ONSEMI MBRS190T3G

MBRS1100T3, MBRS190T3
Preferred Devices
Schottky Power Rectifier
Surface Mount Power Package
Schottky Power Rectifiers employ the use of the Schottky Barrier
principle in a large area metal-to-silicon power diode. State-of-the-art
geometry features epitaxial construction with oxide passivation and
metal overlay contact. Ideally suited for low voltage, high frequency
rectification, or as free wheeling and polarity protection diodes, in
surface mount applications where compact size and weight are critical
to the system. These state-of-the-art devices have the following
features:
Features
•
•
•
•
•
•
•
Pb−Free Packages are Available
Small Compact Surface Mountable Package with J-Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
High Blocking Voltage − 100 Volts
175°C Operating Junction Temperature
Guardring for Stress Protection
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SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERE
90, 100 VOLTS
SMB
CASE 403A
PLASTIC
MARKING DIAGRAM
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
•
•
•
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Shipped in 12 mm Tape and Reel, 2500 units per reel
Cathode Polarity Band
AYW
B1xG
B1
x
A
Y
W
G
= Device Code
= C for MBRS1100T3
9 for MBRS190T3
= Assembly Location
= Year
= Work Week
= Pb−Free Package
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage MBRS190T3
MBRS1100T3
VRRM
VRWM
VR
Average Rectified Forward Current
TL = 163°C
TL = 148°C
IF(AV)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
IFSM
50
TJ
−65 to +175
°C
dv/dt
10
V/ns
Operating Junction Temperature (Note 1)
Voltage Rate of Change
V
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
90
100
A
Preferred devices are recommended choices for future use
and best overall value.
1.0
2.0
A
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 9
1
Publication Order Number:
MBRS1100T3/D
MBRS1100T3, MBRS190T3
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
RqJL
22
°C/W
Maximum Instantaneous Forward Voltage (Note 1) (iF = 1.0 A, TJ = 25°C)
VF
0.75
V
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 100°C)
IR
Thermal Resistance − Junction−to−Lead (TL = 25°C)
ELECTRICAL CHARACTERISTICS
mA
0.5
5.0
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
ORDERING INFORMATION
Marking
Package
Shipping †
MBRS1100T3
B1C
SMB
2500 Tape & Reel
MBRS1100T3G
B1C
SMB
(Pb−Free)
2500 Tape & Reel
MBRS190T3
B19
SMB
2500 Tape & Reel
MBRS190T3G
B19
SMB
(Pb−Free)
2500 Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
MBRS1100T3, MBRS190T3
1K
400
200
100
40
20
10
4
2
1
0.4
0.2
0.1
0.04
0.02
0.01
20
10
TJ = 150°C
5
2
100°C
1
0.5
25°C
0.2
0.1
0.05
0.02
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
TJ = 150°C
I R , REVERSE CURRENT (μA)
i F, INSTANTANEOUS FORWARD CURRENT (AMPS)
TYPICAL ELECTRICAL CHARACTERISTICS
1
1.1 1.2 1.3
125°C
100°C
25°C
0
10
20
vF, INSTANTANEOUS VOLTAGE (VOLTS)
30
40
50
60
70
80
90
100
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current*
3.2
2.0
2.8
TJ = 100°C
2.4
SQUARE
WAVE
1.0
DC
1.2
0.8
SQUARE
WAVE
0.5
0.4
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
145
150
155
160
165
170
175
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
TC, CASE TEMPERATURE (°C)
Figure 3. Power Dissipation
Figure 4. Current Derating, Case, Per Leg
TYPICAL ELECTRICAL CHARACTERISTICS
C, CAPACITANCE (pF)
0
DC
1.5
2.0
1.6
I F(AV), AVERAGE FORWARD CURRENT (AMPS)
PF(AV), AVERAGE POWER DISSIPATION (WATTS)
*The curves shown are typical for the highest voltage device in the voltage
grouping. Typical reverse current for lower voltage selections can be estimated
from these curves if VR is sufficient below rated VR.
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
NOTE: TYPICAL CAPACITANCE
NOTE: AT 0 V = 270 pF
0.1
0.2
0.5
1
2
5
10
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Typical Capacitance
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3
50
100
180
MBRS1100T3, MBRS190T3
PACKAGE DIMENSIONS
SMB
PLASTIC PACKAGE
CASE 403A−03
ISSUE F
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.
E
b
DIM
A
A1
b
c
D
E
HE
L
L1
D
MIN
1.90
0.05
1.96
0.15
3.30
4.06
5.21
0.76
MILLIMETERS
NOM
MAX
2.13
2.45
0.10
0.20
2.03
2.20
0.23
0.31
3.56
3.95
4.32
4.60
5.44
5.60
1.02
1.60
0.51 REF
MIN
0.075
0.002
0.077
0.006
0.130
0.160
0.205
0.030
INCHES
NOM
0.084
0.004
0.080
0.009
0.140
0.170
0.214
0.040
0.020 REF
MAX
0.096
0.008
0.087
0.012
0.156
0.181
0.220
0.063
A
L
L1
A1
c
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
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4
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MBRS1100T3/D