Order this document by MCR703A/D SEMICONDUCTOR TECHNICAL DATA Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. • • • • • *Motorola preferred devices Small Size Passivated Die Surface for Reliability and Uniformity Low Level Triggering and Holding Characteristics Recommend Electrical Replacement for C106 Available in Two Package Styles: Surface Mount Leadforms — Case 369A Miniature Plastic Package — Straight Leads — Case 369 SCRs 4.0 AMPERES RMS 100 thru 600 VOLTS G ORDERING INFORMATION • To Obtain “DPAK” in Surface Mount Leadform (Case 369A): Shipped in Sleeves — No Suffix, i.e., MCR706A Shipped in 16 mm Tape and Reel — Add “RL” Suffix to Device Number, i.e., MCR706ARL • To Obtain “DPAK” in Straight Lead Version: Shipped in Sleeves — Add ‘1’ Suffix to Device Number, i.e., MCR706A1 A K MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) A Characteristic Symbol Peak Repetitive Forward and Reverse Blocking Voltage (1) (1/2 Sine Wave) (RGK = 1000 Ohms, MCR703A1, MCR703A TC = –40 to +110°C) MCR704A1, MCR704A MCR706A1, MCR706A MCR708A1, MCR708A VDRM or VRRM Peak Non-repetitive Reverse Blocking Voltage (1/2 Sine Wave, RGK = 1000 Ohms, TC = –40 to +110°C) MCR703A1, MCR703A MCR704A1, MCR704A MCR706A1, MCR706A MCR708A1, MCR708A VRSM Average On-State Current IT(AV) 2.6 1.6 Amps ITSM 25 35 Amps I2t 2.6 A2s PGM 0.5 Watt Value Unit G (TC = –40 to +90°C) (TC = +100°C) Surge On-State Current (1/2 Sine Wave, 60 Hz, TC = +90°C) (1/2 Sine Wave, 1.5 ms TC = +90°C) Peak Gate Power (Pulse Width = 10 µs, TC = 90°C) CASE 369A STYLE 5 100 200 400 600 A Volts G 150 250 450 650 K CASE 369 STYLE 5 Watt 0.2 Amp Peak Reverse Gate Voltage VRGM 6 Volts TJ –40 to +110 °C Tstg –40 to +150 °C Storage Temperature Range 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Preferred devices are Motorola recommended choices for future use and best overall value. 0.118 3.0 0.1 IGM 0.190 4.826 0.063 1.6 PG(AV) Peak Forward Gate Current Operating Junction Temperature Range A 0.100 2.54 Average Gate Power (t = 8.3 ms, TC = 90°C) A K 0.165 4.191 Circuit Fusing (t = 8.3 ms) Volts 0.243 6.172 ǒinchesǓ mm Figure 1. Minimum Pad Sizes for Surface Mounting REV 1 Motorola Thyristor Device Data Motorola, Inc. 1995 1 THERMAL CHARACTERISTICS Symbol Min Max Unit Thermal Resistance, Junction to Case Characteristic RθJC — 8.33 °C/W Thermal Resistance, Junction to Ambient (Case 369A-04)(1) RθJA — 80 °C/W Thermal Resistance, Junction to Ambient (Case 369-03)(2) RθJA — 85 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C and RGK = 1000 ohms unless otherwise noted.) Characteristic Symbol Peak Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM) TC = 25°C TC = 110°C Min Typ Max — — — 10 200 — — 2.2 — — 25 — 75 300 Unit µA IDRM, IRRM Peak Forward “On” Voltage (ITM = 8.2 A Peak, Pulse Width = 1 to 2 ms, 2% Duty Cycle) Gate Trigger Current (Continuous dc)(3) (VAK = 12 Vdc, RL = 24 Ohms) (VAK = 12 Vdc, RL = 24 Ohms, TC = –40°C) VTM Volts Gate Trigger Voltage (Continuous dc) (Source Voltage = 12 V, RS = 50 Ohms) (VAK = 12 Vdc, RL = 24 Ohms, TC = –40°C) VGT — — 1 Volts Gate Non-Trigger Voltage (VAK = Rated VDRM, RL = 100 Ohms, TC = 110°C) VGD 0.2 — — Volts Holding Current (VAK = 12 Vdc, IGT = 2 mA) TC = 25°C (Initiating On-State Current = 200 mA) TC = –40°C IH — — — — 5 10 Total Turn-On Time (Source Voltage = 12 V, RS = 6 k Ohms) (ITM = 8.2 A, IGT = 2 mA, Rated VDRM) (Rise Time = 20 ns, Pulse Width = 10 µs) tgt — 2 — µs dv/dt — 10 — V/µs µA IGT Forward Voltage Application Rate (VD = Rated VDRM, Exponential Waveform, TC = 110°C) mA 110 110 TA , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( °C) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C) 1. Case 369A-04 when surface mounted on minimum pad sizes recommended. 2. Case 369-03 standing in free air. 3. RGK current not included in measurement. 106 102 0 98 α f = 60 Hz π 94 90 α = 30° 60° 90° 120° 180° dc 86 0 70 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 IT(AV), AVERAGE FORWARD CURRENT (AMP) Figure 2. Maximum Case Temperature 3.6 4 α π f = 60 Hz 50 α = 30° 30 82 2 90 0 0.1 60° 90° 180° 0.2 0.3 0.4 0.5 0.6 0.7 IT(AV), AVERAGE FORWARD CURRENT (AMP) dc 0.8 Figure 3. Maximum Ambient Temperature Motorola Thyristor Device Data PACKAGE DIMENSIONS C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 A 1 2 STYLE 5: PIN 1. 2. 3. 4. 3 S –T– K SEATING PLANE J F H D G GATE ANODE CATHODE ANODE DIM A B C D E F G H J K R S V INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.175 0.215 0.050 0.090 0.030 0.050 MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.46 1.27 2.28 0.77 1.27 3 PL 0.13 (0.005) M T CASE 369 Motorola Thyristor Device Data 3 –T– C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 3 U K F J L H D G 2 PL 0.13 (0.005) M T STYLE 5: PIN 1. 2. 3. 4. GATE ANODE CATHODE ANODE DIM A B C D E F G H J K L R S U V Z INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 ––– 0.030 0.050 0.138 ––– MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.45 5.46 0.51 1.27 0.51 ––– 0.77 1.27 3.51 ––– CASE 369A Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 4 ◊ Motorola Thyristor Device Data *MCR703A/D* MCR703A/D