ONSEMI NVD6820NL

NVD6820NL
Power MOSFET
90 V, 17 mW, 50 A, Single N−Channel
Features
Low RDS(on) to Minimize Conduction Losses
High Current Capability
Avalanche Energy Specified
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJC (Notes 1 & 3)
Power Dissipation RqJC
(Note 1)
Continuous Drain
Current RqJA (Notes 1,
2 & 3)
Power Dissipation RqJA
(Notes 1 & 2)
Pulsed Drain Current
TC = 25°C
Steady
State
Symbol
Value
Unit
VDSS
90
V
VGS
"20
V
ID
50
A
TC = 100°C
TC = 25°C
PD
TA = 25°C
Steady
State
ID
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VGS = 10 V, IL(pk) = 31 A,
L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
D
N−Channel
W
100
S
A
10
4
PD
4.0
W
1 2
DPAK
CASE 369C
STYLE 2
2.0
IDM
310
A
TJ, Tstg
−55 to
175
°C
IS
50
A
EAS
144
mJ
TL
260
°C
4
Drain
2
1 Drain 3
Gate Source
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction−to−Case − Steady State (Drain)
RqJC
1.5
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
38
1. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
3
MARKING DIAGRAMS
& PIN ASSIGNMENT
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Parameter
50 A
20.4 mW @ 4.5 V
7.0
TA = 100°C
TA = 25°C, tp = 10 ms
ID
16.7 mW @ 10 V
90 V
50
TA = 100°C
TA = 25°C
RDS(on)
V(BR)DSS
G
35
TC = 100°C
http://onsemi.com
YWW
68
20LG
•
•
•
•
•
Y
WW
6820L
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NVD6820NLT4G
DPAK
(Pb−Free)
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
August, 2012 − Rev. 0
1
Publication Order Number:
NVD6820NL/D
NVD6820NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
90
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
87
IDSS
Gate−to−Source Leakage Current
V
VGS = 0 V,
VDS = 90 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
100
IGSS
VDS = 0 V, VGS = "20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
"100
nA
2.5
V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
1.5
−6.7
mV/°C
VGS = 10 V, ID = 20 A
11.6
16.7
VGS = 4.5 V, ID = 20 A
12.9
20.4
mW
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Threshold Gate Charge
QG(TOT)
253
VGS = 4.5 V, VDS = 72 V,
ID = 20 A
44
VGS = 10 V, VDS = 72 V,
ID = 20 A
83
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
pF
4209
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
187
nC
4.3
VGS = 10 V, VDS = 72 V,
ID = 20 A
12.5
22
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
ns
19
VGS = 10 V, VDD = 72 V,
ID = 20 A, RG = 2.5 W
tf
98
36
59
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.84
TJ = 125°C
0.72
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 20 A
39
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 20 A
QRR
http://onsemi.com
2
V
ns
27
12
55
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
1.2
nC
NVD6820NL
TYPICAL CHARACTERISTICS
100
4.5 V
VDS ≥ 10 V
3.8 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
100
TJ = 25°C
80
3.6 V
60
3.4 V
40
3.2 V
20
3.0 V
2.8 V
0
1
2
3
4
TJ = 25°C
20
TJ = 125°C
TJ = −55°C
2.0
2.5
3.0
3.5
4.0
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
ID = 20 A
TJ = 25°C
0.016
0.015
0.014
0.013
0.012
0.011
2
4
6
8
10
0.016
TJ = 25°C
0.015
0.014
VGS = 4.5 V
0.013
0.012
VGS = 10 V
0.011
0.010
10
20
30
50
40
60
70
80
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
100 k
ID = 20 A
VGS = 10 V
2.2
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (Normalized)
40
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.017
2.8
60
VDS, DRAIN−TO−SOURCE (V)
0.018
0.010
80
0
5
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VGS = 10 V
1.6
1.0
0.4
−50 −25
0
25
50
75
100
125
150
175
VGS = 0 V
TJ = 150°C
10 k
TJ = 125°C
1k
10
20
30
40
50
60
70
80
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
3
90
NVD6820NL
TYPICAL CHARACTERISTICS
Ciss
4000
3000
2000
1000
Coss
0 Crss
0
10
1000
20
30
50
40
60
70
80
90
8
6
Qgs
4
Qgd
VDS = 72 V
ID = 20 A
TJ = 25°C
2
0
0
10
20
30
40
50
60
70
80
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
80
tr
tf
td(off)
td(on)
10
QT
QG, TOTAL GATE CHARGE (nC)
VDS = 72 V
ID = 20 A
VGS = 10 V
100
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
IS, SOURCE CURRENT (A)
t, TIME (ns)
VGS = 0 V
TJ = 25°C
1
10
VGS = 0 V
TJ = 25°C
60
40
20
0
0.50
100
90
0.60
0.70
0.80
0.90
1.00
1.10
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
100 ms
ID, DRAIN CURRENT (A)
C, CAPACITANCE (pF)
5000
VGS, GATE−TO−SOURCE VOLTAGE (V)
6000
10 ms
1 ms
10
10 ms
VGS = 10 V
1 Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
0.1
0.1
dc
1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
http://onsemi.com
4
100
NVD6820NL
TYPICAL CHARACTERISTICS
RqJC, R(t) (°C/W)
10
1
0.1
0.01
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (sec)
Figure 12. Thermal Response
http://onsemi.com
5
0.1
1
10
NVD6820NL
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE D
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
6
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NVD6820NL/D