DTM4485 www.din-tek.jp P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.042 at VGS = - 10 V -6 0.072 at VGS = - 4.5 V -6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 7 nC APPLICATIONS • Load Switch • Notebook Adaptor Switch S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS ± 20 TC = 70 °C - 6e ID TA = 25 °C - 5.9b, c - 4.7b, c TA = 70 °C Pulsed Drain Current Continous Source-Drain Diode Current Maximum Power Dissipation IDM TC = 25 °C - 25 - 2b, c TC = 25 °C 5 TC = 70 °C 3.2 PD TA = 25 °C A - 4.2 IS TA = 25 °C W 2.4b, c 1.5b, c TA = 70 °C Operating Junction and Storage Temperature Range V - 6e TC = 25 °C Continuous Drain Current (TJ = 150 °C) Unit TJ, Tstg °C - 55 to 150 THERMAL RESISTANCE RATINGS Symbol Typical Maximum Maximum Junction-to-Ambientb, d Parameter t ≤ 10 s RthJA 42 53 Maximum Junction-to-Foot (Drain) Steady State RthJF 19 25 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. e. Package Limited. 1 DTM4485 www.din-tek.jp SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ V - 19 ID = - 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = - 250 µA - 2.5 V IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 55 °C -5 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS ≤ - 5 V, VGS = - 10 V 4.4 - 1.2 - 25 µA A VGS = - 10 V, ID = - 5.9 A 0.035 0.042 VGS = - 4.5 V, ID = - 4.5 A 0.060 0.072 VDS = - 15 V, ID = - 5.9 A 10 VDS = - 15 V, VGS = 0 V, f = 1 MHz 115 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 590 VDS = - 15 V, VGS = - 10 V, ID = - 5.9 A td(off) 13.6 21 7 11 2.3 VDS = - 15 V, VGS = - 4.5 V, ID = - 5.9 A VDD = - 15 V, RL = 3.2 Ω ID ≅ - 4.7 A, VGEN = - 4.5 V, Rg = 1 Ω 1 5 10 30 45 25 38 16 24 tf 8 16 td(on) 8 16 10 20 tr td(off) nC 3.2 f = 1 MHz td(on) tr pF 93 VDD = - 15 V, RL = 3.2 Ω ID ≅ - 4.7 A, VGEN = - 10 V, Rg = 1 Ω tf 18 27 8 16 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C - 4.2 - 25 IS = - 4.7 A, VGS = 0 V IF = - 4.7 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.8 - 1.2 V 17 26 ns 9 18 nC 10 7 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 DTM4485 www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 25 3.0 VGS = 5 V VGS = 10 V thru 6 V 2.4 I D - Drain Current (A) I D - Drain Current (A) 20 15 VGS = 4 V 10 1.8 1.2 TC = 25 °C 5 0.6 VGS = 3 V TC = 125 °C TC = - 55 °C 0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 3 4 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.10 1000 0.08 800 VGS = 4.5 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 2 0.06 VGS = 10 V 0.04 Ciss 600 400 0.02 Coss 200 Crss 0.00 0 0 5 10 15 20 25 0 10 15 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 20 1.7 10 ID = 5.9 A ID = 5.9 A VDS = 15 V 1.5 VDS = 8 V 6 VDS = 24 V 4 VGS = 10 V (Normalized) 8 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 5 1.3 VGS = 4.5 V 1.1 0.9 2 0 0 3 6 9 Qg - Total Gate Charge (nC) Gate Charge 12 15 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 3 DTM4485 www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.10 100 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 5.9 A TJ = 150 °C 10 TJ = 25 °C 1 0.08 0.06 TJ = 125 °C 0.04 TJ = 25 °C 0.02 0.1 0.0 0.3 0.6 0.9 1.2 2 1.5 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 30 2.2 25 2.0 Power (W) VGS(th) (V) 20 1.8 ID = 250 µA 1.6 15 10 1.4 1.2 - 50 5 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 TJ - Temperature (°C) 100 Limited by RDS(on)* I D - Drain Current (A) 10 100 1000 Single Pulse Power (Junction-to-Ambient) Threshold Voltage 10 100 µs 1 ms 1 10 ms 100 ms 1s 10 s 0.1 BVDSS Limited TA = 25 °C Single Pulse 0.01 0.1 1 DC 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 4 1 Time (s) 100 DTM4485 www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 I D - Drain Current (A) 8 Package Limited 6 4 2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 6 2.0 5 1.5 Power (W) Power (W) 4 3 1.0 2 0.5 1 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Foot Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 5 DTM4485 www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 70 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 4. Surface Mounted 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 6 1 10 Package Information www.din-tek.jp SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 1 Application Note www.din-tek.jp RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index 1 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Legal Disclaimer Notice Disclaimer www.din-tek.jp ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Din-Tek makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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