BC817-40W 45 V, 0.5 A, General Purpose NPN Transistor ON Semiconductor’s BC817−40W is a General Purpose NPN Transistor that is housed in the SC−70/SOT−323 package. Features www.onsemi.com • AEC-Q101 Qualified and Consult Factory for PPAP Capable • This Device is Pb−Free, Halogen Free/BFR Free and is RoHS COLLECTOR 3 Compliant 1 BASE MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Collector − Emitter Voltage VCEO 45 V Collector − Base Voltage VCBO 50 V Emitter − Base Voltage VEBO 5.0 V IC 500 mAdc Symbol Max Unit PD 460 mW RqJA 272 °C/W TJ, Tstg −55 to +150 °C Collector Current − Continuous 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation (Note 1) Thermal Resistance, Junction−to−Ambient (Note 1) Junction and Storage Temperature Range SC−70 CASE 419 STYLE 3 MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 Board, 1 oz. Cu, 100 mm2 CE MG G 1 CE M G = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION† Device Package Shipping BC817−40WT1G SC−70 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 June, 2015 − Rev. 1 1 Publication Order Number: BC817−40W/D BC817−40W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (IC = 10 mA) V(VR)CEO 45 − − V Collector −Emitter Breakdown Voltage (VEB = 0 V, IC = 10 mA) V(VR)CES 50 − − V Emitter −Base Breakdown Voltage (IE = 1.0 mA) V(VR)EBO 5.0 − − V Collector Cutoff Current (VCB = 20 V) (VCB = 20 V, TA = 150°C) ICBO − − − − 100 5.0 nA mA 250 40 − − 600 − Characteristic OFF CHARACTERISTICS ON CHARACTERISTICS DC Current Gain (Note 2) (IC = 100 mA, VCE = 1.0 V) (IC = 500 mA, VCE = 1.0 V) hFE − Collector −Emitter Saturation Voltage (Note 2) (IC = 500 mA, IB = 50 mA) VCE(sat) − − 0.7 V Base −Emitter On Voltage (Note 2) (IC = 500 mA, VCE = 1.0 V) VBE(on) − − 1.2 V fT 100 − − MHz Cobo − 10 − pF SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2% www.onsemi.com 2 BC817−40W TYPICAL CHARACTERISTICS 1 700 150°C VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 600 VCE = 1 V 500 25°C 400 300 −55°C 200 100 150°C 25°C 0.1 −55°C 0.01 0.001 0 0.001 0.01 0.001 1 0.1 0.1 1 IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain vs. Collector Current Figure 2. Collector Emitter Saturation Voltage vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) 1.0 0.01 IC, COLLECTOR CURRENT (A) 1.1 −55°C IC/IB = 10 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 1 1.2 VCE = 5 V 1.1 1.0 0.9 −55°C 0.8 25°C 0.7 0.6 0.5 150°C 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. Base Emitter Saturation Voltage vs. Collector Current Figure 4. Base Emitter Voltage vs. Collector Current 1000 fT, CURRENT−GAIN−BANDWIDTH PRODUCT (MHz) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) IC/IB = 10 VCE = 1 V TA = 25°C 100 10 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Figure 5. Current Gain Bandwidth Product vs. Collector Current www.onsemi.com 3 1 BC817−40W θV, TEMPERATURE COEFFICIENTS (mV/°C) 1.0 TJ = 25°C 0.8 0.6 0.4 IC = 10 mA 100 mA 300 mA 500 mA 0.2 0.1 1 IB, BASE CURRENT (mA) 10 qVC for VCE(sat) 0 -1 qVB for VBE -2 100 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 6. Saturation Region Figure 7. Temperature Coefficients 100 C, CAPACITANCE (pF) 0 0.01 +1 Cib 10 Cob 1 0.1 10 1 VR, REVERSE VOLTAGE (VOLTS) 100 Figure 8. Capacitances 1 1 ms 10 ms 100 ms 1s Thermal Limit 0.1 IC (A) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TYPICAL CHARACTERISTICS 0.01 Single Pulse Test @ TA = 25°C 0.001 0.01 0.1 1 VCE (Vdc) 10 Figure 9. Safe Operating Area www.onsemi.com 4 100 1000 BC817−40W PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. D e1 DIM A A1 A2 b c D E e e1 L HE 3 E HE 1 2 b e A 0.05 (0.002) 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.008 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.015 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR c A2 MIN 0.80 0.00 L A1 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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