Order this document by MCR310/D SEMICONDUCTOR TECHNICAL DATA Reverse Blocking Triode Thyristors . . . designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls; warning systems; capacitive discharge circuits and MPU interface. • Center Gate Geometry for Uniform Current Density • All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Low Trigger Currents, 200 µA Maximum for Direct Driving from Integrated Circuits SCRs 10 AMPERES RMS 50 thru 800 VOLTS G C A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Symbol Peak Repetitive Forward and Reverse Blocking Voltage(1) (TJ = –40 to 110°C) (1/2 Sine Wave, RGK = 1 kΩ) MCR310-2 MCR310-3 MCR310-4 MCR310-6 MCR310-8 MCR310-10 VDRM or VRRM On-State RMS Current (TC = 75°C) Value Unit Volts 50 100 200 400 600 800 K A G IT(RMS) 10 Amps ITSM 100 Amps I2t 40 A2s VGM ±5 Volts IGM 1 Amp PGM 5 Watts PG(AV) 0.75 Watt TJ –40 to +110 °C Tstg –40 to +150 °C – 8 in.-lb. Symbol Max Unit Thermal Resistance, Junction to Case RθJC 2.2 °C/W Thermal Resistance, Junction to Ambient RθJA 60 °C/W Peak Non-repetitive Surge Current (1/2 Cycle, 60 Hz, TJ = –40 to 110°C) Circuit Fusing (t = 8.3 ms) p 10 µs) Peak Gate Current (t p 10 µs) Peak Gate Power (t p 10 µs) Peak Gate Voltage (t Average Gate Power Operating Junction Temperature Range Storage Temperature Range Mounting Torque CASE 221A-04 (TO-220AB) STYLE 3 THERMAL CHARACTERISTICS Characteristic 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Motorola Thyristor Device Data Motorola, Inc. 1995 1 ELECTRICAL CHARACTERISTICS (TC = 25°C, RGK = 1 kΩ unless otherwise noted) Characteristic Symbol Min Typ Max Unit TC = 110°C TC = 25°C IDRM — — — — 500 10 µA µA TC = 110°C TC = 25°C IRRM — — — — 500 10 µA µA VTM — 1.7 2.2 Volts Gate Trigger Current, Continuous dc(2) (VD = 12 V, RL = 100 Ω) IGT — 30 200 µA Gate Trigger Voltage, Continuous dc (VD = 12 V, RL = 100 Ω) (VD = Rated VDRM, RL = 10 kΩ, TJ = 110°C) VGT — 0.1 0.5 — 1.5 — IH — — 6 mA dv/dt — 10 — V/µs tgt — 1 — µs Peak Forward Blocking Current(1) (TJ = 110°C, VD = Rated VDRM) Peak Reverse Blocking Current(1) (TJ = 110°C, VR = Rated VRRM) On-State Voltage (ITM = 20 A Peak, Pulse Width p 1 ms, Duty Cycle p 2%) Holding Current (VD = 12 V, ITM = 100 mA) Critical Rate of Rise of Forward Blocking Voltage (VD = Rated VDRM, TJ = 110°C, Exponential Waveform) Gate Controlled Turn-On Time (VD = Rated VDRM, ITM = 20 A, IG = 2 mA) Volts PAV , AVERAGE POWER DISSIPATION (WATTS) TC , MAXIMUM CASE TEMPERATURE (° C) 1. Ratings apply for negative gate voltage or RGK = 1 kΩ. Devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. 2. Does not include RGK current. 120 110 α α = CONDUCTION ANGLE 100 α = 30° 90 60° 90° 180° 80 dc 70 8 4 6 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 0 2 20 dc 16 α α = CONDUCTION ANGLE 12 180° 90° α = 30° 60° 8 4 0 0 10 Figure 1. Average Current Derating 2 4 6 8 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 10 Figure 2. On-State Power Dissipation VGT , GATE TRIGGER VOLTAGE (VOLTS) NORMALIZED GATE CURRENT 3 2 VD = 12 Vdc 1 0.5 0.3 –40 –20 0 20 40 60 80 90 100 TJ, JUNCTION TEMPERATURE (°C) Figure 3. Normalized Gate Current 2 120 140 0.7 VD = 12 Vdc 0.6 0.5 0.4 0.3 0.2 0.1 –60 –40 –20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) 120 Figure 4. Gate Voltage Motorola Thyristor Device Data PACKAGE DIMENSIONS –T– B F T SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. C S 4 Q A 1 2 3 STYLE 3: PIN 1. 2. 3. 4. U H K Z R L V J G D N CATHODE ANODE GATE ANODE DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.055 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.39 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 CASE 221A-04 (TO–220AB) Motorola Thyristor Device Data 3 Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 4 ◊ Motorola Thyristor Device Data *MCR310/D* MCR310/D