SINGLE PHASE HALF WAVECURVE 1 =–50 FORWARD RS1A-RS1G RS1J-SR1M CURRENT 25°C f4= 1 MHz TEMPERATURE (℃) 1FIG. 25TJAMBIENT 75 10 100 20DERATING 125 15060Hz 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 0.8 HYESD2045FN2 Single Channel Low Capacitance ESD Protection Diode Array HYESD2045FN2 is a single-channel ultra low capacitance rail clamp ESD protection diode array which includes surge rated to protect high speed data lines. Each channel consists of a pair of ESD diodes that steer positive or negative ESD current to either the positive or negative rail. Typical application, the negative rail pin is connected with system ground. The Positive ESD current is steered to the ground through the internal zener diode to protect the power supply of the circuit protected. FEATURES APPLICATION • Single Channel ESD protection • Cellular Handsets & Accessories • Provides ESD protection to IEC61000-4-2 level 4 • Digital Cameras - + 15KV Air Discharge • Flat Panel Monitors / TVs - + 10KV Contact Discharge • Cellular Handsets & Accessories • Ultra low capacitance 0.9pF ( Max ) • Notebooks • Low clamping voltage & 5V operation voltage MECHANICAL INFORMATION • Case : DFN-2-1.0x0.6x0.5 Package • Pb-Free, Halogen Free, RoHS/WEEE Complian HYESD2045FN2 DFN-2 PIN CONFIGURATION 1 2 REV. 0.9, 16-May-2012 HYESD2045FN2 Maximum Rating and Thermal Characteristics ( TC=25℃ ) Parameter Symbol Value Unit Peak Pulse Power(8/20μs) PPP 120 W Peak Pulse Current(8/20μs) IPP 5 A ESD per IEC 61000-4-2(Air) VESD +15KV V ESD per IEC 61000-4-2(Contact) VESD +10KV V Operating Temperature Range Top -55 to +125 ℃ Storage Temperature Range Tstg -55 to +150 ℃ Electrical Characteristics ( TC=25℃, unless otherwise noted ) Parameter Test Condition Min Typ Max Unit VRWM I/O pin to GND - - 5 V IBR =1mA; I/O pin to GND 6 - IR VRWM =5V, T=25°C; I/O pin to GND - - 1 uA VC IPP=1A, tP=8/20us; Positive pulse; I/O pin to GND - 8.5 12 V Negative Clamping Voltage VC IPP=1A, tP=8/20us; Negative pulse; I/O pin to GND - 1.8 - V Junction Capacitance Between I/O And GND CJ VR=0V, f=1MHz; I/O pin to GND - 0.5 0.9 pF Reverse Working Voltage Reverse Breakdown Voltage Reverse Leakage Current Positive Clamping Voltage Symbol VBR V REV. 0.9, 16-May-2012