Ordering number : ENA2127 Thick-Film Hybrid IC STK621-033N-E 3-phase Inverter Motor Drive Inverter Hybrid IC Overview This IC is a 3-phase inverter power hybrid IC containing power elements (IGBT and FRD), pre-driver, as well as protection circuit in one package. Application • 3-phase inverter motor drive Features • Integrates power elements (IGBT and FRD), pre-driver, and protective circuit. • Protective circuits including overcurrent (bus line), pre-drive low voltage protection are built in. • Direct input of CMOS level control signals without an insulating circuit (photocoupler, etc) is possible. • Built-in simultaneous upper/lower ON prevention circuit to prevent arm shorting through simultaneous ON input for the upper and lower side transistors. (Dead time is required for preventing shorting due to switching delay.) • The level of the overcurrent protection current is programmable with the external resistance RSD between the ISD and VSS terminals. (It is necessary to connect RSD to ensure normal operation of the overcurrent protection function. ISD = 21A to 28A when RSD = 0Ω) • SIP (The single in-line package) of the transfer full mold structure. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. 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O0312HKPC 013-11-0009 No.A2127-1/8 STK621-033N-E Specifications Absolute Maximum Ratings at Tc = 25°C Parameter Symbol Conditions Ratings unit VCC + - −, surge < 500V *1 450 Collector-emitter voltage VCE + - U (V, W) or U (V, W) - − 600 V Output current IO +, −, U, V, W terminal current ±15 A Output peak current Iop +, −, U, V, W terminal current PW = 100μs ±30 A Pre-driver supply voltage VD1, 2, 3, 4 VB1 - U, VB2 - V, VB3 - W, VDD - VSS *2 20 V Input signal voltage VIN HIN1, 2, 3, LIN1, 2, 3 terminal 0 to 7 V FAULT terminal voltage VFAULT FAULT terminal 20 V Maximum loss Pd Per 1 channel 24 W Junction temperature Tj IGBT, FRD junction temperature Storage temperature Tstg Operating temperature TC H-IC case temperature Vis 50Hz sine wave AC 1 minute *4 Supply voltage Tightening torque Withstand voltage A screw part at use M3 type screw *3 V 150 °C -40 to +125 °C -20 to +100 °C 1.0 2000 N•m VRMS In the case without the instruction, the voltage standard is - terminal = VSS terminal voltage. *1 Surge voltage developed by the switching operation due to the wiring inductance between the + and – terminals. *2 VD1 = between VB1-U, VD2 = VB2-V, VD3 = VB3-W, VB4 = VDD-VSS, terminal voltage. *3 Flatness of the heat-sink should be lower than 0.15mm. *4 The test condition is AC 2500V, 1 second. Electrical Characteristics at Tc=25°C, VD=15V Test Parameter Symbol Conditions Circuit Ratings min typ unit max Power output part Collector-to-emitter cut-off current ICE VCE = 600V Collector-to-emitter saturation voltage VCE (SAT) IO = 15A Fig.1 Lower side Diode forward voltage VF IO = -15A Fig.2 Upper side Lower side Junction-to-substrate thermal resistance 0.5 Upper side Fig.3 mA 2.2 2.9 V 2.6 3.3 V 1.9 2.7 V 2.2 3.0 V θj-c (T) IGBT 5.0 °C/W θj-c (D) FWD 7.3 °C/W ID VD1, 2, 3 = 15V Control (Pre-driver) part Pre-drive power supply consumption electric current VD4 = 15V Input ON voltage VIH Output ON Input OFF voltage VIL Output OFF Over-current protection electric current ISD PW = 100μs, RDS = 0Ω Pre-drive low voltage protection UVLO Fault terminal input electric current IOSD Fault clearness delay time FLTCLR Fig.4 0.07 0.4 3.5 7 0.8 3.0 mA V V Protection part Fig.5 tON ISO A V 2.0 After each protection IO = 15A, Inductive load tOFF Electric current output signal level 28 12 VFault = 0.1V 18 operation ending Switching time 21 10 Fig.6 IO = 15A mA 80 ms 0.7 μs 1.2 μs 0.45 V In the case without the instruction, the voltage standard is - terminal = VSS terminal voltage. No.A2127-2/8 STK621-033N-E Notes 1. Input ON voltage indicates a value to turn on output stage IGBT. Input OFF voltage indicates a value to turn off output stage IGBT. At the time of output ON, set the input signal voltage 0V to VIH (MAX). At the time of output OFF, set the input signal voltage VIL (MIN) to 5V. 2. When the internal protection circuit operates, there is a Fault signal ON (When the Fault terminal is low level, Fault signal is ON state : output form is open DRAIN) but the Fault signal doesn't latch. After protection operation ends, it returns automatically within about 18ms to 80ms and resumes operation beginning condition. So, after Fault signal detection, set OFF (HIGH) to all input signals at once. However, the operation of pre-drive power supply low voltage protection (UVLO: it has a hysteresis about 0.3V) is as follows. Upper side → There is no Fault signal output, but it does a corresponding gate signal OFF. Incidentally, it returns to the regular operation when recovering to the normal voltage, but the latch continues among input signal ON (LOW). Lower side → It outputs Fault signal with gate signal OFF. However, it is different from the protection operation of upper side, it is automatically resets about 18ms to 80ms later and resumes operation beginning condition when recovering to normal voltage. (The protection operation doesn't latch by the input signal.) 3. When assembling the hybrid IC on the heat sink with M3 type screw, tightening torque range is 0.8N•m to 1.0N•m. Flatness of the heat-sink should be lower than 0.15mm. 4. The pre-drive low voltage protection is the feature to protect a device when the pre-driver supply voltage declines with the operating malfunction. As for the pre-driver supply voltage decline in case of operation beginning, and so on, we request confirmation in the set. Package Dimensions unit:mm (typ) 2.5 (10.9) R1.7 0.5 23 2.0 5.0 2.0 0.6 0.5 1 21.8 3.4 56.0 3.2 6.7 22 2.0=44.0 50.0 2.0 5.0 46.2 62.0 No.A2127-3/8 STK621-033N-E Internal Equivalent Circuit Diagram VB1(7) U(8) VB2(4) V(5) VB3(1) W(2) U.V. U.V. U.V. +(10) Shunt Resistor -(12) Level Shifter Level Shifter Level Shifter HIN1(13) HIN2(14) HIN3(15) Logic Logic Logic LIN1(16) LIN2(17) LIN3(18) FAULT(19) ISO(20) Latch VDD(21) Latch time about 18ms to 80ms (Automatic reset) Over-Current VSS(22) VDD-Under Voltage ISD(23) No.A2127-4/8 STK621-033N-E Test Circuit (The tested phase : U+ shows the upper side of the U phase and U- shows the lower side of the U phase.) Fig 1: ICE U+ V+ W+ U- V- W- M 10 10 10 8 5 2 N 8 5 2 12 12 12 ICE 7 VD1=15V A M 8 4 VD2=15V 5 VCE 1 VD3=15V 2 21 VD4=15V N 22 Fig 2: VCE(SAT) M U+ V+ W+ U- V- W- 10 10 10 8 5 2 N 8 5 2 12 12 12 m 13 14 15 16 17 18 7 VD1=15V M 8 4 VD2=15V 5 IO V 1 VD3=15V VCE(SAT) 2 21 VD4=15V m 22 N 23 Fig 3: VF U+ V+ W+ U- V- M 10 10 10 8 5 2 N 8 5 2 12 12 12 M W- V VF IO N Fig 4: ID ID VD1 VD2 VD3 VD4 m 7 4 1 21 n 8 5 2 22 A m VD* n No.A2127-5/8 STK621-033N-E Fig 5: ISD 7 VD1=15V Input signal 2 8 4 VD2=15V 5 1 VD3=15V ISD IO 2 IO 21 VD4=15V 100μS Input signal 16 22 12 23 Fig 6: Switching Time Input signal (0 to 5V) 7 VD1=15V 10 8 4 VD2=15V 2 5 90% 1 VD3=15V IO VCC CS 2 10% 21 VD4=15V tON tOFF Input signal 16 22 IO 12 23 Example of the application circuit 5 CB DB ⋅ CB DB ⋅ CB DB 10 ⋅ ISD VDD VSS ISO FAULT LIN3 LIN2 LIN1 HIN3 HIN2 HIN1 2 - 1 + W ⋅ 4 VB3 8 V U 7 VB2 VB1 STK621-033-E 12 13 14 15 16 17 18 19 20 21 22 23 CS RB RSD M + - VCC CI Control Logic VDD=15V CD No.A2127-6/8 STK621-033N-E Recommendation Operating Conditions Parameter Symbol Conditions Supply voltage VCC +-− Pre-driver supply voltage VD1, 2, 3 min typ max unit 0 280 400 VB1 - U, VB2 - V, VB3 - W 12.5 15 17.5 VD4 VDD - VSS *1 13.5 15 16.5 Input ON voltage VIN(ON) HIN1, HIN2, HIN3, Input OFF voltage VIN(OFF) LIN1, LIN2, LIN3 Terminal PWM frequency fPWM Dead time DT Upper/lower input signal downtime Tightening torque MT ‘M3’ Type Screw V V 0 0.3 3.5 5 1 10 kHz 1.0 N•m μs 2 0.8 V *1. Pre-driver power supply (VD4 = 15±1.5V) must have the capacity of IO = 20mA (DC), 0.5A (Peak). Usage Precaution 1. By the addition of the diode for the bootstrap (DB : high speed type of trr 100ns or less, withstand voltage equal to or more than 600V) and of the capacitor (CB : about 1 to 47μF), a single power supply drive is enabled. In this case, it makes a lower side IGBT ON (input signal of lower side makes LOW). Then it charges in CB. Incidentally, in case of start-up and so, when the voltage of CB is low, the big charging electric current flows and sometimes becomes the cause which exerts a bad influence of noise and so on. Put limitation resistor RB (Several Ω to about tens of Ω). (When not using the bootstrap circuit, each upper side pre-drive power supply needs an external independent power supply.) Also, the upper side power supply voltage sometimes declines by the way of controlling. Please confirm. 2. Because the jump voltage which is accompanied by the vibration in case of switching operation occurs by the influence of the floating inductance of the wiring of the outer power supply which is connected with of the + terminal and the – terminal, restrains and spares serge voltage being as the connection of the snubber circuit (Capacitor/CS/about 0.22 - 10μF) for the voltage absorption with the neighborhood as possible between + and the – terminal, and so on, with making a wiring length (among the terminals each from CI) short and making a wiring inductance small. 3. ISO terminal (20pin) is for the electric current monitor. When the pull up with the resistance,use above 5.6kΩ Be careful, because the overcurrent protection does not operate when short-circuiting in the ISO terminal and the VSS terminal. 4. Output form of the FAULT terminal is open DRAIN (it is operating as FAULT when becoming LOW). When the pull up with the resistance, use above 5.6kΩ. 5. Zener diode with 5V (5.0 - 5.4V) is connected with the inside of the signal input terminal.When inputting the voltage which exceeds 5V,connect resistor to between the side of the power and the signal input terminal,for the input current of the signal input terminal become equal to or less than 0.5mA. This resistor is effective with the noise absorption of the signal terminal,too. 6. The overcurrent protection feature operates only when it is possible to do a circuit control normally. For the safety, put a fuse, and so on in the VCC line. 7. Because the IC sometimes destroys and bursts when motor connection terminal (2pin, 5pin, 8pin) becomes open while the motor turns, especially, be careful of the connection ( the soldering condition ) of this terminal. 8. The over current protection feature operates normally when an external resistor RSD is connected between the ISD and Vss terminals. Be sure to connect this resistor. The Level of the overcurrent protection current is variable according to the RSD value.Select an RSD resistor of an optimum value while referring to the formula shown on a separate sheet and connect it between the ISD and VSS terminals. 9. If - terminal and VSS terminal are short-circuited, since an over-current protection (ISD) value will become lower than the inside setting value of HIC, please do not connect externally. (–terminal and VSS terminal are connected inside HIC) This data shows the example of the application circuit, does not guarantee a design as the mass production set. No.A2127-7/8 STK621-033N-E SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. 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Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of October, 2012. Specifications and information herein are subject to change without notice. PS No.A2127-8/8