AM4960N Analog Power N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOIC-8 saves board space Fast switching speed High performance trench technology PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 89 @ VGS = 10V 60 104 @ VGS = 4.5V SOIC-8 Top View ID (A) ±4.0 ±3.7 D1 G1 S1 1 2 8 7 D1 D1 S2 G2 3 4 6 D2 D2 5 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET o ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Units VDS 60 Drain-Source Voltage V VGS ±20 Gate-Source Voltage o TA=25 C a Continuous Drain Current o TA=70 C b ID IDM Pulsed Drain Current a IS Continuous Source Current (Diode Conduction) o TA=25 C a Power Dissipation o TA=70 C Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta PD t <= 5 sec ±3.3 RθJA A ±25 2 2.1 1.3 TJ, Tstg -55 to 150 Symbol t <= 10 sec ±4.0 Maximum 62.5 110 A W o C Units o C/W C/W o Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM4960_A AM4960N Analog Power o SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions VGS(th) IGSS VDS = VGS, ID = 250 uA Limits Unit Min Typ Max Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS A On-State Drain Current ID(on) A rDS(on) Drain-Source On-Resistance A Forward Tranconductance gfs VSD Diode Forward Voltage A Pulsed Source Current (Body Diode) 1 VDS = 0 V, VGS = 20 V ±100 nA VDS = 60 V, VGS = 0 V 1 10 uA VDS = 60 V, VGS = 0 V, TJ = 55oC VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 4.0 A VGS = 4.5 V, ID = 3.7 A VDS = 15 V, ID = 4.0 A IS = 2.0 A, VGS = 0 V ISM 20 A 89 104 mΩ 11 1.1 S V 5 A b Dynamic Total Gate Charge Qg Gate-Source Charge Gate-Drain Charge Qgs Qgd VDS = 30 V, VGS = 4.5 V, ID = 4.0 A 3.6 1.8 1.3 nC Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time td(on) tr td(off) tf VDD = 30 V, RL = 30 Ω , ID = 1 A, VGEN = 10 V 9 10 21 8 nS Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. 2 PRELIMINARY Publication Order Number: DS-AM4960_A AM4960N Analog Power Typical Electrical Characteristics 10 T A = -55o C 8 15 I - DrainCurrent (A) VGS = 10V 4.5V 10 6 4 D ID - Drain Current (A) 20 25o C 125o C 2 5 0 0 2 0 1 2 3 4 2.5 5 3 V GS 3.5 4 4.5 5 - Ga t e - t o- Sour c e V ol t a ge ( V ) VDS - Drain-to-Source Voltage (V) Transfer Characteristics 600 2 500 1.8 C - Capacitance (pF) r DS(ON), On-Resistance Output Characteristics 2.2 1.6 4.5V 1.4 1.2 10V 1 0.8 0 5 I D 10 400 300 200 100 15 0 0 - D r a i n C ur r e nt ( A ) 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 6 4 2 0 0 3 6 9 2 VGS = 10V 1.6 1.4 1.2 1 0.8 0.6 0.4 12 -50 Q g, Total Gate Charge (nC) -25 0 T Gate Charge J 25 50 75 100 - J unc t i on T e mpe r a t ur e ( o 125 C) On-Resistance vs. Junction Temperature 3 PRELIMINARY I D = 3.6A 1.8 Normalized 8 rDS(ON), - On-Resistance VGS - Gate-to-Source Voltage ( V ) 10 Capacitance Publication Order Number: DS-AM4960_A 150 AM4960N Analog Power Typical Electrical Characteristics 0.1 ID = 3.6 A 10 rDS(ON) - On-Resistance (OHM) IS - Source Current (A) 100 T A= 125 C o 1 0.1 0.01 25o C 0.001 0.08 0.06 0.04 0.02 0.0001 0 0.2 V 0.4 0.6 0.8 1 0 1.2 2 Source-Drain Diode Forward Voltage 6 8 50 2 10 On-Resistance vs. Gate-to-Source Voltage 2.2 SINGLE PULSE RqJA = 125oC/W TA = 25oC 40 ID = -250mA 1.8 30 Power (W) VGS(th)Variance (V) 4 VGS - Gate-to-Source Voltage (V) - Sour c e - t o- D r a i n V OLT A GE ( V ) SD 1.6 1.4 20 10 1.2 0 1 -50 -25 0 25 50 75 100 125 150 0.001 175 0.01 0.1 1 10 100 Time (sec) o TJ - Temperature ( C) Threshold Voltage Thermal Impedance Normalized Effective Transient 1 0.1 Single Pulse Power D = 0.5 0.2 R q J A (t ) = r(t ) + R q J A 0.1 R q J A = 12 5o C / W 0.0 P(p k 0.02 t1 0.01 TJ - TA = P t*2R q J A(t ) Dut y C ycle, D = t 1 / t2 0.01 S INGLE P ULS E 0.001 0.0001 0.001 0.01 0.1 1 Square Wave P uls e Duratio n (s ec) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 4 PRELIMINARY Publication Order Number: DS-AM4960_A AM4960N Analog Power Package Information SO-8: 8LEAD H x 45° 5 PRELIMINARY Publication Order Number: DS-AM4960_A