BC846APN DUAL SURFACE MOUNT NPN/PNP TRANSISTORS (COMPLIMENTARY) This device contains two electrically-isolated complimently pair (NPN and PNP) general-purpose transisotrs.This device is ideal for portable applications where board space is at a premium VOLTAGE 65 Volts CURRENT 225 mWatts FEATURES • Electrically-Isolated Complimentary Transistor Pairs • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA Case: SOT-363, Plastic Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.006 gram Marking : 46N ABSOLUTE RATINGS-NPN PARAMETER SYMBOL VALUE UNITS Collector - Emitter Voltage VCEO 65 V Collector - Base Voltage VCBO 80 V Emitter - Base Voltage VEBO 6.0 V IC 100 mA SYMBOL VALUE UNITS Collector - Emitter Voltage VCEO -65 V Collector - Base Voltage VCBO -80 V Emitter - Base Voltage VEBO -5 V IC -100 mA Collector Current - Continuous ABSOLUTE RATINGS-PNP PARAMETER Collector Current - Continuous PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE REV.0.0-JUN.24.2009 PAGE . 1 BC846APN THERMAL CHARACTERISTICS PARAMETER SYMBOL VALUE UNITS Max Power Dissipation (Note 1) PTOT 225 mW Thermal Resistance , Junction to Ambient RJA 556 Junction Temperature TJ -55 to 150 O Storage Temperature TSTG -55 to 150 O O C/W C C Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm. NP N E L E C TRIC A L C HATA C TE RIS TIC S ( No te 2 ) T J =2 5 o C Unle s s o the rwi s e no te d PA RA ME TE R S YMB OL TE S T C OND ITION MIN. TYP. MA X . UNITS C o lle c to r - E mi tt e r B re a k d o wn Vo lta g e V ( B R) C E O IC = 1 0 mA , IB =0 65 - - V C o lle c to r - B a s e B re a k d o wn Vo lta g e V ( B R) C B O IC = 1 0 uA , IE =0 80 - - V E mi tte r - B a s e B r e a k d o wn Vo lta g e V (B R) E B O IE = 1 0 uA , IC =0 6 .0 - - V E mi tte r- B a s e C uto ff C ur r e nt IE B O V EB =5V - - 100 nA C o lle c to r - B a s e C uto ff C ur r e nt IC B O V C B = 3 0 V, IE = 0 V C B = 3 0 V, IE = 0 ,TJ =1 5 0 O C - - 15 5 .0 nA uA hF E IC = 1 0 uA , V C E =5 V - 90 - - hF E IC = 2 .0 mA , V C E = 5 V 11 0 180 220 - D C C urr e nt Ga i n D C C urr e nt Ga i n C o lle c to r - E mi tt e r S a tura ti o n Vo lta g e V C E ( S AT) IC = 1 0 mA , IB =0 .5 mA IC = 1 0 0 mA , IB =5 .0 mA - - 0 .2 5 0 .6 V B a s e - E mi tte r S a tur a ti o n Vo lta g e V C E ( S AT) IC = 1 0 mA , IB =0 .5 mA IC = 1 0 0 mA , IB =5 .0 mA - 0 .7 0 .9 - V B a s e - E mi tte r Vo lta g e V C E ( S AT) IC = 2 mA , V C E = 5 .0 V IC = 1 0 mA , V C E =5 .0 V 0 .5 8 - 0 .6 6 0 - 0 .7 0 0 .7 7 V - - 4 .5 pF C o lle c to r - B a s e C a p a c i ta nc e REV.0.0-JUN.24.2009 C CBO V C B = 1 0 V, IE = 0 , f=1 MH PAGE . 2 BC846APN P NP E L E C TRIC A L C HATA C TE RIS TIC S ( No te 2 ) T J =2 5 o C Unle s s o the r wi s e no te d PA RA ME TE R S YMB OL TE S T C OND ITION MIN. TYP. MA X . UNITS C o lle c to r - E mi tt e r B re a k d o wn Vo lta g e V ( B R) C E O IC = -1 0 mA , IB = 0 -65 - - V C o lle c to r - B a s e B re a k d o wn Vo lta g e V ( B R) C B O IC = -1 0 uA , IE =0 -80 - - V E mi tte r - B a s e B r e a k d o wn Vo lta g e V ( B R) E B O IE = -1 uA , IC = 0 - 5 .0 - - V E mi tte r- B a s e C uto ff C urr e nt IE B O V E B = -5 V - - -10 0 nA C o lle c to r - B a s e C uto ff C ur r e nt IC B O V C B = -3 0 V, IE = 0 V C B = -3 0 V, IE = 0 ,T J =1 5 0 O C - - -15 -4 .0 nA uA hF E IC = -1 0 uA , V C E =- 5 V - 90 - - hF E IC = -2 .0 mA , V C E =- 5 V 11 0 180 220 - D C C urr e nt Ga i n D C C urr e nt Ga i n C o lle c to r - E mi tt e r S a t ura ti o n Vo lta g e V C E ( S AT) IC = -1 0 mA , IB = -0 .5 mA IC = -1 0 0 mA , IB =- 5 .0 mA - - -0.30 -0.65 V B a s e - E mi tte r S a tur a ti o n Vo lta g e V C E ( S AT) IC = -1 0 mA , IB = -0 .5 mA IC = -1 0 0 mA , IB =- 5 .0 mA - -0.7 -0.9 - V B a s e - E mi tte r Vo lta g e V C E ( S AT) IC = -2 mA , V C E =- 5 .0 V IC = -1 0 mA , V C E = - 5 .0 V -0.60 - - -0.75 -0.82 V - - 4 .5 pF C o lle c to r - B a s e C a p a c i ta nc e REV.0.0-JUN.24.2009 C CBO V C B = -1 0 V, IE = 0 , f=1 MH PAGE . 3 BC846APN NPN ELECTRICAL CHARACTERISTICS CURVE 300 10 T J =150 oC o T J =100 oC hF E 200 o 150 T J =25 C 100 V CE =5V 50 0 0.01 T J =25 C Capacitance, C (pF) 250 C IB (EB) C OB (CB) 1 0.1 1 10 100 Collector Current, I C (mA) 0.1 1000 Fig.1- TYPICAL h FE vs. Collector Current 10 1 100 Reverse Voltage(V) Fig.2- TYPICAL CAPACITANCES vs. REVERSE VOLTAGE PNP ELECTRICAL CHARACTERISTICS CURVE 600 14 T J=150 OC o Capacitance,C(pF) hFE 400 T J =25 C 12 500 O T J=100 C 300 T J=25 OC 200 V CE=-5V 100 0 0.01 0.1 1 8 6 C OB (CB) 4 2 10 Collector Current,I C(mA) Fig.1- TYPICAL h FE vs. Collector Current REV.0.0-JUN.24.2009 C IB (EB) 10 100 0 0.1 1 10 100 Reverse Voltage,V R(V) Fig.2- TYPICAL CAPACITANCES vs. REVERSE VOLTAGE PAGE . 4 BC846APN MOUNTING PAD LAYOUT ORDER INFORMATION • Packing information T/R - 10K per 13" plastic Reel T/R - 3K per 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2009 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. REV.0.0-JUN.24.2009 PAGE . 5