ONSEMI NGP8203N

NGP8203N
Ignition IGBT
20 A, 400 V, N−Channel TO−220
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
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20 AMPS
400 VOLTS
VCE(on) = 1.3 V @
IC = 10 A, VGE . 4.5 V
Features
• Ideal for Coil−on−Plug and Driver−on−Coil Applications
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
•
•
•
•
•
Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE)
C
RG
G
RGE
Applications
E
• Ignition Systems
MARKING
DIAGRAM
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Collector−Emitter Voltage
Rating
VCES
440
V
Collector−Gate Voltage
VCER
440
V
Gate−Emitter Voltage
VGE
"15
V
Collector Current−Continuous
@ TC = 25°C − Pulsed
IC
20
50
ADC
AAC
Continuous Gate Current
IG
1.0
mA
Transient Gate Current (t≤2 ms, f≤100 Hz)
IG
20
mA
ESD (Charged−Device Model)
ESD
2.0
kV
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD
ESD (Machine Model) R = 0 W, C = 200 pF
ESD
500
V
PD
150
1.0
Watts
W/°C
TJ, Tstg
−55 to +175
°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating & Storage Temperature Range
August, 2006 − Rev. 1
1
TO−220
CASE 221A
STYLE 9
G C E
kV
8.0
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2006
NGP
8203N
YWW
1
NGP8203N = Device Code
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
NGP8203N
TO−220
50 Units / Rail
Publication Order Number:
NGP8203N/D
NGP8203N
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C)
Symbol
Characteristic
Single Pulse Collector−to−Emitter Avalanche Energy
VCC = 50 V, VGE = 5.0 V, Pk IL = 16.7 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 25°C
VCC = 50 V, VGE = 5.0 V, Pk IL = 14.9 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 150°C
VCC = 50 V, VGE = 5.0 V, Pk IL = 14.1 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 175°C
Reverse Avalanche Energy
VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C
EAS
Value
Unit
mJ
250
200
180
EAS(R)
mJ
2000
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Case
RqJC
1.0
°C/W
Thermal Resistance, Junction−to−Ambient
RqJA
62.5
°C/W
TL
275
°C
Maximum Temperature for Soldering Purposes, 1/8″ from case for 5 seconds (Note 1)
1. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
BVCES
IC = 2.0 mA
TJ = −40°C to 175°C
370
395
420
V
IC = 10 mA
TJ = −40°C to 175°C
390
415
440
VGE = 0 V,
VCE = 15 V
TJ = 25°C
0.1
1.0
mA
mA
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage
Zero Gate Voltage Collector Current
Reverse Collector−Emitter Clamp
Voltage
Reverse Collector−Emitter Leakage
Current
Gate−Emitter Clamp Voltage
Gate−Emitter Leakage Current
ICES
TJ = 25°C
0.5
1.5
10
VCE = 200 V,
VGE = 0 V
TJ = 175°C
1.0
25
100*
TJ = −40°C
0.4
0.8
5.0
TJ = 25°C
30
35
39
IC = −75 mA
TJ = 175°C
35
39
45*
TJ = −40°C
30
33
37
TJ = 25°C
0.05
0.1
0.5
TJ = 175°C
1.0
5.0
10*
TJ = −40°C
0.005
0.01
0.1
BVCES(R)
ICES(R)
VCE = −24 V
V
mA
BVGES
IG = "5.0 mA
TJ = −40°C to 175°C
12
12.5
14
V
IGES
VGE = "5.0 V
TJ = −40°C to 175°C
200
300
350*
mA
Gate Resistor (Optional)
RG
TJ = −40°C to 175°C
70
Gate−Emitter Resistor
RGE
TJ = −40°C to 175°C
14.25
16
25
kW
TJ = 25°C
1.5
1.8
2.1
V
TJ = 175°C
0.7
1.0
1.3
TJ = −40°C
1.7
2.0
2.3*
4.0
4.6
5.2
W
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGE(th)
IC = 1.0 mA,
VGE = VCE
Threshold Temperature Coefficient
(Negative)
*Maximum Value of Characteristic across Temperature Range.
2. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
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2
mV/°C
NGP8203N
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
TJ = 25°C
0.95
1.15
1.35
V
TJ = 175°C
0.7
0.95
1.15
TJ = −40°C
1.0
1.3
1.40
TJ = 25°C
0.95
1.25
1.45
TJ = 175°C
0.8
1.05
1.25
TJ = −40°C
1.1
1.4
1.5
TJ = 25°C
0.85
1.15
1.4
TJ = 175°C
0.7
0.95
1.2
TJ = −40°C
1.0
1.3
1.6*
TJ = 25°C
1.0
1.3
1.6
TJ = 175°C
0.8
1.05
1.4
TJ = −40°C
1.1
1.4
1.7*
TJ = 25°C
1.15
1.45
1.7
TJ = 175°C
1.0
1.3
1.55
TJ = −40°C
1.25
1.55
1.8*
1.6
1.9
ON CHARACTERISTICS (Note 3)
Collector−to−Emitter On−Voltage
VCE(on)
IC = 6.5 A,
VGE = 3.7 V
IC = 9.0 A,
VGE = 3.9 V
IC = 7.5 A,
VGE = 4.5 V
IC = 10 A,
VGE = 4.5 V
IC = 15 A,
VGE = 4.5 V
Forward Transconductance
gfs
TJ = 25°C
1.3
IC = 20 A,
VGE = 4.5 V
TJ = 175°C
1.2
1.5
1.8
TJ = −40°C
1.4
1.75
2.0*
IC = 6.0 A,
VCE = 5.0 V
TJ = 25°C
10
18
25
Mhos
1100
1300
1500
pF
70
80
90
18
20
22
TJ = 25°C
6.0
8.0
10
TJ = 175°C
6.0
8.0
10
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Transfer Capacitance
CRSS
f = 10 kHz, VCE = 25 V
TJ = 25°C
SWITCHING CHARACTERISTICS
Turn−Off Delay Time (Resistive)
Fall Time (Resistive)
Turn−Off Delay Time (Inductive)
Fall Time (Inductive)
Turn−On Delay Time
Rise Time
td(off)
tf
VCC = 300 V, IC = 9.0 A
RG = 1.0 kW, RL = 33 W,
VGE = 5.0 V
td(off)
tf
VCC = 300 V, IC = 9.0 A
RG = 1.0 kW,
L = 300 mH, VGE = 5.0 V
td(on)
tr
VCC = 14 V, IC = 9.0 A
RG = 1.0 kW, RL = 1.5 W,
VGE = 5.0 V
*Maximum Value of Characteristic across Temperature Range.
3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
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3
TJ = 25°C
4.0
6.0
8.0
TJ = 175°C
8.0
10.5
14
TJ = 25°C
3.0
5.0
7.0
TJ = 175°C
5.0
7.0
9.0
TJ = 25°C
1.5
3.0
4.5
TJ = 175°C
5.0
7.0
10
TJ = 25°C
1.0
1.5
2.0
TJ = 175°C
1.0
1.5
2.0
TJ = 25°C
4.0
6.0
8.0
TJ = 175°C
3.0
5.0
7.0
mSec
NGP8203N
TYPICAL ELECTRICAL CHARACTERISTICS
400
30
TJ = 25°C
IA, AVALANCHE CURRENT (A)
SCIS ENERGY (mJ)
350
300
250
TJ = 175°C
200
150
100
VCC = 14 V
VGE = 5.0 V
RG = 1000 W
50
0
0
2
6
4
8
VCC = 14 V
VGE = 5.0 V
RG = 1000 W
25
L = 1.8 mH
20
L = 3.0 mH
15
10
L = 10 mH
5
0
−50
10
−25
INDUCTOR (mH)
IC, COLLECTOR CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
60
IC = 25 A
IC = 20 A
IC = 15 A
1.25
IC = 10 A
1.0
IC = 7.5 A
0.75
0.5
0.25
VGE = 4.5 V
0.0
−50
−25
0
25
50
75
100
150
125
50
100
125
150 175
4V
TJ = 175°C
40
3.5 V
30
3V
20
2.5 V
10
0
175
4.5 V
5V
0
1
2
3
4
5
6
7
8
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 3. Collector−to−Emitter Voltage vs.
Junction Temperature
Figure 4. Collector Current vs.
Collector−to−Emitter Voltage
60
60
VGE = 10 V
50
4.5 V
4V
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
75
VGE = 10 V
TJ, JUNCTION TEMPERATURE (°C)
5V
40
TJ = 25°C
3.5 V
30
20
3V
10
0
50
Figure 2. Open Secondary Avalanche Current
vs. Temperature
2.0
1.5
25
TJ, JUNCTION TEMPERATURE (°C)
Figure 1. Self Clamped Inductive Switching
1.75
0
2.5 V
0
1
2
3
4
5
6
7
VGE = 10 V
4V
50
5V
40
TJ = −40°C
3.5 V
30
20
3V
10
0
8
4.5 V
2.5 V
0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
1
2
3
4
5
6
7
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector Current vs.
Collector−to−Emitter Voltage
Figure 6. Collector Current vs.
Collector−to−Emitter Voltage
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8
NGP8203N
TYPICAL ELECTRICAL CHARACTERISTICS
10000
COLLECTOR TO EMITTER LEAKAGE
CURRENT (mA)
IC, COLLECTOR CURRENT (A)
45
VCE = 5 V
40
1000
35
30
25
20
TJ = 25°C
15
10
TJ = 175°C
5
0
0
0.5
1
1.5
TJ = −40°C
2
2.5
3
3.5
4
10
VCE = 200 V
1.0
0.1
−50
−25
0
25
50
75
100
125
150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Transfer Characteristics
Figure 8. Collector−to−Emitter Leakage
Current vs. Temperature
10000
2.25
Mean
1.75
Mean − 4 s
1.50
Ciss
1000
C, CAPACITANCE (pF)
Mean + 4 s
2.00
1.25
1.00
0.75
0.50
Coss
100
Crss
10
1.0
0.25
0
−50
−25
0
25
50
75
100
125
150
0.1
175
5
10
15
20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 9. Gate Threshold Voltage vs.
Temperature
Figure 10. Capacitance vs.
Collector−to−Emitter Voltage
12
12
10
10
tfall
8
tdelay
6
VCC = 300 V
VGE = 5.0 V
RG = 1000 W
IC = 9.0 A
RL = 33 W
4
2
0
25
0
TJ, JUNCTION TEMPERATURE (°C)
SWITCHING TIME (ms)
GATE THRESHOLD VOLTAGE (V)
100
VGE, GATE TO EMITTER VOLTAGE (V)
2.50
SWITCHING TIME (ms)
VCE = −24 V
50
75
100
125
150
8
VCC = 300 V
VGE = 5.0 V
RG = 1000 W
IC = 9.0 A
L = 300 mH
25
tdelay
6
tfall
4
2
0
25
175
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Resistive Switching Fall Time vs.
Temperature
Figure 12. Inductive Switching Fall Time vs.
Temperature
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5
R(t), TRANSIENT THERMAL RESISTANCE (°C/Watt)
NGP8203N
100
Duty Cycle = 0.5
0.2
10
0.1
0.05
1
0.02
0.01
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
P(pk)
t1
0.1
t2
Single Pulse
0.01
0.000001
DUTY CYCLE, D = t1/t2
0.00001
0.0001
0.001
0.01
0.1
TJ(pk) − TA = P(pk) RqJA(t)
For D=1: RqJC X R(t) for t ≤ 0.1 s
1
10
100
1000
t,TIME (S)
RqJC(t), TRANSIENT THERMAL RESISTANCE (°C/Watt)
Figure 13. Transient Thermal Resistance
(Non−normalized Junction−to−Ambient)
1
Duty Cycle = 0.5
0.2
0.1
0.1
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
P(pk)
0.05
t1
0.02
t2
0.01
0.01
0.000001
TJ(pk) − TA = P(pk) RqJC(t)
DUTY CYCLE, D = t1/t2
Single Pulse
0.00001
0.0001
0.001
0.01
t,TIME (S)
Figure 14. Best Case Transient Thermal Resistance
(Non−normalized Junction−to−Case Mounted on Cold Plate)
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0.1
1
NGP8203N
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AD
−T−
B
F
T
SEATING
PLANE
C
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
−−−
−−−
0.080
STYLE 9:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
GATE
COLLECTOR
EMITTER
COLLECTOR
ON Semiconductor and
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NGP8203N/D