Order this document by MCR22-2/D SEMICONDUCTOR TECHNICAL DATA . . . designed and tested for repetitive peak operation required for CD ignition, fuel ignitors, flash circuits, motor controls and low-power switching applications. • • • • 150 Amperes for 2 µs Safe Area High dv/dt Very Low Forward “On” Voltage at High Current Low-Cost TO-226AA (TO-92) SCRs 1.5 AMPERES RMS 50 thru 600 VOLTS G A K K G CASE 29-04 (TO-226AA) STYLE 10 A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Symbol Peak Repetitive Forward and Reverse Blocking Voltage (RGK = IK, TJ = 25 to 125°C) Value VDRM, VRRM MCR22-2 MCR22-3 MCR22-4 MCR22-6 MCR22-8 On-State Current RMS (All Conduction Angles) Peak Non-repetitive Surge Current, TA = 25°C (1/2 Cycle, Sine Wave, 60 Hz) Circuit Fusing Considerations (t = 8.3 ms) Peak Gate Power, TA = 25°C Average Gate Power, TA = 25°C Unit Volts 50 100 200 400 600 IT(RMS) 1.5 Amps ITSM 15 Amps I2t 0.9 A2s PGM 0.5 Watt PG(AV) 0.1 Watt Peak Forward Gate Current, TA = 25°C (300 µs, 120 PPS) IFGM 0.2 Amp Peak Reverse Gate Voltage VRGM 5 Volts Operating Junction Temperature Range @ Rated VRRM and VDRM Storage Temperature Range Lead Solder Temperature (Lead Length 1/16I from case, 10 s Max) q TJ –40 to +125 °C Tstg –40 to +150 °C — +230 °C 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Motorola Thyristor Device Data Motorola, Inc. 1995 1 THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Case Characteristic RθJC 50 °C/W Thermal Resistance, Junction to Ambient RθJA 160 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted. RGK = 1000 Ohms.) Characteristic Symbol Peak Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM) Min Typ Max Unit — — — — 10 200 µA µA VTM — 1.2 1.7 Volts IDRM, IRRM TC = 25°C TC = 125°C Forward “On” Voltage (ITM = 1 A Peak) Gate Trigger Current (Continuous dc)(1) (Anode Voltage = 6 Vdc, RL = 100 Ohms) TC = 25°C TC = –40°C IGT — — 30 — 200 500 µA Gate Trigger Voltage (Continuous dc) (Anode Voltage = 7 Vdc, RL = 100 Ohms) (Anode Voltage = Rated VDRM, RL = 100 Ohms) TC = 25°C TC = –40°C TC = 125°C VGT — — 0.1 — — — 0.8 1.2 — Volts Holding Current (Anode Voltage = 12 Vdc) TC = 25°C TC = –40°C IH — — 2 — 5 10 mA dv/dt — 25 — V/µs VGD Forward Voltage Application Rate (TC = 125°C) 1. RGK Current Not Included in Measurement. FIGURE 1 — MAXIMUM CASE TEMPERATURE 140 100 dc α = 180° α = CONDUCTION ANGLE 60 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 2 1.8 2.0 TA , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE (° C) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C) CURRENT DERATING FIGURE 2 — MAXIMUM AMBIENT TEMPERATURE 140 120 100 80 60 40 dc α = 180° α = CONDUCTION ANGLE 20 0 0 0.2 0.4 0.6 0.8 1.0 IT(AV), AVERAGE ON-STATE CURRENT (AMP) Motorola Thyristor Device Data FIGURE 3 — TYPICAL FORWARD VOLTAGE 5.0 3.0 TJ = 125°C 2.0 25°C I T , INSTANTANEOUS ON-STATE CURRENT (AMP) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0 0.5 1.0 1.5 2.0 2.5 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) FIGURE 4 — THERMAL RESPONSE 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 2000 5000 10000 t, TIME (ms) Motorola Thyristor Device Data 3 TYPICAL CHARACTERISTICS FIGURE 6 — TYPICAL GATE TRIGGER CURRENT 100 0.8 VAK = 7.0 V RL = 100 0.7 I GT GATE TRIGGER CURRENT ( µA) VG , GATE TRIGGER VOLTAGE (VOLTS) FIGURE 5 — GATE TRIGGER VOLTAGE 0.6 0.5 0.4 0.3 –75 –50 –25 0 25 50 75 100 50 30 20 10 5.0 3.0 2.0 1.0 –40 125 –20 0 TJ, JUNCTION TEMPERATURE (°C) I H , HOLDING CURRENT (mA) 10 VAK = 12 V RL = 100 Ω 2.0 1.0 –40 –20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) 4 120 140 160 P(AV) MAXIMUM AVERAGE POWER DISSIPATION (WATTS) FIGURE 7 — HOLDING CURRENT 5.0 20 40 60 80 100 120 140 160 TJ JUNCTION TEMPERATURE (°C) FIGURE 8 — POWER DISSIPATION 2.0 1.8 1.6 30° 1.4 60° 90° 120° 180° 1.2 1.0 dc 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) Motorola Thyristor Device Data PACKAGE DIMENSIONS A B STYLE 10: PIN 1. CATHODE 2. GATE 3. ANODE R P L F SEATING PLANE K D X X G J H V C SECTION X–X 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. N N DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– CASE 29-04 (TO–226AA) Motorola Thyristor Device Data 5 Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 6 ◊ Motorola Thyristor Device Data *MCR22-2/D* MCR22–2/D