SINGLE PHASE HALF WAVECURVE 1 =–50 FORWARD RS1A-RS1G RS1J-SR1M CURRENT 25°C f4= 1 MHz TEMPERATURE (℃) 1FIG. 25TJAMBIENT 75 10 100 20DERATING 125 15060Hz 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 0.8 HYESD1025QG 2 Channel Low Capacitance ESD Protection Diode Array HYESD1025QG is a 2-channel ultra low capacitance rail clamp ESD protection diode array which includes surge rated to protect high speed data lines. Each channel consists of a pair of ESD diodes that steer positive or negative rail. Typical application, the negative rail pin is connected with the ground of the circuit protected. The Positive ESD current is steered to the ground through internal zener diode to protect the power supply of the circuit protected. FEATURES APPLICATION • 2 Channel ESD protection for high speed data line • HDMI / DVI ports • Provides ESD protection to IEC61000-4-2 level 4 • Display port - + 15KV Air Discharge • USB 2.0 interface protection - + 10KV Contact Discharge • Flat panel Monitors / TVs • Set-top box • PCI Express / Serial ATA • Ultra low capacitance - I/O to GND : 1.4pF ( Max ) - I/O to I/O : 0.7pF ( Max ) • Low clamping voltage & 5V operation voltage MECHANICAL INFORMATION • Case : SOT-143 4L Package • Pb-Free, Halogen Free, RoHS/WEEE Complian HYESD1025QG SOT-143 4L PIN CONFIGURATION VDD I/O 2 4 3 1 2 GND I/O 1 REV. 0.9, 15-May-2012 HYESD1025QG Maximum Rating and Thermal Characteristics ( TC=25℃ ) Parameter Symbol Value Unit Peak Pulse Power(8/20μs) PPP 150 W Peak Pulse Current(8/20μs) IPP 5 A ESD per IEC 61000-4-2(Air) VESD +15KV V ESD per IEC 61000-4-2(Contact) VESD +10KV V Operating Temperature Range Top -55 to +125 ℃ Storage Temperature Range Tstg -55 to +150 ℃ Electrical Characteristics ( TC=25℃, unless otherwise noted ) Parameter Test Condition Min Typ Max Unit - - 5 V IBR =1mA; I/O pin to GND 6 - IR VRWM =5V, T=25°C; I/O pin to GND - - 1 uA VC IPP=1A, tP=8/20us; Positive pulse; Any I/O pin to GND - 8.5 12 V Negative Clamping Voltage VC IPP=1A, tP=8/20us; Negative pulse; Any I/O pin to GND - 1.8 - V Junction Capacitance Between Channel CJ VR=0V, f=1MHz; Between I/O pins - 0.6 0.7 pF Junction Capacitance Between I/O And GND CJ VR=0V, f=1MHz; Any I/O pin to GND - 1.2 1.4 pF Reverse Working Voltage Reverse Breakdown Voltage Reverse Leakage Current Positive Clamping Voltage Symbol VRWM Any I/O pin to GND VBR V REV. 0.9, 15-May-2012