RN1961CT~RN1966CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1961CT,RN1962CT,RN1963CT RN1964CT,RN1965CT,RN1966CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 1.0±0.05 ４ １ ２ ３ Incorporating a bias resistor into a transistor reduces parts count. 0.35±0.02 0.35±0.02 0.075±0.03 0.7±0.03 0.38 +0.02 -0.03 Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. • 0.05±0.03 ５ 0.6±0.02 Two devices are incorporated into a fine pitch Small Mold (6 pin) package. • ６ 0.9±0.05 0.2±0.03 0.15±0.03 0.2±0.03 • Unit: mm Complementary to RN2961CT to RN2966CT Equivalent Circuit and Bias Resistor Values C R2 B R1 E Type No. R1 (kΩ) R2 (kΩ) RN1961CT 4.7 4.7 RN1962CT 10 10 JEDEC ― RN1963CT 22 22 JEITA ― RN1964CT 47 47 TOSHIBA RN1965CT 2.2 47 RN1966CT 4.7 47 CST6 Equivalent Circuit (top view) (Q1, Q2 common) Characteristics Collector-emitter voltage RN1961CT to 1966CT RN1961CT to 1964CT Emitter-base voltage RN1965CT, 1966CT Collector current Collector power dissipation Junction temperature Storage temperature range Symbol Rating Unit VCBO 20 V VCEO 20 V 10 V VEBO 6 5 Q2 Q1 1 4 2 3 5 IC RN1961CT to RN1966CT 2-1K1A Weight: 1 mg (typ.) Absolute Maximum Ratings (Ta = 25°C) Collector-base voltage (E1) 1.EMITTER1 (E2) 2.EMITTER2 (B2) 3.BASE2 4.COLLECTOR2 (C2) (B1) 5.BASE1 6.COLLECTOR１ (C1) 50 mA 50 mW Tj 150 °C Tstg −55 to 150 °C PC (Note1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Total rating 1 2009-04-14 RN1961CT~RN1966CT Electrical Characteristics (Ta = 25°C) (Q1, Q2 common) Characteristics Collector cut-off current Symbol Test Condition ⎯ ⎯ 100 ICEO VCE = 20 V, IB = 0 ⎯ ⎯ 500 0.89 ⎯ 1.33 0.41 ⎯ 0.63 0.18 ⎯ 0.29 0.088 ⎯ 0.133 0.085 ⎯ 0.127 0.08 ⎯ 0.121 RN1961CT 30 ⎯ ⎯ RN1962CT 60 ⎯ ⎯ 100 ⎯ ⎯ 120 ⎯ ⎯ RN1965CT 120 ⎯ ⎯ RN1966CT 120 ⎯ ⎯ ⎯ ⎯ 0.15 RN1961CT 1.0 ⎯ 2.0 RN1962CT 1.0 ⎯ 2.2 1.1 ⎯ 2.7 1.2 ⎯ 3.6 RN1965CT 0.6 ⎯ 1.1 RN1966CT 0.6 ⎯ 1.2 0.8 ⎯ 1.5 0.4 ⎯ 0.8 ⎯ 1.2 ⎯ RN1961CT 3.76 4.7 5.64 RN1962CT 8 10 12 17.6 22 26.4 37.6 47 56.4 RN1965CT 1.76 2.2 2.64 RN1966CT 3.76 4.7 5.64 RN1961CT to 1964CT 0.8 1.0 1.2 RN1963CT RN1964CT VEB = 10 V, IC = 0 IEBO RN1965CT VEB = 5 V, IC = 0 RN1966CT Collector-emitter saturation voltage Input voltage (ON) Input voltage (OFF) Collector output capacitance Input resistor Resistor ratio Max VCB = 20 V, IE = 0 RN1962CT DC current gain Typ. ICBO RN1961CT to 1966CT RN1961CT Emitter cut-off current Min RN1963CT RN1964CT RN1961CT to 1966CT RN1963CT RN1964CT RN1961CT to 1964CT RN1965CT, 1966CT RN1961CT to 1966CT RN1963CT RN1964CT RN1965CT hFE VCE (sat) VI (ON) VI (OFF) Cob R1 R1/R2 RN1966CT VCE = 5 V, IC = 10 mA IC = 5 mA, IB = 0.25 mA VCE = 0.2 V, IC = 5 mA VCE = 5 V, IC = 0.1 mA VCB = 10 V, IE = 0, f = 1 MHz ⎯ ⎯ nA mA V V V pF kΩ 0.0376 0.0468 0.0562 0.08 2 Unit 0.1 0.12 2009-04-14 RN1961CT~RN1966CT (Q1,Q2 common) IC - VI(ON) RN1961CT COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) Ta=100°C 10 25 1 -25 COMMON EMITTER VCE=0.2V 0.1 1 10 INPUT VOLTAGE VI(ON) (V) 25 1 -25 COMMON EMITTER VCE=0.2V 100 0.1 10 100 IC - VI(ON) RN1964CT 100 COLLECTOR CURRENT IC (mA) 100 Ta=100°C 10 1 INPUT VOLTAGE VI(ON) (V) IC - VI(ON) RN1963CT COLLECTOR CURRENT IC (mA) Ta=100°C 10 0.1 0.1 25 1 -25 COMMON EMITTER VCE=0.2V Ta=100°C 10 25 1 -25 COMMON EMITTER VCE=0.2V 0.1 0.1 0.1 1 10 0.1 100 1 RN1965CT 10 100 INPUT VOLTAGE VI(ON) (V) INPUT VOLTAGE VI(ON) (V) IC - VI(ON) IC - VI(ON) RN1966CT 100 100 Ta=100°C COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) IC - VI(ON) RN1962CT 100 100 10 25 1 -25 COMMON EMITTER VCE=0.2V 0.1 Ta=100°C 10 25 1 -25 COMMON EMITTER VCE=0.2V 0.1 0.1 1 10 100 0.1 INPUT VOLTAGE VI(ON) (V) 1 10 100 INPUT VOLTAGE VI(ON) (V) 3 2009-04-14 RN1961CT~RN1966CT (Q1,Q2 common) RN1961CT RN1962CT IC - VI(OFF) 10000 COMMON EMITTER VCE=5V COLLECTOR CURRENT IC (μA) COLLECTOR CURRENT IC (μA) 10000 1000 Ta=100°C 25 -25 100 10 COMMON EMITTER VCE=5V 1000 Ta=100°C -25 100 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0.4 0.6 0.8 INPUT VOLTAGE VI(OFF) (V) RN1963CT 10000 1 1.2 1.4 1.6 1.8 2 INPUT VOLTAGE VI(OFF) (V) RN1964CT IC - VI(OFF) IC - VI(OFF) 10000 COMMON EMITTER VCE=5V COLLECTOR CURRENT IC (μA) COLLECTOR CURRENT IC (μA) 25 10 0.4 1000 Ta=100°C 25 -25 100 10 COMMON EMITTER VCE=5V 1000 Ta=100°C 25 -25 100 10 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0.4 0.6 0.8 INPUT VOLTAGE VI(OFF) (V) RN1965CT 1 1.2 1.4 1.6 1.8 2 INPUT VOLTAGE VI(OFF) (V) RN1966CT IC - VI(OFF) 10000 IC - VI(OFF) 10000 COMMON EMITTER VCE=5V COLLECTOR CURRENT IC (μA) COLLECTOR CURRENT IC (μA) IC - VI(OFF) 1000 Ta=100°C 25 -25 100 10 COMMON EMITTER VCE=5V 1000 Ta=100°C 25 -25 100 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 INPUT VOLTAGE VI(OFF) (V) 0.2 0.4 0.6 0.8 1 1.2 1.4 INPUT VOLTAGE VI(OFF) (V) 4 2009-04-14 RN1961CT~RN1966CT (Q1,Q2 common) RN1961CT RN1962CT hFE - IC DC CURRENT GAIN hFE DC CURRENT GAIN hFE 1000 Ta=100°C 100 hFE - IC 1000 25 -25 10 Ta=100°C 25 100 -25 COMMON EMITTER VCE = 5V COMMON EMITTER VCE = 5V 10 1 1 10 1 100 10 COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) RN1963CT 100 RN1964CT hFE - IC 1000 hFE - IC 1000 DC CURRENT GAIN hFE DC CURRENT GAIN hFE Ta=100°C Ta=100°C 25 100 -25 25 -25 100 COMMON EMITTER VCE = 5V COMMON EMITTER VCE = 5V 10 10 1 10 100 1 10 COLLECTOR CURRENT IC (mA) RN1965CT COLLECTOR CURRENT IC (mA) RN1966CT hFE - IC 1000 hFE - IC 1000 DC CURRENT GAIN hFE Ta=100°C DC CURRENT GAIN hFE 100 25 -25 100 Ta=100°C 25 -25 100 COMMON EMITTER VCE = 5V COMMON EMITTER VCE = 5V 10 10 1 10 100 1 10 100 COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) 5 2009-04-14 RN1961CT~RN1966CT (Q1,Q2 common) RN1961CT RN1962CT VCE(sat) - IC COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) COMMON EMITTER IC / IB = 20 Ta=100°C 100 25 -25 COMMON EMITTER IC / IB = 20 100 Ta=100°C 25 -25 10 10 1 10 100 1 RN1963CT RN1964CT VCE(sat) - IC 100 VCE(sat) - IC 1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) 1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) 10 COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) COMMON EMITTER IC / IB = 20 100 Ta=100°C 25 -25 10 COMMON EMITTER IC / IB = 20 100 Ta=100°C 25 -25 10 1 10 100 1 RN1965CT 10 100 COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) RN1966CT VCE(sat) - IC VCE(sat) - IC 1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) 1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) VCE(sat) - IC 1000 1000 COMMON EMITTER IC / IB = 20 100 Ta=100°C 25 -25 10 COMMON EMITTER IC / IB = 20 100 Ta=100°C 25 -25 10 1 10 100 1 10 100 COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) 6 2009-04-14 RN1961CT~RN1966CT Type Name Marking Type name RN1961CT J0 Type name RN1962CT J1 Type name RN1963CT J2 Type name RN1964CT J3 Type name RN1965CT J4 Type name RN1966CT J5 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 7 2009-04-14 RN1961CT~RN1966CT RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 8 2009-04-14