RN1972CT,RN1973CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1972CT,RN1973CT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 １ ２ ３ 0.35±0.02 0.35±0.02 0.075±0.03 0.7±0.03 Complementary to RN2972CT, RN2973CT 0.38 +0.02 -0.03 • ４ 0.05±0.03 Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. ５ 0.6±0.02 • ６ 0.9±0.05 Two devices are incorporated into a fine pitch Small Mold (6 pin) package. 0.2±0.03 • 0.2±0.03 0.15±0.03 Equivalent Circuit 1.EMITTER1 2.EMITTER2 3.BASE2 4.COLLECTOR2 5.BASE1 6.COLLECTOR1 C CST6 B R1 JEDEC ― JEITA ― TOSHIBA E Weight: 1.0 mg (typ.) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 5 V IC 50 mA PC(Note 1) 140 mW Tj 150 °C Tstg −55 to 150 °C Collector current Collector power dissipation Junction temperature Storage temperature range 2-1K1A Equivalent Circuit (top view) 6 5 Q2 Q1 1 4 2 3 Note 1: Total rating Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-05-11 RN1972CT,RN1973CT Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 20 V, IE = 0 ⎯ ⎯ 100 nA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ⎯ ⎯ 100 nA DC current gain hFE VCE = 5 V, IC = 1 mA 300 ⎯ ⎯ Collector-emitter saturation voltage Collector output capacitance Input resistor RN1972CT RN1973CT VCE (sat) Cob IC = 5 mA, IB = 0.25 mA ⎯ 0.15 V VCB = 10 V, IE = 0, f = 1 MHz ⎯ 1.2 ⎯ pF 17.6 22 26.4 37.6 47 56.4 ⎯ R1 2 kΩ 2009-05-11 RN1972CT,RN1973CT RN1112CT RN1972CT RN1972CT RN1112CT IC - VI(ON) Ta=100°C 10 25 1 -25 EMITTER COMMON VCE=0.2V 0.1 0.1 1000 Ta=100°C 25 -25 100 EMITTER COMMON VCE=5V 10 1 10 INPUT VOLTAGE VI(ON) (V) RN1113CT RN1973CT 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 INPUT VOLTAGE VI(OFF) (V) IC - VI(ON) RN1113CT RN1973CT 100 IC - VI(OFF) 10000 10 COLLECTOR CURRENT IC (μA) COLLECTOR CURRENT IC (mA) IC - VI(OFF) 10000 COLLECTOR CURRENT IC (μA) COLLECTOR CURRENT IC (mA) 100 Ta=100°C 25 1 -25 EMITTER COMMON VCE=0.2V 0.1 Ta=100°C 1000 -25 100 25 EMITTER COMMON VCE=5V 10 0.1 1 10 100 0 INPUT ON VOLTAGE VI(ON) (V) 0.2 0.4 0.6 0.8 1 1.2 1.4 INPUT ON VOLTAGE VI(OFF) (V) 3 2009-05-11 RN1972CT,RN1973CT RN1112CT RN1972CT hFE - IC RN1972CT RN1112CT Ta=100°C 100 25 -25 100 EMITTER COMMON VCE=5V 10 0.1 1 10 Ta=100°C 10 25 -25 1 0.1 100 COLLECTOR CURRENT IC (mA) hFE - IC RN1113CT RN1973CT COLLECTOR - EMITTER SATURATION VOLTAGE VCE(sat) (mV) 1000 1000 DC CURRENT GAIN hFE VCE(sat) - IC 1000 COLLECTOR - EMITTER SATURATION VOLTAGE VCE(sat) (mV) DC CURRENT GAIN hFE 1000 Ta=100°C 25 -25 100 EMITTER COMMON VCE=5V 10 0.1 1 10 1 10 COLLECTOR CURRENT IC (mA) RN1113CT RN1973CT 100 VCE(sat) - IC 100 Ta=100°C 10 -25 25 EMITTER COMMON IC / IB=20 1 0.1 100 EMITTER COMMON IC / IB=20 1 10 100 COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) 4 2009-05-11 RN1972CT,RN1973CT Type Name Marking Type name RN1972CT JH Type name RN1973CT JJ Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 5 2009-05-11 RN1972CT,RN1973CT RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. 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