TOSHIBA RN1909AFS

RN1907AFS~RN1909AFS
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor)
RN1907AFS, RN1908AFS, RN1909AFS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Unit: mm
1.0±0.05
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers the assembly cost.
Equivalent Circuit and Bias Resistor Values
C
R2
B
R1
2
5
3
4
+0.02
Complementary to the RN2907AFS~RN2909AFS
6
0.48 -0.04
•
1
0.1±0.05
Incorporating a bias resistor into a transistor reduces the parts count.
0.35 0.35
•
1.0±0.05
Two devices are incorporated into a fine-pitch, small-mold (6-pin)
package.
0.7±0.05
•
Type No.
R1 (kΩ)
R2 (kΩ)
RN1907AFS
10
47
RN1908AFS
22
47
RN1909AFS
47
22
fS6
E
0.1±0.05
0.15±0.05
0.8±0.05
0.1±0.05
1. EMITTER1
2. BASE1
3. COLLECTOR2
4. EMITTER2
5. BASE2
6. COLLECTOR1
JEDEC
―
JEITA
―
TOSHIBA
(E1)
(B1)
(C2)
(E2)
(B2)
(C1)
2-1F1D
Weight: 0.001 g (typ.)
Equivalent Circuit
(top view)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Characteristic
Collector-base voltage
Collector-emitter voltage
RN1907AFS~RN1909AFS
Symbol
Rating
Unit
VCBO
50
V
VCEO
50
V
RN1907AFS
Emitter-base voltage
RN1908AFS
6
VEBO
RN1909AFS
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Note:
V
5
4
Q2
Q1
15
IC
RN1907AFS~RN1909AFS
7
6
PC (Note 1)
80
mA
50
mW
Tj
150
°C
Tstg
−55~150
°C
1
2
3
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
1
2007-11-01
RN1907AFS~RN1909AFS
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristic
Collector cutoff current
Symbol
⎯
100
ICEO
VCE = 50 V, IB = 0
⎯
⎯
500
VEB = 6 V, IC = 0
0.088
⎯
0.131
VEB = 7 V, IC = 0
0.085
⎯
0.126
VEB = 15 V, IC = 0
0.182
⎯
0.271
80
⎯
⎯
80
⎯
⎯
70
⎯
⎯
⎯
⎯
0.15
0.8
⎯
1.8
1.0
⎯
3.0
RN1909AFS
2.0
⎯
6.4
RN1907AFS
0.6
⎯
0.9
0.7
⎯
1.2
1.5
⎯
2.6
⎯
0.7
⎯
8
10
12
17.6
22
26.4
RN1909AFS
37.6
47
56.4
RN1907AFS
0.17
0.213
0.255
0.374
0.468
0.562
1.71
2.14
2.56
RN1908AFS
IEBO
RN1908AFS
hFE
VCE = 5 V, IC = 10 mA
RN1909AFS
RN1907AFS~1909AFS
VCE (sat)
IC = 5 mA,
IB = 0.25 mA
RN1907AFS
Input voltage (ON)
Input voltage (OFF)
RN1908AFS
RN1908AFS
VI (ON)
VI (OFF)
VCE = 0.2 V, IC = 5 mA
VCE = 5 V, IC = 0.1 mA
RN1909AFS
Collector output
capacitance
RN1907AFS~1909AFS
Cob
VCB = 10 V, IE = 0,
f = 1 MHz
RN1907AFS
Input resistor
Resistor ratio
Max
⎯
RN1907AFS
Collector-emitter
saturation voltage
Typ.
VCB = 50 V, IE = 0
RN1909AFS
DC current gain
Min
ICBO
RN1907AFS~1909AFS
RN1907AFS
Emitter cutoff current
Test Condition
RN1908AFS
RN1908AFS
R1
R1/R2
RN1909AFS
2
⎯
⎯
Unit
nA
mA
V
V
V
pF
kΩ
2007-11-01
RN1907AFS~RN1909AFS
RN1907AFS
IC - VI (ON)
10
Ta = 100°C
1
25
-25
0.1
1
10
INPUT VOLTAGE VI (ON) (V)
1000
25
Ta = 100°C
-25
100
RN1908AFS
0.2
100
0.4
0.6
0.8
1
1.2
1.4
INPUT VOLTAGE VI (OFF) (V)
IC - VI (ON)
RN1908AFS
100
IC - VI (OFF)
10000
COMMON EMITTER
VCE = 0.2V
COLLECTOR CURRENT IC (uA)
COLLECTOR CURRENT IC (mA)
COMMON EMITTER
VCE = 5V
10
0.1
10
Ta = 100°C
1
25
-25
COMMON EMITTER
VCE= 5V
Ta = 100°C
1000
-25
100
25
10
0.1
0.1
1
10
INPUT VOLTAGE VI (ON) (V)
RN1909AFS
0.4
100
0.6
0.8
1
1.2
1.4
1.6
1.8
2
INPUT VOLTAGE VI (OFF) (V)
IC- VI (ON)
RN1909AFS
100
IC - VI (OFF)
10000
COMMON EMITTER
VCE = 0.2V
COLLECTOR CURRENT IC (uA)
COLLECTOR CURRENT IC (mA)
IC - VI (OFF)
RN1907AFS
10000
COMMON EMITTER
VCE = 0.2V
COLLECTOR CURRENT IC (uA)
COLLECTOR CURRENT IC (mA)
100
10
Ta = 100°C
1
25
-25
COMMON EMITTER
VCE= 5V
1000
Ta = 100°C
25
-25
100
10
0.1
0.1
1
10
INPUT VOLTAGE VI (ON) (V)
0
100
1
2
3
4
5
INPUT VOLTAGE VI (OFF) (V)
3
2007-11-01
RN1907AFS~RN1909AFS
1000
hFE - IC
RN1907AFS
Ta = 100°C
100
25
-25
Ta = 100°C
0.1
1
10
COLLECTOR CURRENT IC (mA)
1
100
hFE - IC
RN1908AFS
10
100
COLLECTOR CURRENT IC (mA)
RN1908AFS
VCE (sat) - IC
1
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) ( V)
COMMON EMITTER
VCE= 5V
Ta = 100°C
100
25
-25
10
COMMON EMITTER
IC / IB = 20
Ta = 100°C
0.1
-25
25
0.01
1
10
COLLECTOR CURRENT IC (mA)
RN1909AFS
100
1
hFE - IC
1000
1
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) ( V)
COMMON EMITTER
VCE = 5V
DC CURRENT GAIN hFE
25
-25
0.01
10
DC CURRENT GAIN hFE
COMMON EMITTER
IC / IB = 20
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) ( V)
DC CURRENT GAIN hFE
COMMON EMITTER
VCE = 5V
1000
VCE (sat) - IC
RN1907AFS
1
Ta = 100°C
100
25
-25
10
10
COLLECTOR CURRENT IC (mA)
RN1909AFS
100
VCE (sat) - IC
COMMON EMITTER
IC / IB = 20
Ta = 100°C
0.1
-25
25
0.01
1
10
COLLECTOR CURRENT IC (mA)
100
1
4
10
COLLECTOR CURRENT IC (mA)
100
2007-11-01
RN1907AFS~RN1909AFS
Type Name
Marking
6
RN1907AFS
5
4
Type Name
C6
1
2
3
6
5
4
RN1908AFS
Type Name
C7
1
2
3
6
5
4
RN1909AFS
Type Name
C8
1
2
3
5
2007-11-01
RN1907AFS~RN1909AFS
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
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including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
6
2007-11-01