ONSEMI NTD5865N

NTD5865N
N-Channel Power MOSFET
60 V, 38 A, 18 mW
Features
Low Gate Charge
Fast Switching
High Current Capability
100% Avalanche Tested
These Devices are Pb−Free, Halogen Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage − Continuous
VGS
"20
V
Gate−to−Source Voltage
− Non−Repetitive (tp < 10 ms)
VGS
"30
V
ID
38
A
Parameter
Power Dissipation
(RqJC)
Steady
State
TC = 100°C
TC = 25°C
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source
Avalanche Energy
RDS(on) MAX
ID MAX
60 V
18 mW @ 10 V
38 A
D
G
TC = 25°C
Pulsed Drain Current
V(BR)DSS
L = 0.1 mH
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
24
PD
52
W
IDM
137
A
TJ, Tstg
−55 to
150
°C
IS
38
A
EAS
36
mJ
IAS
27
A
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case (Drain)
RqJC
2.4
°C/W
Junction−to−Ambient − Steady State (Note 1)
RqJA
42
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces.
S
N−CHANNEL MOSFET
4
4
1 2
1
3
DPAK
CASE 369C
(Surface Mount)
STYLE 2
2
3
IPAK
CASE 369D
(Straight Lead)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
4
Drain
YWW
58
65NG
Continuous Drain
Current (RqJC)
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YWW
58
65NG
•
•
•
•
•
2
1 Drain 3
Gate Source
Y
WW
5865N
G
1 2 3
Gate Drain Source
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
May, 2010 − Rev. 0
1
Publication Order Number:
NTD5865N/D
NTD5865N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
59.2
IDSS
Gate−to−Source Leakage Current
V
VGS = 0 V,
VDS = 60 V
mV/°C
TJ = 25°C
1.0
TJ = 150°C
100
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
4.0
V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
2.0
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V, ID = 20 A
14
gFS
VDS = 15 V, ID = 20 A
6.9
S
1261
pF
Forward Transconductance
8.6
mV/°C
18
mW
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
136
85
nC
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
7.7
RG
1.5
W
td(on)
10
ns
Gate Resistance
23
VGS = 10 V, VDS = 48 V,
ID = 38 A
1.5
6.7
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
tr
Turn−Off Delay Time
Fall Time
td(off)
VGS = 10 V, VDD = 48 V,
ID = 38 A, RG = 2.5 W
tf
17
20
3.5
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
VSD
VGS = 0 V,
IS = 38 A
TJ = 25°C
0.94
TJ = 125°C
0.85
tRR
ta
tb
1.2
23
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 38 A
QRR
V
ns
17
6
20
nC
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Package
Shipping†
NTD5865N−1G
DPAK (Straight Lead)
(Pb−Free)
75 Units / Rail
NTD5865NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
Order Number
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
NTD5865N
70
5.5 V
40
30
5.0 V
20
10
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
50
1
2
3
4
40
TJ = 25°C
30
20
TJ = 125°C
2
6
7
Figure 2. Transfer Characteristics
ID = 38 A
TJ = 25°C
0.020
0.015
5
6
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.018
VGS = 10 V
TJ = 25°C
0.016
0.014
0.012
0.010
5
10
15
20
25
30
35
40
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current
10000
2.2
VGS = 0 V
ID = 38 A
VGS = 10 V
IDSS, LEAKAGE (mA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
5
Figure 1. On−Region Characteristics
0.025
1.8
4
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.030
2.0
3
TJ = −55°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.035
4
50
0
5
0.040
0.010
60
10
4.5 V
0
VDS ≥ 10 V
70
6V
60
0
80
TJ = 25°C
VGS = 10 V
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
80
1.6
1.4
1.2
1.0
TJ = 150°C
1000
TJ = 125°C
0.8
0.6
−50
−25
0
25
50
75
100
125
150
100
10
20
30
40
50
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
60
NTD5865N
10
VGS = 0 V
C, CAPACITANCE (pF)
1400
Ciss
TJ = 25°C
1200
1000
800
600
400
Coss
200
Crss
0
0
10
20
30
40
50
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
60
VGS, GATE−TO−SOURCE VOLTAGE (V)
1600
QT
8
6
Qgs
4
2
VDS = 48 V
ID = 38 A
TJ = 25°C
0
0
5
10
15
20
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
40
VDD = 48 V
ID = 38 A
VGS = 10 V
IS, SOURCE CURRENT (A)
t, TIME (ns)
td(off)
tr
10
td(on)
tf
1
1
10
100
TJ = 25°C
30
25
20
15
10
5
0
0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
40
VGS = 10 V
SINGLE PULSE
TC = 25°C
10 ms
10 ms
1 ms
100 ms
10
1
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
ID = 27 A
35
AVALANCHE ENERGY (mJ)
ID, DRAIN CURRENT (A)
VGS = 0 V
35
100
0.1
25
Figure 8. Gate−to−Source vs. Total Charge
1000
100
Qgd
1
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
30
25
20
15
10
5
0
25
50
75
100
125
TJ, STARTING JUNCTION TEMPERATURE
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
150
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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4
NTD5865N
RqJC(t) (°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
10
Duty Cycle = 0.5
1
0.1
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
t, PULSE TIME (s)
Figure 13. Thermal Response
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5
0.01
0.1
1
NTD5865N
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA−01
ISSUE A
−T−
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
H
J
L
R
S
U
V
Z
H
3
U
F
J
L
D
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
2 PL
0.13 (0.005)
M
T
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.101
5.80
0.228
3.0
0.118
1.6
0.063
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
6
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.025 0.035
0.018 0.024
0.030 0.045
0.386 0.410
0.018 0.023
0.090 BSC
0.180 0.215
0.024 0.040
0.020
−−−
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.63
0.89
0.46
0.61
0.77
1.14
9.80 10.40
0.46
0.58
2.29 BSC
4.57
5.45
0.60
1.01
0.51
−−−
0.89
1.27
3.93
−−−
NTD5865N
PACKAGE DIMENSIONS
IPAK−3 (SINGLE GAUGE)
CASE 369D−01
ISSUE B
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
D
G
H
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
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For additional information, please contact your local
Sales Representative
NTD5865N/D