DTC2059 www.din-tek.jp P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.075 at VGS = - 4.5 V - 6.6a 0.081 at VGS = - 3.6 V - 6a 0.090 at VGS = - 2.5 V - 6a Qg (Typ.) 12.5 nC S D • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Portable Devices - Load Switch - Charger Switch - Battery Switch - DC/DC Converter G D G D S P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Symbol Limit Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ± 12 Parameter TC = 70 °C TA = 25 °C - 6a ID - 6a, b, c - 5.2b, c TA = 70 °C IDM Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C Maximum Power Dissipation TA = 25 °C - 4.8 IS - 1.9b, c 5.7 3 PD W 2.3b, c 1.2b, c TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range A - 20 TC = 25 °C TC = 70 °C V - 6.6 a TC = 25 °C Continuous Drain Current (TJ = 150 °C) Unit - 55 to 150 °C 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. Symbol Typical Maximum t≤5s RthJA 45 55 Steady State RthJF 18 22 Unit °C/W 1 DTC2059 www.din-tek.jp SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA IGSS Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs - 14 ID = - 250 µA VGS(th) Temperature Coefficient V mV/°C 3.2 - 1.4 V VDS = 0 V, VGS = ± 12 V ± 100 nA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 85 °C -5 VDS ≤ - 5 V, VGS = - 4.5 V - 0.6 µA A - 20 VGS = - 4.5 V, ID = - 4.9 A 0.060 0.075 VGS = - 3.6 V, ID = - 4.6 A 0.076 0.081 VGS = - 2.5 V, ID = - 2.0 A 0.083 0.090 VDS = - 10 V, ID = - 4.9 A 16 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 1000 VDS = - 10 V, VGS = 0 V, f = 1 MHz VDS = - 10 V, VGS = - 10 V, ID = - 6.5 A VDS = - 10 V, VGS = - 4.5 V, ID = - 6.5 A td(off) pF 25 38 12.5 19 2 VDD = - 10 V, RL = 1.9 Ω ID ≅ - 5.2 A, VGEN = - 4.5 V, Rg = 1 Ω 0.9 4.6 9.2 25 50 20 40 30 60 tf 12 25 td(on) 10 20 tr td(off) nC 4 f = 1 MHz td(on) tr 225 195 VDD = - 10 V, RL = - 1.9 Ω ID ≅ - 5.2 A, VGEN = - 10 V, Rg = 1 Ω tf 10 20 27 55 12 25 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C -6 - 20 IS = - 5.2 A, VGS = 0 V IF = - 5.2 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.8 - 1.2 V 20 40 ns 10 20 nC 10 10 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 DTC2059 www.din-tek.jp TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 5 V GS = 5 V thru 3 V V GS = 2.5 V 4 ID - Drain Current (A) ID - Drain Current (A) 16 12 V GS = 2 V 8 3 2 T C = 25 °C 4 1 T C = 125 °C V GS = 1.5 V 0 T C = - 55 °C 0 0 0.5 1.0 1.5 2.0 2.5 0 3.0 0.5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.0 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Output Characteristics 0.08 1800 V GS = 2.5 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 1500 0.06 0.04 V GS = 3.6 V V GS = 4.5 V 0.02 1200 Ciss 900 600 Coss Crss 300 0 0 0 4 8 16 12 20 0 3 ID - Drain Current (A) 9 12 Capacitance On Resistance vs. Drain Current 1.6 10 ID = 6.5 A V GS = 4.5 V; 3.6 V; I D = 4.9 A 1.4 V DS = 10 V 6 V DS = 5 V V DS = 16 V 4 (Normalized) 8 RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 6 VDS - Drain-to-Source Voltage (V) 1.2 V GS = 2.5 V; I D = 2 A 1.0 0.8 2 0 0 5 10 15 20 Qg - Total Gate Charge (nC) Gate Charge 25 30 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 3 DTC2059 www.din-tek.jp TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.12 100 ID = 4.9 A RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.10 T J = 150 °C 10 T J = 25 °C 1 0.08 0.06 T J = 125 °C 0.04 T J = 25 °C 0.02 0 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Forward Diode Voltage vs. Temperature On-Resistance vs. Gate-to-Source Voltage 1.2 50 1.1 40 1.0 30 Power (W) VGS(th) (V) ID = 250 μA 0.9 0.8 20 0.7 10 0.6 0.5 - 50 - 25 0 25 50 75 100 125 0 10-3 150 10-2 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 Limited by RDS(on) * ID - Drain Current (A) 10 1 ms 1 10 ms 100 ms 1s 10 s DC 0.1 TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 4 10-1 100 100 600 DTC2059 www.din-tek.jp TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 12 6 5 4 Power (W) ID - Drain Current (A) 9 Package Limited 6 3 2 3 1 0 0 0 25 50 75 100 125 150 25 50 75 100 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 125 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 5 DTC2059 www.din-tek.jp TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 95 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 6 1 10 3DFNDJH,QIRUPDWLRQ www.din-tek.jp Package outline - SOT89 D A C D1 E H E1 L B e B1 DIM e1 Millimeters Inches Min Max Min Max A 1.40 1.60 0.550 0.630 B 0.44 0.56 0.017 B1 0.36 0.48 C 0.35 D D1 DIM Millimeters Min Max Min Max E 2.29 2.60 0.090 0.102 0.022 E1 2.13 2.29 0.084 0.090 0.014 0.019 e 1.50 BSC 0.059 BSC 0.44 0.014 0.017 e1 3.00 BSC 0.118 BSC 4.40 4.60 0.173 0.181 H 3.94 4.25 0.155 0.167 1.62 1.83 0.064 0.072 L 0.89 1.20 0.035 0.047 Note: Controlling dimensions are in millimeters. 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