PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20(℃) 125 150 100 175 100V / 125A N-Channel Enhancement Mode MOSFET FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 HY125N10T 100V, RDS(ON)=5.8mW@VGS=10V, ID=40A Features TO-220AB • Low On-State Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current • Specially Desigened for DC-DC Converter, Off-line UPS, Automotive System, Solenoid and Motor Control • In compliance with EU RoHs 2002/95/EC Directives Mechanical Information 1 • Case: TO-220AB Molded Plastic Gate • Terminals : Solderable per MIL-STD-750,Method 2026 3 2 Drain 3 Source 2 1 Marking & Ordering Information TYPE MARKING PACKAGE PACKING HY125N10T 125N10T TO-220AB 50PCS/TUBE Absolute Maximum Ratings (TC=25°C unless otherwise specified ) Parameter Symbol Value Units Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS +20 V ID 120 A IDM 480 A PD 192 1.28 W EAS 1250 mJ TJ, TSTG -55 to +175 ℃ Symbol Value Units Junction-to-Case Thermal Resistance RqJC 0.78 ℃/W Junction-to-Ambient Thermal Resistance RqJA 62.5 ℃/W Continuous Drain Current 1) TC=25℃ Pulsed Drain Current 1) Maximum Power Dissipation Derating Factor TC=25℃ Avalanche Energy with Single Pulse, L=0.3mH Operating Junction and Storage Temperature Range Note : 1. Maximum DC current limited by the package Thermal Characteristics Parameter COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN、FUNCTIONS AND RELIABILITY WITHOUT NOTICE REV.1, 8-May-2012 PAGE.1 HY125N10T Electrical Characteristics ( TC=25, Unless otherwise noted ) Parameter Symbol Test Condition Min. Typ. Max. Units Drain-Source Breakdown Voltage BVDSS VGS=0V、ID=250uA 100 - - V Gate Threshold Voltage VGS(th) VDS=VGS、ID=250uA 2 3 4 V Drain-Source On-State Resistance RDS(ON) VGS=10V、ID=80A - 4.6 5.8 mW Zero Gate Voltage Drain Current IDSS VDS=80V、VGS=0V - - 1 uA Gate Body Leakage Current IGSS VGS=+20V、VDS=0V - - 100 nA - 178 - - 32 - Static Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd - 45 - Turn-On Delay Time td(on) - 31.8 - - 19.2 - - 76 - - 52 - - 9200 - - 680 - Turn-On Rise Time Turn-Off Delay Time tr td(off) Turn-Off Fall Time tf Input Capacitance Ciss VDS=50V，ID=40A VGS=10V VDD=50V，ID=40A VGS=10V，RG=3.6W VDS=30V，VGS=0V f=1.0MHZ nC ns Output Capacitance Coss Reverse Transfer Capacitance Crss - 320 - Gate Resistance Rg - 1.3 - W pF Source-Drain Diode Max. Diode Forwad Voltage IS - - - 120 A Diode Forward Voltage VSD IS=80A、VGS=0V - 0.86 1.4 V Reverse Recovery Time trr - 72 - ns Reverse Recovery Charge Qrr VGS=0V、IS=40A di/dt=100A/us - 210 - uC NOTE : Pulse Test : Pulse Width ≦ 300us, duty cycle ≦ 2% REV.1, 8-May-2012 PAGE.2 HY125N10T Typical Characteristics Curves ( TC=25℃, unless otherwise noted) 8 VGS=10V VGS= 10V~ 8.0V RDS(ON) - On Resistance(mW) ID - Drain-to-Source Current (A) 200 160 7.0V 120 6.0V 80 40 5.0V 0 7 6 5 4 3 0 5 10 15 20 0 20 VDS - Drain-to-Source Voltage (V) 80 100 Fig.2 On-Resistance vs Drain Current 2.2 20 ID =80A RDS(ON) - On-Resistance (Normalized) RDS(ON) - On Resistance(mW) 60 ID - Drain Current (A) Fig.1 Output Characteristric 16 12 8 4 VGS =10 V ID =80A 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0 5 6 7 8 9 -50 10 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (oC) VGS - Gate-to-Source Voltage (V) Fig.3 On-Resistance vs Gate to Source Voltage Fig.4 On-Resistance vs Junction Temperature 12000 12 f = 1MHz VGS = 0V 10000 VGS - Gate-to-Source Voltage (V) C - Capacitance (pF) 40 Ciss 8000 6000 4000 Coss 2000 Crss VDS=50V ID =40A 10 8 6 4 2 0 0 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) Fig.5 Capacitance Characteristic REV.1, 8-May-2012 30 0 40 80 120 160 200 Qg - Gate Charge (nC) Fig.6 Gate Charge Characteristic PAGE.3 HY125N10T Typical Characteristics Curves ( TC=25℃, unless otherwise noted) 1.2 BVDSS - Breakdown Voltage (Normalized) 200 Power Rating 160 120 80 40 ID = 250mA 1.1 1 0.9 0.8 0 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (oC) TJ - Junction Temperature (oC) Fig.8 Breakdown Voltage vs Junction Temperature Fig.7 Power Derating Curve 1000 IS - Source Current (A) VGS = 0V 100 10 TJ = 125oC 25oC 1 -55oC 0.1 0.01 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) Fig.9 Body Diode Forward Voltage Characteristic REV.1, 8-May-2012 PAGE.4