CURRENT (A)
RqVB for VBE
-2.4
-2.8
-0.5 -1.0 -2.0
-10
-20
-50
-100 -200
-500
100 mS
10 mS
0.1
Thermal Limit
0.01
0.1
1
Figure 9. Base−Emitter Temperature
Coefficient
Figure 10. Safe Operating Area
400
300
200
100
0
20
10
VCE, COLLECTOR EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (mA)
0
40
60
80
100
120
140
TEMPERATURE (°C)
Figure 11. Operating Temperature Derating
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4
-50
1 mS
1S
0.001
-5.0
PD, POWER DISSIPATION (mW)
R qVB , TEMPERATURE COEFFICIENT (mV/ °C)
VBE(on), BASE−EMITTER VOLTAGE (V)
TYPICAL CHARACTERISTICS
160
100
NSM80100MT1G
TYPICAL CHARACTERISTICS
100
100
IR, REVERSE CURRENT (mA)
IF, FORWARD CURRENT (mA)
1000
TA = 150°C
TA = 125°C
TA = 85°C
10
TA = 55°C
TA = 25°C
1
TA = −40°C
0.1
TA = −55°C
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
TA = 85°C
TA = 55°C
0.1
0.01
0.001
TA = 25°C
0
10
20
30
40
50
VF, FORWARD VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 12. Forward Voltage
Figure 13. Leakage Current
60
70
100
0.59
VR, DC REVERSE VOLTAGE (V)
Cd, DIODE CAPACITANCE (pF)
TA = 125°C
1.0
0.61
0.57
0.55
0.53
0.51
0.49
0.47
0.45
TA = 150°C
10
0
1
2
3
4
5
6
7
75
50
25
0
8
0
25
50
75
100
125
150
VR, REVERSE VOLTAGE (V)
TA, DERATED AMBIENT TEMPERATURE (°C)
Figure 14. Capacitance
Figure 15. Diode Power Dissipation Curve
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5
175
NSM80100MT1G
PACKAGE DIMENSIONS
SC−74
CASE 318F−05
ISSUE N
D
6
HE
1
5
4
2
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318F−01, −02, −03 OBSOLETE. NEW STANDARD 318F−04.
E
DIM
A
A1
b
c
D
E
e
L
HE
q
b
e
C
A
0.05 (0.002)
q
L
A1
MIN
0.90
0.01
0.25
0.10
2.90
1.30
0.85
0.20
2.50
0°
MILLIMETERS
NOM
MAX
1.00
1.10
0.06
0.10
0.37
0.50
0.18
0.26
3.00
3.10
1.50
1.70
0.95
1.05
0.40
0.60
2.75
3.00
10°
−
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
0°
INCHES
NOM
0.039
0.002
0.015
0.007
0.118
0.059
0.037
0.016
0.108
−
MAX
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
10°
SOLDERING FOOTPRINT*
2.4
0.094
0.95
0.037
1.9
0.074
0.95
0.037
0.7
0.028
1.0
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
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any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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NSM80100M/D