DTL40P03 www.din-tek.jp P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0055 at VGS = - 10 V - 40d 0.0090 at VGS = - 4.5 V - 40d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100% Rg Tested • 100% UIS Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 49.5 nC TO-251 S APPLICATIONS • Notebook Computer - Adaptor Switch - Battery Switch - Load Switch G D G D S Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit - 30 ± 20 - 40 - 40d - 22.4a, b - 17.9a, b - 70 - 40d ID Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD - 4.5a, b - 30 45 48 30 5.0a, b 3.2a, b - 55 to 150 260 TJ, Tstg Operating Junction and Storage Temperature Range V d IDM Pulsed Drain Current Unit Soldering Recommendations (Peak Temperature)e, f A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Case t ≤ 10 s Steady State Symbol RthJA RthJC Typical 20 2.1 Maximum 25 2.6 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 70 °C/W. d. Package limited. 1 DTL40P03 www.din-tek.jp SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = - 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 25 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time tr mV/°C 5.2 - 1.2 - 2.5 V ± 100 nA VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 55 °C -5 VDS ≥ - 10 V, VGS = - 10 V VGS = - 10 V, ID = - 15 A - 50 0.0055 VGS = - 4.5 V, ID = - 10 A 0.0074 0.0090 VDS = - 10 V, ID = - 15 A 54 4230 VDS = - 15 V, VGS = 0 V, f = 1 MHz 695 pF 670 VDS = - 15 V, VGS = - 10 V, ID = - 10 A VDS = - 15 V, VGS = - 4.5 V, ID = - 10 A 97 146 49.5 74.5 11.7 nC 22.6 f = 1 MHz VDD = - 15 V, RL = 1.5 Ω ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω 0.4 1.6 3.2 17 34 12 24 56 110 tf 12 24 70 140 58 115 tr Ω S td(on) td(off) µA A 0.0042 td(on) td(off) V - 19 VDD = - 15 V, RL = 1.5 Ω ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω tf 47 90 24 48 Ω ns Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C - 40 - 70 IS = - 3 A, VGS = 0 V IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.72 - 1.1 V 30 60 ns 22 45 nC 14 16 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 DTL40P03 www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 80 10 VGS = 10 V thru 4 V 8 I D - Drain Current (A) I D - Drain Current (A) 64 48 32 6 4 TC = 25 °C VGS = 3 V 16 2 TC = 125 °C TC = - 55 °C 0 1.0 0.5 1.5 2.0 2.5 0 1 2 4 3 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.012 6500 0.010 5200 VGS = 4.5 V 0.008 0.006 VGS = 10 V 5 Ciss C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0 0.0 3900 2600 0.004 1300 Coss Crss 0.002 0 0 14 28 42 56 70 0 6 24 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 10 1.7 ID = 15 A ID = 10 A 8 1.5 VDS = 15 V 6 VDS = 10 V VDS = 20 V 4 2 VGS = 10 V (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 18 12 1.3 VGS = 4.5 V 1.1 0.9 0 0 20 40 60 Qg - Total Gate Charge (nC) Gate Charge 80 100 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 3 DTL40P03 www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.030 10 0.024 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 15 A TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.018 0.012 TJ = 125 °C 0.006 TJ = 25 °C 0.001 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 VSD - Source-to-Drain Voltage (V) 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.8 200 160 0.5 ID = 250 µA ID = 5 mA Power (W) VGS(th) Variance (V) 3 0.2 120 80 - 0.1 40 - 0.4 - 50 0 - 25 0 25 50 75 100 125 150 0.001 0.01 TJ - Temperature (°C) 100 Limited by RDS(on)* 10 I D - Drain Current (A) 1 10 Single Pulse Power, Junction-to-Ambient Threshold Voltage 1 ms 10 ms 100 ms 1 1s 10 s 0.1 DC TA = 25 °C Single Pulse 0.01 0.01 0.1 BVDSS Limited 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 4 0.1 Time (s) 100 DTL40P03 www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 80 I D - Drain Current (A) 64 48 Package Limited 32 16 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 60 2.5 48 2.0 Power (W) Power (W) Current Derating* 36 24 1.5 1.0 0.5 12 0.0 0 0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Case 125 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 5 DTL40P03 www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 70 °C/W 3. TJM - T A = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 6 1 Package Information www.din-tek.jp TOĆ251AA (DPAK) E A L2 b2 Dim A A1 b b1 b2 c c1 D E e L L1 L2 L3 D L3 L1 b1 L b MILLIMETERS c1 e c A1 INCHES Min Max Min Max 2.21 2.38 0.087 0.094 0.89 1.14 0.035 0.045 0.71 0.89 0.028 0.035 0.76 1.14 0.030 0.045 5.23 5.43 0.206 0.214 0.46 0.58 0.018 0.023 0.46 0.58 0.018 0.023 5.97 6.22 0.235 0.245 6.48 6.73 0.255 0.265 2.28 BSC 0.090 BSC 8.89 9.53 0.350 0.375 1.91 2.28 0.075 0.090 0.89 1.27 0.035 0.050 1.15 1.52 0.045 0.060 ECN: S-03946—Rev. E, 09-Jul-01 DWG: 5346 Note: Dimension L3 is for reference only. 1 Legal Disclaimer Notice Disclaimer www.din-tek.jp ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Din-Tek makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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