ONSEMI NTD6415AN-1G

NTD6415AN
N-Channel Power MOSFET
100 V, 23 A, 55 mW
Features
Low RDS(on)
High Current Capability
100% Avalanche Tested
These Devices are Pb−Free and are RoHS Compliant
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MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
100
V
Gate−to−Source Voltage − Continuous
VGS
$20
V
ID
23
A
Continuous Drain
Current RqJC
Steady
State
Power Dissipation
RqJC
Steady
State
Pulsed Drain Current
TC = 25°C
TC = 100°C
TC = 25°C
tp = 10 ms
Operating and Storage Temperature Range
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) =
23 A, L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
RDS(on) MAX
ID MAX
(Note 1)
100 V
55 mW @ 10 V
23 A
N−Channel
D
16
PD
83
W
IDM
89
A
TJ, Tstg
−55 to
+175
°C
IS
23
A
EAS
79
mJ
G
S
4
4
TL
260
°C
THERMAL RESISTANCE RATINGS
Parameter
V(BR)DSS
Symbol
Max
Unit
Junction−to−Case (Drain) Steady State
RqJC
1.8
°C/W
Junction−to−Ambient (Note 1)
RqJA
39
1
1 2
3
DPAK
CASE 369AA
STYLE 2
2
3
IPAK
CASE 369D
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENTS
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
4 Drain
YWW
64
15ANG
4 Drain
1
Gate
2
Drain
6415AN
Y
WW
G
YWW
64
15ANG
•
•
•
•
3
Source
1
Gate
= Device Code
= Year
= Work Week
= Pb−Free Package
2
Drain
3
Source
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
November, 2009 − Rev. 0
1
Publication Order Number:
NTD6415AN/D
NTD6415AN
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
100
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
113
VGS = 0 V,
VDS = 100 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
100
IGSS
VDS = 0 V, VGS = "20 V
VGS(TH)
VGS = VDS, ID = 250 mA
"100
mA
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
2.0
4.0
VGS(TH)/TJ
Drain−to−Source On−Resistance
RDS(on)
VGS = 10 V, ID = 23 A
47
gFS
VGS = 5 V, ID = 10 A
13
S
700
pF
Forward Transconductance
7.6
V
Negative Threshold Temperature
Coefficient
mV/°C
55
mW
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
52
Total Gate Charge
QG(TOT)
29
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
VGS = 0 V, f = 1.0 MHz, VDS = 25 V
110
nC
1.2
VGS = 10 V, VDS = 80 V, ID = 23 A
5
Gate−to−Drain Charge
QGD
14.6
Plateau Voltage
VGP
5.7
V
Gate Resistance
RG
2.3
W
td(on)
10
ns
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
tr
Turn−Off Delay Time
Fall Time
td(off)
VGS = 10 V, VDD = 80 V,
ID = 23 A, RG = 6.1 W
tf
37
30
37
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
Charge Time
Ta
Discharge Time
Tb
Reverse Recovery Charge
VGS = 0 V, IS = 23 A
TJ = 25°C
0.83
TJ = 125°C
0.68
1.2
65
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 23 A
QRR
V
ns
46
19
176
nC
2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Device
Package
Shipping†
NTD6415ANT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
NTD6415AN−1G
IPAK
(Pb−Free)
75 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
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2
NTD6415AN
40
TJ = 25°C
VDS w 10 V
7.5 V
10 V
6.0 V
6.5 V
30
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
40
5.5 V
20
5.0 V
10
30
20
TJ = 25°C
TJ = 125°C
TJ = −55°C
10
4.5 V
0
0
1
2
3
4
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0
5
2
3
4
5
6
7
VGS, GATE−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.11
ID = 23 A
TJ = 25°C
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
3
2.5
5
6
7
8
9
10
0.14
VGS = 10 V
TJ = 175°C
0.12
TJ = 125°C
0.10
0.08
0.06
TJ = 25°C
0.04
TJ = −55°C
0.02
0.0
8
10
12
14
18
20
22
ID, DRAIN CURRENT (A)
Figure 3. On−Region versus Gate Voltage
Figure 4. On−Resistance versus Drain
Current and Gate Voltage
10000
ID = 23 A
VGS = 10 V
2
1.5
−25
0
25
50
75
100
125
150
175
TJ = 150°C
1000
100
TJ = 125°C
10
10
TJ, JUNCTION TEMPERATURE (°C)
20
30
40
50
60
70
80
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
90 100
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
24
VGS = 0 V
1
0.5
−50
16
VGS, GATE−TO−SOURCE VOLTAGE (V)
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 1. On−Region Characteristics
8
NTD6415AN
800
Ciss
400
0
0
1000
t, TIME (ns)
Coss
Crss
20
40
60
80
100
6
40
2
0
20
ID = 23 A
TJ = 25°C
0
5
10
15
20
25
0
30
25
tr
td(off)
td(on)
10
RG, GATE RESISTANCE (W)
TJ = 25°C
VGS = 0 V
20
15
10
5
0
0.4
100
0.5
0.6
0.7
0.8
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
80
VGS = 10 V
SINGLE PULSE
TC = 25°C
AVALANCHE ENERGY (mJ)
10
100 ms
1 ms
10 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
ID = 23 A
70
10 ms
dc
0.9
Figure 10. Diode Forward Voltage versus
Current
1000
ID, DRAIN CURRENT (A)
60
4
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
0.1
1
Qds
Qgs
Qg, TOTAL GATE CHARGE (nC)
10
1
80
Figure 8. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
tf
100
VGS
VDS
Figure 7. Capacitance Variation
VDS = 80 V
ID = 23 A
VGS = 10 V
1
8
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
100
1
100
QT
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1200
IS, SOURCE CURRENT (A)
C, CAPACITANCE (pF)
TJ = 25°C
VGS = 0 V
VGS, GATE−TO−SOURCE VOLTAGE (V)
10
1600
60
50
40
30
20
10
0
100
1000
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
25
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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4
175
NTD6415AN
10
R(t) (°C/W)
1
0.1
0.01
D = 0.01
0.02
0.01
0.05
0.2
0.5
SINGLE PULSE
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
t, PULSE TIME (s)
Figure 13. Thermal Response
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5
1
10
100
1000
NTD6415AN
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA−01
ISSUE A
−T−
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
H
J
L
R
S
U
V
Z
H
3
U
F
J
L
D
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
2 PL
0.13 (0.005)
M
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.025 0.035
0.018 0.024
0.030 0.045
0.386 0.410
0.018 0.023
0.090 BSC
0.180 0.215
0.024 0.040
0.020
−−−
0.035 0.050
0.155
−−−
T
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.101
5.80
0.228
3.0
0.118
1.6
0.063
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.63
0.89
0.46
0.61
0.77
1.14
9.80 10.40
0.46
0.58
2.29 BSC
4.57
5.45
0.60
1.01
0.51
−−−
0.89
1.27
3.93
−−−
NTD6415AN
PACKAGE DIMENSIONS
DPAK
CASE 369D−01
ISSUE B
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
D
G
H
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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7
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NTD6415AN/D