MBRAF1100T3G Schottky Power Rectifier Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. These state−of−the−art devices have the following features: Features • • • • • • Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction High Blocking Voltage − 100 V 150°C Operating Junction Temperature Guardring for Stress Protection This is a Pb−Free Device http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE 100 VOLTS SMA−FL CASE 403AA PLASTIC STYLE 6 Mechanical Characteristics • Case: Epoxy, Molded • Weight: 95 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped in 12 mm Tape and Reel, 5000 Units per Reel Cathode Polarity Band MARKING DIAGRAM AYWW RADG RAD A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb−Free Package MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR Average Rectified Forward Current TL = 130°C IF(AV) Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 50 TJ −65 to +150 °C dv/dt 10 V/ns Operating Junction Temperature (Note 1) Voltage Rate of Change V ORDERING INFORMATION 100 A 1.0 See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. © Semiconductor Components Industries, LLC, 2012 July, 2012 − Rev. 0 1 Publication Order Number: MBRAF1100T3/D MBRAF1100T3G THERMAL CHARACTERISTICS Characteristic Symbol Value Unit RqJL RqJA 25 90 °C/W Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 4) (iF = 1.0 A, TJ = 25°C) VF 0.75 Maximum Instantaneous Reverse Current (Note 4) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 100°C) IR Thermal Resistance, Junction−to−Lead (Note 2) Thermal Resistance, Junction−to−Ambient (Note 2) 2. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board. ELECTRICAL CHARACTERISTICS Rating V mA 0.5 5.0 3. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board. 4. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. ORDERING INFORMATION Device MBRAF1100T3G Marking Package Shipping† RAD SMA−FL (Pb−Free) 5000 / Tape & Reel TYPICAL ELECTRICAL CHARACTERISTICS 1K 400 200 100 40 20 10 4 2 1 0.4 0.2 0.1 0.04 0.02 0.01 20 10 2 100°C 1 0.5 25°C 0.2 0.1 0.05 0.02 0 TJ = 150°C I R , REVERSE CURRENT ( μA) TJ = 150°C 5 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 vF, INSTANTANEOUS VOLTAGE (VOLTS) 125°C 100°C 25°C 0 10 Figure 1. Typical Forward Voltage 20 30 40 50 60 70 VR, REVERSE VOLTAGE (VOLTS) 80 90 100 Figure 2. Typical Reverse Current* *The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these curves if VR is sufficient below rated VR. C, CAPACITANCE (pF) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 280 260 240 220 200 180 160 140 120 100 80 60 40 20 0 NOTE: TYPICAL CAPACITANCE NOTE: AT 0 V = 270 pF 0.1 0.2 0.5 1 2 5 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Capacitance http://onsemi.com 2 50 100 R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) MBRAF1100T3G 100 10 1 50% Duty Cycle 10% 20% 5% 2% 1% 0.1 0.01 Single Pulse 0.001 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t, PULSE TIME (S) Figure 4. Typical Transient Thermal Response, Junction−to−Ambient http://onsemi.com 3 100 1000 MBRAF1100T3G PACKAGE DIMENSIONS SMA−FL CASE 403AA−01 ISSUE O E E1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. D DIM A b c D E E1 L TOP VIEW A c RECOMMENDED SOLDER FOOTPRINT* C SIDE VIEW SEATING PLANE 1.76 2X MILLIMETERS MIN MAX 0.90 1.10 1.25 1.65 0.15 0.30 2.40 2.80 4.80 5.40 4.00 4.60 0.70 1.10 5.56 b 1.30 2X L BOTTOM VIEW DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 4 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MBRAF1100T3/D