ONSEMI NVMFS5834NLT1G

NTMFS5834NL,
NVMFS5834NL
Power MOSFET
40 V, 75 A, 9.3 mW, Single N−Channel
Features
•
•
•
•
•
Low RDS(on)
Low Capacitance
Optimized Gate Charge
NVMFS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
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V(BR)DSS
RDS(ON) MAX
40 V
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJA
(Note 1)
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current RqJC
(Note 1)
TA = 25°C
TA = 25°C
Steady
State
Value
Unit
VDSS
40
V
VGS
±20
V
ID
14
A
Pulsed Drain
Current
PD
TC = 25°C
ID
Operating Junction and Storage
Temperature
Source Current (Body Diode)
W
3.6
PD
D
75
IDM
276
A
TJ, TSTG
−55 to
+175
°C
IS
75
A
48
mJ
IAS
31
A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Junction−to−Case (Bottom) (Note 1)
RqJC
1.4
Junction−to−Case (Top) (Note 1)
RqJC
4.5
Junction−to−Ambient Steady State
(Note 1)
RqJA
41
Junction−to−Ambient Steady State
(Note 2)
RqJA
75
February, 2013 − Rev. 3
S
S
S
G
1
W
107
EAS
© Semiconductor Components Industries, LLC, 2013
MARKING
DIAGRAM
A
75
Single Pulse Drain−to−Source Avalanche
Energy (L = 0.1 mH)
Parameter
N−CHANNEL MOSFET
63
TC = 100°C
tp = 10 ms
S (1,2,3)
2.5
TC = 100°C
Power Dissipation
RqJC (Note 1)
G (4)
12
TA = 100°C
TC = 25°C
D (5,6)
Symbol
TA = 100°C
75 A
13.6 mW @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
ID MAX
9.3 mW @ 10 V
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
A
Y
W
ZZ
1
D
D
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
Device
Package
Shipping†
NTMFS5834NLT1G
DFN5
1500/Tape & Reel
(Pb−Free)
NVMFS5834NLT1G
DFN5
1500/Tape & Reel
(Pb−Free)
NVMFS5834NLT3G
DFN5
5000/Tape & Reel
(Pb−Free)
Unit
°C/W
D
5834L
AYWZZ
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTMFS5834NL/D
NTMFS5834NL, NVMFS5834NL
1. Surface−mounted on FR4 board using 1 sq−in pad
(Cu area = 1.127 in sq [2 oz] including traces).
2. Surface−mounted on FR4 board using 0.155 in sq (100mm2) pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
34.7
VGS = 0 V,
VDS = 40 V
mV/°C
TJ = 25 °C
1.0
TJ = 125°C
100
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
3.0
V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
RDS(on)
1.0
5.7
mV/°C
VGS = 10 V
ID = 20 A
7.1
9.3
VGS = 4.5 V
ID = 20 A
11.3
13.6
gFS
VDS = 5 V, ID = 20 A
29
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
1231
VGS = 0 V, f = 1 MHz, VDS = 20 V
198
pF
141
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 20 V; ID = 20 A
Total Gate Charge
QG(TOT)
12
Threshold Gate Charge
QG(TH)
1.0
Gate−to−Source Charge
QGS
4.2
Gate−to−Drain Charge
QGD
6.3
Plateau Voltage
VGP
3.4
V
Gate Resistance
RG
0.7
W
VGS = 4.5 V, VDS = 20 V; ID = 20 A
24
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
10
tr
56.4
td(OFF)
VGS = 4.5 V, VDS = 20 V,
ID = 20 A, RG = 2.5 W
tf
ns
17.4
6.6
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.84
TJ = 125°C
0.72
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 20 A
1.2
V
18
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 20 A
QRR
10
108
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
ns
8.0
nC
NTMFS5834NL, NVMFS5834NL
TYPICAL CHARACTERISTICS
ID, DRAIN CURRENT (A)
4.5 V
100
75
4.0 V
50
3.5 V
25
3.0 V
0
1
2
3
4
5
100
75
50
25
TJ = 125°C
2
TJ = −55°C
3
4
5
6
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
ID = 20 A
TJ = 25°C
0.040
0.030
0.020
0.010
2
4
6
8
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.020
TJ = 25°C
0.018
0.016
VGS = 4.5 V
0.014
0.012
0.010
VGS = 10 V
0.008
0.006
0.004
5
15
25
35
45
55
65
75
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10,000
2.0
1.8
TJ = 25°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.050
0.000
125
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VDS ≥ 10 V
5.0 V
125
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
150
TJ = 25°C
10 V
VGS = 0 V
VGS = 10 V
ID = 20 A
IDSS, LEAKAGE (nA)
ID, DRAIN CURRENT (A)
150
1.6
1.4
1.2
1.0
TJ = 150°C
1,000
TJ = 125°C
0.8
0.6
−50
−25
0
25
50
75
100
125
150
175
100
10
20
30
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
40
NTMFS5834NL, NVMFS5834NL
TYPICAL CHARACTERISTICS
10
VGS = 0 V
TJ = 25°C
C, CAPACITANCE (pF)
1600
1400
VGS, GATE−TO−SOURCE VOLTAGE (V)
1800
Ciss
1200
1000
800
600
Coss
400
200
0
Crss
0
10
20
30
40
Qgd
2
0
VDS = 20 V
ID = 20 A
TJ = 25°C
0
5
10
15
20
25
40
IS, SOURCE CURRENT (A)
t, TIME (ns)
Qgs
Qg, TOTAL GATE CHARGE (nC)
tr
td(on)
td(off)
10
tf
1
10
100
VGS = 0 V
TJ = 25°C
30
20
10
0
0.5
0.6
0.7
0.8
0.9
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1.0
50
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
100
10 ms
ID, DRAIN CURRENT (A)
4
Figure 8. Gate−to−Source Voltage vs. Total
Charge
100
10
100 ms
1 ms
10 ms
1
0.01
6
Figure 7. Capacitance Variation
VDD = 32 V
ID = 20 A
VGS = 4.5 V
0.1
8
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
1
QT
VGS = 10 V
Single Pulse
TC = 25°C
dc
RDS(on) Limit
Thermal Limit
Package Limit
0.1
1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
100
40
30
20
10
0
25
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
4
175
NTMFS5834NL, NVMFS5834NL
TYPICAL CHARACTERISTICS
RqJA(t) (°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
100
Duty Cycle = 0.5
10
1
0.2
0.1
0.05
0.02
0.01
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 13. Thermal Response
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5
1
10
100
1000
NTMFS5834NL, NVMFS5834NL
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE H
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
2
A
B
D1
2X
4X
E1
2
1
2
MILLIMETERS
DIM
MIN
NOM
MAX
A
0.90
1.00
1.10
A1
0.00
−−−
0.05
b
0.33
0.41
0.51
c
0.23
0.28
0.33
D
5.15 BSC
D1
4.70
4.90
5.10
D2
3.80
4.00
4.20
E
6.15 BSC
E1
5.70
5.90
6.10
E2
3.45
3.65
3.85
e
1.27 BSC
G
0.51
0.61
0.71
K
1.20
1.35
1.50
L
0.51
0.61
0.71
L1
0.05
0.17
0.20
M
3.00
3.40
3.80
q
0_
−−−
12 _
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
0.20 C
3
q
E
c
A1
4
TOP VIEW
C
3X
e
0.10 C
SEATING
PLANE
DETAIL A
A
0.10 C
SIDE VIEW
SOLDERING FOOTPRINT*
DETAIL A
3X
8X
0.10
C A B
0.05
c
4X
e/2
1
4
0.965
K
G
0.750
1.000
L
PIN 5
(EXPOSED PAD)
4X
1.270
b
1.330
2X
0.905
2X
E2
L1
M
0.495
4.530
3.200
0.475
D2
2X
1.530
BOTTOM VIEW
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTMFS5834NL/D