DINTEK DTS6504_13

DTS6504
www.din-tek.jp
N-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) ()
ID (A)a, e
0.030 at VGS = 10 V
6
0.040 at VGS = 4.5 V
6
VDS (V)
30
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Low On-Resistance
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
4.2 nC
APPLICATIONS
SOT-363
SC-70 (6-LEADS)
• DC/DC Converters, High Speed Switching
D
1
6
D
D
2
5
D
G
3
4
S
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 20
TC = 70 °C
ID
TA = 25 °C
5.5b, c
4.4b, c
25
TA = 70 °C
Pulsed Drain Current (t = 300 µs)
IDM
TC = 25 °C
Continuous Source-Drain Diode Current
1.1b, c
2.5
TC = 25 °C
TC = 70 °C
Maximum Power Dissipation
1.6
PD
TA = 25 °C
W
1.3b, c
0.8b, c
- 55 to 150
TA = 70 °C
Operating Junction and Storage Temperature Range
A
2.1
IS
TA = 25 °C
V
6e
6e
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
Unit
TJ, Tstg
Soldering Recommendations (Peak Temperature)
°C
260
THERMAL RESISTANCE RATINGS
Symbol
Typical
Maximum
Maximum Junction-to-Ambientb, d
t5s
RthJA
75
100
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
40
50
Parameter
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 166 °C/W.
e. Package limited.
1
DTS6504
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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
30
VDS/TJ
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
Max.
mV/°C
- 4.8
1.2
2.5
V
± 100
nA
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 70 °C
10
VDS 5 V, VGS = 10 V
Unit
V
30
ID = 250 µA
VGS(th) Temperature Coefficient
Typ.
20
µA
A
VGS 10 V, ID = 5.5 A
0.023
0.030
VGS 4.5 V, ID = 5 A
0.027
0.040
VDS = 15 V, ID = 5.5 A
24

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Rg
424
VDS = 15 V, VGS = 0 V, f = 1 MHz
42
VDS = 15 V, VGS = 10 V, ID = 5.5 A
td(off)
8.2
13
4.2
7
1.4
VDS = 15 V, VGS = 4.5 V, ID = 5.5 A
f = 1 MHz
VDD = 15 V, RL = 3.4 
ID  4.4 A, VGEN = 4.5 V, Rg = 1 
2.5
12.6
25.2
6
12
20
30
14
21
tf
10
20
td(on)
3
6
11
20
20
30
7
14
tr
td(off)
nC
1.4
td(on)
tr
pF
100
VDD = 15 V, RL = 3.4 
ID  4.4 A, VGEN = 10 V, Rg = 1 
tf

ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
2.1
25
IS = 4.4 A, VGS 0 V
IF = 4.4 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.82
1.2
V
13
20
ns
6
12
nC
8
5
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
DTS6504
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
5
25
VGS = 10 V thru 4 V
4
ID - Drain Current (A)
ID - Drain Current (A)
20
VGS = 3 V
15
10
TC = 25 °C
2
1
5
TC = 125 °C
TC = - 55 °C
0
0
0
0.5
1
1.5
2
0
0.5
1
1.5
2
2.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
3
600
0.032
VGS = 4.5 V
450
C - Capacitance (pF)
0.028
VGS = 10 V
0.024
0.020
Ciss
300
150
Coss
Crss
0.016
0
0
5
10
15
20
25
0
6
ID - Drain Current (A)
10
18
12
24
30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.7
ID = 5.5 A
RDS(on) - On-Resistance (Normalized)
ID = 5.5 A
VGS - Gate-to-Source Voltage (V)
RDS(on) - On-Resistance (Ω)
3
VDS = 8 V
8
6
VDS = 15 V
VDS = 24 V
4
2
0
0
2
4
6
Qg - Total Gate Charge (nC)
Gate Charge
8
10
1.5
VGS = 10 V, ID = 5.5 A
1.3
1.1
0.9
VGS = 4.5 V, ID = 5 A
0.7
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
3
DTS6504
www.din-tek.jp
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
0.060
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 5.5 A
TJ = 150 °C
1
TJ = 25 °C
0.045
TJ = 125 °C
0.030
TJ = 25 °C
0.015
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
2
8
10
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
10
1.8
8
1.6
ID = 250 μA
1.4
1.2
6
4
2
TA = 25 °C
0
- 25
0
25
50
75
100
125
150
0.01
TJ - Temperature (°C)
10
1
100
1000
Single Pulse Power (Junction-to-Ambient)
100
Limited by RDS(on)*
10
ID - Drain Current (A)
0.1
Time (s)
Threshold Voltage
100 μs
1 ms
1
10 ms
100 ms
0.1
TC = 25 °C
Single Pulse
10 s, 1 s
DC
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
4
6
VGS - Gate-to-Source Voltage (V)
2.0
1.0
- 50
4
VSD - Source-to-Drain Voltage (V)
Power (W)
VGS(th) (V)
0.0
DTS6504
www.din-tek.jp
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
9
ID - Drain Current (A)
7
5
4
2
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
1.0
3.0
2.5
0.8
Power (W)
Power (W)
2.0
1.5
0.6
0.4
1.0
0.2
0.5
0.0
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
5
DTS6504
www.din-tek.jp
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 166 °C/W
3. TJM - TA = PDMZthJA(t)
0.01
10 -4
4. Surface Mounted
Single Pulse
10 -3
10 -2
10 -1
1
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
6
1
10
DTS6504
www.din-tek.jp
SCĆ70:
6ĆLEADS
MILLIMETERS
6
5
Dim
A
A1
A2
b
c
D
E
E1
e
e1
L
4
E1 E
1
2
3
-B-
e
b
e1
D
-Ac
A2 A
L
A1
INCHES
Min
Nom
Max
Min
Nom
Max
0.90
–
1.10
0.035
–
0.043
–
–
0.10
–
–
0.004
0.80
–
1.00
0.031
–
0.039
0.15
–
0.30
0.006
–
0.012
0.10
–
0.25
0.004
–
0.010
1.80
2.00
2.20
0.071
0.079
0.087
1.80
2.10
2.40
0.071
0.083
0.094
1.15
1.25
1.35
0.045
0.049
0.053
0.65BSC
1.20
0.10
0.026BSC
1.30
1.40
0.047
0.20
0.30
0.004
7_Nom
0.051
0.055
0.008
0.012
7_Nom
ECN: S-03946—Rev. B, 09-Jul-01
DWG: 5550
1
DTS6504
www.din-tek.jp
RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead
0.067
APPLICATION NOTE
1
0.026
(0.648)
0.045
0.016
0.026
0.010
(0.406)
(0.648)
(0.241)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
(1.143)
0.096
(2.438)
(1.702)
DTS6504
Disclaimer
www.din-tek.jp
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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Statements regarding the suitability of products for certain types of applications are based on Din-Tek’s knowledge of typical
requirements that are often placed on Din-Tek products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Din-Tek’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
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Material Category Policy
Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
1