DTU30N02 www.din-tek.jp N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.015 at VGS = 10 V 30 VDS (V) 20 0.024 at V GS = 4.5 V 30 0.033at V GS = 2.5 V 30 Qg (Typ.) 15.5 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS D TO-252 • DC/DC • Low Voltage Drive • POL G G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit 20 ± 12 ID Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) V 30a 30a 22.6b, c 18.2b, c 70 IDM Pulsed Drain Current Unit A 25a 4.1b, c 20 20 27.7 17.7 mJ 4.6b, c 3.0b, c - 55 to 150 260 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. t ≤ 10 s Steady State Symbol RthJA RthJC Typical 22 3.5 Maximum 27 4.5 Unit °C/W 1 DTU30N02 www.din-tek.jp SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ V 19 ID = 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.5 V IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C 10 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS ≥ 5 V, VGS = 10 V - 4.0 0.6 20 µA A VGS = 10 V, ID = 10 A 0.015 VGS = 4.5 V, ID = 8 A 0.026 VGS = 2.5 V, ID = 6 A 0.036 VDS = 10 V, ID = 10 A 70 0.024 0.033 Ω 0.040 S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 1785 VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 10 V, ID = 10 A tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time VDS = 15 V, VGS = 4.5 V, ID = 10 A nC 3.6 f = 1 MHz VDD = 10 V, RL = 10 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 0.2 0.75 1.5 11 22 11 22 30 55 9 18 td(on) 19 35 14 28 36 65 13 26 td(off) VDD = 10 V, RL = 10 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω tf Fall Time 23.5 3 tf tr Rise Time Turn-Off Delay Time pF 32 15.5 td(on) Turn-On Delay Time 460 210 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 °C 25 ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 70 IS = 5 A IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.71 1.1 V 21 40 ns 10.5 20 nC 11 10 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 DTU30N02 www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 70 10 VGS = 10 V thru 3 V 8 ID - Drain Current (A) ID - Drain Current (A) 56 42 VGS = 2 V 28 14 6 TC = 125 °C 4 TC = 25 °C 2 TC = - 55 °C 0 0.0 0.5 1.0 1.5 2.0 0 0.0 2.5 1.2 0.6 1.8 2.4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.008 2500 0.007 2000 3.0 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) Ciss VGS = 2.5 V 0.006 0.005 VGS = 4.5 V 0.004 1500 Coss 1000 500 VGS = 10 V Crss 0 0.003 0 14 28 56 42 0 70 4 8 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Drain Current and Gate Voltage 10 1.7 ID = 10 A ID = 10 A 8 VGS = 2.5 V 1.5 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 16 12 VDS = 10 V 6 VDS = 5 V VDS = 15 V 4 2 VGS = 10 V 1.3 1.1 0.9 0 0 7 14 21 Qg - Total Gate Charge (nC) Gate Charge 28 35 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 3 DTU30N02 www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.025 100 ID = 10 A TJ = 150 °C 0.020 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 TJ = 25 °C 1 0.1 0.01 0.015 0.010 TJ = 125 °C 0.005 TJ = 25 °C 0.001 0.0 0.000 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 VSD - Source-to-Drain Voltage (V) 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 150 0.3 ID = 250 µA 120 Power (W) V GS(th) Variance (V) 0.1 - 0.1 ID = 5 mA - 0.3 60 30 - 0.5 - 0.7 - 50 90 0 - 25 0 25 50 75 100 125 150 0.001 0.01 TJ - Temperature (°C) 100 Limited by RDS(on)* 10 I D - Drain Current (A) 1 Single Pulse Power, Junction-to-Ambient Threshold Voltage 1 ms 10 ms 100 ms 1 1s 10 s 0.1 DC TA = 25 °C Single Pulse 0.01 0.01 0.1 BVDSS 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 4 0.1 Time (s) 100 10 DTU30N02 www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 ID - Drain Current (A) 48 36 Package Limited 24 12 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 35 2.5 28 2.0 21 1.5 Power (W) Power (W) Current Derating* 14 7 1.0 0.5 0 0.0 0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Case 125 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 5 DTU30N02 www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 70 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 6 1 Package Information www.din-tek.jp TO-252AA CASE OUTLINE E MILLIMETERS A C2 e b2 C A1 D1 e1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 0.265 E 6.35 6.73 0.250 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347 E1 Note • Dimension L3 is for reference only. 1 INCHES DIM. Application Note www.din-tek.jp RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) APPLICATION NOTE 1 Legal Disclaimer Notice www.din-tek.jp Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. 1