ONSEMI NGTB25N120FLWG

NGTB25N120FLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss. The IGBT is well suited for UPS
and solar applications. Incorporated into the device is a soft and fast
co−packaged free wheeling diode with a low forward voltage.
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Features
•
•
•
•
•
•
25 A, 1200 V
VCEsat = 2.0 V
Eoff = 0.95 mJ
Low Saturation Voltage using Trench with Field Stop Technology
Low Switching Loss Reduces System Power Dissipation
10 ms Short Circuit Capability
Low Gate Charge
Soft, Fast Free Wheeling Diode
These are Pb−Free Devices
C
Typical Applications
• Solar Inverter
• UPS Inverter
G
E
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
VCES
1200
V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
Pulsed collector current, Tpulse
limited by TJmax
ICM
Diode forward current
@ TC = 25°C
@ TC = 100°C
IF
Diode pulsed current, Tpulse limited
by TJmax
IFM
200
A
Gate−emitter voltage
VGE
$20
V
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
Short Circuit Withstand Time
VGE = 15 V, VCE = 500 V, TJ ≤ 150°C
A
50
25
200
A
C
TO−247
CASE 340L
STYLE 4
E
A
50
25
MARKING DIAGRAM
W
192
77
TSC
10
ms
TJ
−55 to +150
°C
Storage temperature range
Tstg
−55 to +150
°C
Lead temperature for soldering, 1/8”
from case for 5 seconds(note 3)
TSLD
260
°C
Operating junction temperature
range
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
25N120FL
AYWWG
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
NGTB25N120FLWG
© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 0
1
Package
Shipping
TO−247 30 Units / Rail
(Pb−Free)
Publication Order Number:
NGTB25N120FLW/D
NGTB25N120FLWG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case, for IGBT
Rating
RqJC
0.65
°C/W
Thermal resistance junction−to−case, for Diode
RqJC
1.5
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
1200
−
−
V
VGE = 15 V, IC = 25 A
VGE = 15 V, IC = 25 A, TJ = 150°C
VCEsat
1.55
−
2.0
2.2
2.2
−
V
VGE = VCE, IC = 250 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 150°C
ICES
−
−
−
−
0.5
2
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V , VCE = 0 V
IGES
−
−
100
nA
Cies
−
5200
−
pF
Coes
−
144
−
Cres
−
94
−
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Gate charge total
Qg
220
Qge
40
Qgc
98
td(on)
91
tr
26
td(off)
228
tf
160
Eon
1.50
Turn−off switching loss
Eoff
0.95
Total switching loss
Ets
2.45
Turn−on delay time
td(on)
88
Gate to emitter charge
VCE = 600 V, IC = 25 A, VGE = 15 V
Gate to collector charge
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 25°C
VCC = 600 V, IC = 25 A
Rg = 10 W
VGE = 0 V/ 15V
Rise time
tr
28
td(off)
240
tf
270
Eon
1.8
Turn−off switching loss
Eoff
1.6
Total switching loss
Ets
3.4
Turn−off delay time
Fall time
Turn−on switching loss
TJ = 125°C
VCC = 600 V, IC = 25 A
Rg = 10 W
VGE = 0 V/ 15V
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2
ns
mJ
ns
mJ
NGTB25N120FLWG
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
VGE = 0 V, IF = 25 A
VGE = 0 V, IF = 25 A, TJ = 150°C
TJ = 25°C
IF = 25 A, VR = 400 V
diF/dt = 200 A/ms
Min
Typ
Max
Unit
VF
2.2
2.5
2.8
V
trr
240
ns
Qrr
1.5
mc
Irrm
15
A
trr
260
ns
Qrr
2.0
mc
Irrm
19
A
DIODE CHARACTERISTIC
Forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
TJ = 125°C
IF = 25 A, VR = 400 V
diF/dt = 200 A/ms
Reverse recovery current
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3
NGTB25N120FLWG
TYPICAL CHARACTERISTICS
300
TJ = 25°C
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
300
250
VGE = 20 to 15 V
200
13 V
150
11 V
100
10 V
9V
50
0
0
1
2
3
4
5
8V
7V
7
6
11 V
100
10 V
9V
50
8V
7V
0
1
2
3
4
5
6
7
Figure 1. Output Characteristics
Figure 2. Output Characteristics
8
200
IC, COLLECTOR CURRENT (A)
VGE = 20 to 15 V
250
13 V
200
11 V
150
10 V
100
9V
50
7V
8V
0
1
2
3
4
5
6
7
150
TJ = 25°C
125
TJ = 150°C
100
75
50
25
0
4
8
12
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
1000
100
Coes
Cres
25
50
75
100
16
120
Cies
0
175
0
8
IF, FORWARD CURRENT (A)
IC, COLLECTOR CURRENT (A)
150
VCE, COLLECTOR−EMITTER VOLTAGE (V)
10,000
CAPACITANCE (pF)
13 V
VCE, COLLECTOR−EMITTER VOLTAGE (V)
TJ = −40°C
10
VGE = 20 to 15 V
200
0
8
300
0
TJ = 150°C
250
125
150
175
100
80
60
40
TJ = 125°C
20
0
200
TJ = 25°C
0
0.5
1.0
1.5
2.0
2.5 3.0 3.5
4.0 4.5 5.0 5.5
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VF, FORWARD VOLTAGE (V)
Figure 5. Typical Capacitance
Figure 6. Diode Forward Characteristics
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4
NGTB25N120FLWG
TYPICAL CHARACTERISTICS
2.5
VCE = 600 V
12
8
4
0
0
50
100
200
150
250
300
0.5
0
350
20
40
60
80
100
120
140
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Gate Charge
Figure 8. Energy Loss vs. Temperature
160
4
td(off)
100
td(on)
tr
10
VCE = 600 V
VGE = 15 V
IC = 25 A
Rg = 10 W
0
20
40
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
3.5
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
0
QG, GATE CHARGE (nC)
3
2.5
2
Eon
1.5
Eoff
1
0.5
60
80
100
120
140
0
160
8
20
24
28 32
36 40
44
Figure 9. Switching Time vs. Temperature
Figure 10. Energy Loss vs. IC
5.0
SWITCHING LOSS (mJ)
td(on)
tr
10
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
12
VCE = 600 V
VGE = 15 V
IC = 25 A
TJ = 150°C
4.5
td(off)
8
16
IC, COLLECTOR CURRENT (A)
tf
100
12
TJ, JUNCTION TEMPERATURE (°C)
1000
SWITCHING TIME (ns)
Eoff
1
tf
1
Eon
1.5
1000
1
VCE = 600 V
VGE = 15 V
IC = 25 A
Rg = 10 W
2
SWITCHING LOSS (mJ)
VGE, GATE−EMITTER VOLTAGE (V)
16
16
20
24
28
32
36
40
44
48
4.0
3.5
48
52
Eon
3.0
2.5
Eoff
2.0
1.5
1.0
0.5
0
52
5
15
25
35
45
55
65
IC, COLLECTOR CURRENT (A)
Rg, GATE RESISTOR (W)
Figure 11. Switching Time vs. IC
Figure 12. Energy Loss vs. Rg
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5
75
85
NGTB25N120FLWG
TYPICAL CHARACTERISTICS
10,000
3.5
tf
td(on)
100
tr
VCE = 600 V
VGE = 15 V
IC = 25 A
TJ = 150°C
10
1
SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
1000
5
15
25
35
45
55
65
1
375 425
475
525
575
625
675
725 775
Rg, GATE RESISTOR (W)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 13. Switching Time vs. Rg
Figure 14. Energy Loss vs. VCE
1000
IC, COLLECTOR CURRENT (A)
td(off)
td(on)
VGE = 15 V
IC = 25 A
Rg = 10 W
TJ = 150°C
375 425
475
525
575
625
675
725
50 ms
100
100 ms
10
dc operation
1
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
0.1
0.01
775
1 ms
1
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Time vs. VCE
Figure 16. Safe Operating Area
1000
IC, COLLECTOR CURRENT (A)
SWITCHING TIME (ns)
Eoff
1.5
0
tr
1
Eon
2
85
75
tf
10
2.5
0.5
1000
100
VGE = 15 V
IC = 25 A
Rg = 10 W
TJ = 150°C
3
td(off)
100
10
1
VGE = 15 V, TC = 125°C
1
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Reverse Bias Safe Operating Area
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6
NGTB25N120FLWG
TYPICAL CHARACTERISTICS
THERMAL RESPONSE (ZqJC)
1
50% Duty Cycle
RqJC = 0.65
20%
0.1 10%
Junction R1
5%
1%
C2
C1
Case
0.00001
Ri (°C/W)
0.02659
0.06231
0.10246
0.2121
0.1057
Cn
ti (sec)
1.0E−4
1.76E−4
0.002
0.1
2.0
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.001
0.000001
Rn
Ci = ti/Ri
2%
0.01
R2
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 18. IGBT Transient Thermal Impedance
10
THERMAL RESPONSE (ZqJC)
RqJC = 1.5
1
50% Duty Cycle
20%
10%
0.1 5%
2%
0.01
0.001
R1
Junction
R2
Case
Ci = ti/Ri
C1
1%
0.00001
Cn
C2
Ri (°C/W)
ti (sec)
0.19655
0.414
0.5
0.345
0.0934
1.48E−4
0.002
0.03
0.1
2.0
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.000001
Rn
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 19. Diode Transient Thermal Impedance
Figure 20. Test Circuit for Switching Characteristics
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7
10
100
1000
NGTB25N120FLWG
Figure 21. Definition of Turn On Waveform
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8
NGTB25N120FLWG
Figure 22. Definition of Turn Off Waveform
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9
NGTB25N120FLWG
PACKAGE DIMENSIONS
TO−247
CASE 340L−02
ISSUE F
−T−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
C
−B−
E
U
N
L
4
A
−Q−
1
2
0.63 (0.025)
3
M
T B
M
P
−Y−
K
F 2 PL
W
J
D 3 PL
0.25 (0.010)
M
Y Q
MILLIMETERS
MIN
MAX
20.32
21.08
15.75
16.26
4.70
5.30
1.00
1.40
1.90
2.60
1.65
2.13
5.45 BSC
1.50
2.49
0.40
0.80
19.81
20.83
5.40
6.20
4.32
5.49
--4.50
3.55
3.65
6.15 BSC
2.87
3.12
STYLE 4:
PIN 1.
2.
3.
4.
H
G
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
U
W
INCHES
MIN
MAX
0.800
8.30
0.620
0.640
0.185
0.209
0.040
0.055
0.075
0.102
0.065
0.084
0.215 BSC
0.059
0.098
0.016
0.031
0.780
0.820
0.212
0.244
0.170
0.216
--0.177
0.140
0.144
0.242 BSC
0.113
0.123
GATE
COLLECTOR
EMITTER
COLLECTOR
S
ON Semiconductor and
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
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NGTB25N120FLW/D