BC846AW ~ BC850CW NPN GENERAL PURPOSE TRANSISTORS CURRENT 30/45/65 Volts VOLTAGE 150 mWatts • General purpose amplifier applications • NPN epitaxial silicon, planar design 0.087(2.20) 0.070(1.80) • Collector current IC = 100mA • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA 0.087(2.20) 0.078(2.00) 0.004(0.10)MIN. FEATURES 0.054(1.35) 0.045(1.15) • Case: SOT-323, Plastic 0.006(0.15) 0.002(0.05) 0.056(1.40) 0.047(1.20) • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 0.0001 ounce, 0.005 gram 0.044(1.10) 0.035(0.90) 0.004(0.10)MAX. 0.016(0.40) 0.008(0.20) Device Marking: BC846AW=46A BC847AW=47A BC848AW=48A BC846BW=46B BC847BW=47B BC848BW=48B BC847CW=47C BC848CW=48C BC849BW=49B BC850BW=50B BC849CW=49C BC850CW=50C ABSOLUTE RATINGS PARAMETER Symbol Value Units Collector - Emitter Voltage BC846W BC847W, BC850W BC848W, BC849W VCEO 65 45 30 V Collector - Base Voltage BC846W BC847W, BC850W BC848W, BC849W VCBO 80 50 30 V Emitter - Base Voltage BC846W BC847W, BC850W BC848W, BC849W VEBO 6.0 6.0 5.0 V IC 100 mA Collector Current - Continuous THERMAL CHARACTERISTICS PARAMETER Symbol Value Units Max Power Dissipation (Note 1) PTOT 150 mW Thermal Resistance RθJA RθJC 400 100 Junction Temperature TJ -55 to 150 O Storage Temperature TSTG -55 to 150 O O C/W C C Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. December 17,2010-REV.00 PAGE . 1 BC846AW ~ BC850CW ELECTRICAL CHARACTERISTICS PA RA ME TE R S ym bo l Te st C o nd i ti o n MIN. TYP. MA X . Uni ts C o lle c to r - E mi tte r B re a k d o wn Vo lta g e B C 8 4 6 AW,B W B C 8 4 7 AW/B W /C W,B C 8 5 0 B W/C W B C 8 4 8 AW/B W /C W,B C 8 4 9 B W/C W V (B R) C E O IC =1 0 mA , IB =0 65 45 30 - - V C o lle c to r - B as e B re a k d o wn Vo lta g e B C 8 4 6 AW,B W B C 8 4 7 AW/B W /C W,B C 8 5 0 B W/C W B C 8 4 8 AW/B W /C W,B C 8 4 9 B W/C W V (B R) C B O IC =1 0 μA , IE =0 80 50 30 - - V E mi tte r - B a s e B re a k d o wn Vo lta g e B C 8 4 6 AW,B W B C 8 4 7 AW/B W /C W,B C 8 5 0 B W/C W B C 8 4 8 AW/B W /C W,B C 8 4 9 B W/C W V ( B R) E B O IE =1 0 μA , IC =0 6.0 6.0 5.0 - - V E mi tte r-B a s e C uto ff C urre nt IE B O V E B =5 - - 100 nA C o lle c to r-B a s e C uto ff C urre nt IC B O V C B =3 0V, IE =0 V C B =3 0V, IE =0 ,T J =1 5 0 O C - - 15 5 .0 nA μA B C 8 4 6 ~B C 8 4 8 S uffi x " AW" B C 8 4 6 ~B C 8 5 0 S uffi x " B W" B C 8 4 7 ~B C 8 5 0 S uffi x " C W" hFE IC =1 0 μA , V C E =5 V - 90 150 270 - - B C 8 4 6 ~B C 8 4 8 S uffi x " AW" B C 8 4 6 ~B C 8 5 0 S uffi x " B W" B C 8 4 7 ~B C 8 5 0 S uffi x " C W" hFE IC =2 .0 mA , V C E =5 V 11 0 200 420 180 290 520 220 450 800 - D C C urre nt Ga i n D C C urre nt Ga i n C o lle c to r - E mi tte r S a tura ti o n Vo lta g e V C E (S AT) IC =1 0 mA , IB =0 .5 mA IC =1 0 0 mA , IB =5 .0 mA - - 0 .2 5 0 .6 V B a se - E mi tte r S a tura ti o n Vo lta g e V C E (S AT) IC =1 0 mA , IB =0 .5 mA IC =1 0 0 mA , IB =5 .0 mA - 0 .7 0 .9 - V B a se - E mi tte r Vo lta g e V C E (S AT) IC =2 mA , V C E =5 .0 V IC =1 0 mA , V C E =5 .0 V 0 .5 8 - 0 .6 6 0 - 0 .7 0 0 .7 7 V - - 4 .5 pF C o lle c to r - B as e C a p a ci ta nce December 17,2010-REV.00 C CBO V C B =1 0V, IE =0 , f=1 MH PAGE . 2 BC846AW ~ BC850CW ELECTRICAL CHARACTERISTICS CURVE (BC846AW,BC847AW,BC848AW) 300 TJ =150˚ C VCB=30V 250 TJ=100˚ C 200 10 hFE ICB0, Collector Current (nA) 100 TJ=25 C 150 100 1 VCE=5V 50 0 0.01 0 25 50 75 100 125 150 0.1 1 10 100 1000 Collector Current, IC (mA) Junction Temperature, TJ (OC) Fig. 1. Typical ICB0 vs. Junction Temperature Fig. 2. Typical hFE vs. Collector Current 1200 1000 1000 TJ = 25 ˚C TJ = 100 ˚C TJ = 100 ˚C VCE(sat), (mV) VBE(ON), (mV) 800 600 TJ = 150 ˚C 100 TJ = 25 ˚C 400 VCE=5V IC/IB=20 TJ = 150 ˚C 200 0 0.01 0.1 1 10 100 10 0.01 1000 0.1 1 10 100 1000 Collector Current, IC (mA) Collector Current, IC (mA) Fig. 3. Typical VBE(ON) vs. Collector Current Fig. 4. Typical VCE(SAT) vs. Collector Current 10 1200 TJ = 25 ˚C 1000 Cib (EB) VBE(sat), (mV) 800 Capacitance, C (pF ) TJ = 25 ˚C TJ = 100 ˚C 600 400 200 IC/IB=20 TJ = 150 ˚C 0 0.01 Cob (CB) 1 0.1 1 10 100 0.1 1 10 100 Collector Current, IC (mA) Reverse Voltage (V) Fig. 5. Typical VBE(SAT) vs. Collector Current Fig. 6. Typical Capacitances vs. Reverse Voltage December 17,2010-REV.00 PAGE . 3 BC846AW ~ BC850CW ELECTRICAL CHARACTERISTICS CURVE (BC846BW,BAC847BW,BC848BW,BC849BW,BC850BW) 500 VCE=5V TJ =150˚ C 450 VCB=30V 400 350 10 TJ=100˚ C 300 hFE ICB0, Collector Current (nA) 100 TJ =25 ˚C 250 200 1 150 100 50 0 25 50 75 100 125 0 0.01 150 0.1 1 10 100 1000 Collector Current, IC (mA) Junction Temperature, TJ (OC) Fig. 1. Typical ICB0 vs. Junction Temperature Fig. 2. Typical hFE vs. Collector Current 1000 1200 1000 TJ = 25 ˚C TJ = 100 ˚C VCE(sat), (mV) VBE(ON), (mV) 800 600 TJ = 100 ˚C TJ = 150 ˚C 100 400 TJ = 25 ˚C 200 0 0.01 0.1 IC/IB=20 VCE=5V TJ = 150 ˚C 1 10 100 10 0.01 1000 0.1 1 100 1000 Collector Current, IC (mA) Fig. 3. Typical VBE(ON) vs. Collector Current Fig. 4. Typical VCE(SAT) vs. Collector Current 1200 10 1000 Cib (EB) 800 TJ = 100 ˚C 600 400 200 Cob (CB) IC/IB=20 TJ = 150 ˚C 0 0.01 TJ = 25 ˚C Capacitance, C (pF ) TJ = 25 ˚C VBE(sat), (mV) 10 Collector Current, IC (mA) 1 0.1 1 10 100 0.1 Collector Current, IC (mA) Fig. 5. Typical VBE(SAT) vs. Collector Current December 17,2010-REV.00 1 10 100 Reverse Voltage (V) Fig. 6. Typical Capacitances vs. Reverse Voltage PAGE . 4 BC846AW ~ BC850CW ELECTRICAL CHARACTERISTICS CURVE (BAC847CW,BC848CW,BC849CW,BC850CW) 1200 100 TJ =150˚ C 1000 10 hFE ICB0, Collector Current (nA) VCE=5V VCB=30V 800 TJ =100˚ C 600 TJ =25 C 400 1 200 0 0.01 0 25 50 75 100 125 150 0.1 1 10 100 1000 Collector Current, IC, (mA) Junction Temperature, TJ (OC) Fig. 1. Typical ICB0 vs. Junction Temperature Fig. 2. Typical hFE vs. Collector Current 1000 1200 1000 TJ = 25 ˚C TJ = 100 ˚C VCE(sat), (mV) VBE(ON), (mV) 800 600 TJ = 100 ˚C TJ = 150 ˚C 100 400 TJ = 25 ˚C 200 VCE=5V TJ = 150 ˚C 0 0.01 0.1 1 10 100 IC/IB=20 10 0.01 1000 0.1 1 10 100 1000 Collector Current, IC (mA) Collector Current, IC (mA) Fig. 3. Typical VBE(ON) vs. Collector Current Fig. 4. Typical VCE(SAT) vs. Collector Current 1200 10 1000 TJ = 25 ˚C Cib (EB) VBE(sat), (mV) 800 Capacitance, C (pF ) TJ = 25 ˚C TJ = 100 ˚C 600 400 Cob (CB) IC/IB=20 200 TJ = 150 ˚C 0 0.01 1 0.1 1 10 100 0.1 Collector Current, IC (mA) Fig. 5. Typical VBE(SAT) vs. Collector Current December 17,2010-REV.00 1 10 100 Reverse Voltage (V) Fig. 6. Typical Capacitances vs. Reverse Voltage PAGE . 5 BC846AW ~ BC850CW MOUNTING PAD LAYOUT SOT-323 ORDER INFORMATION • Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7” plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2010 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. December 17,2010-REV.00 PAGE . 6