ONSEMI NYC222STT1G

NYC222STT1G,
NYC226STT1G,
NYC228STT1G
Sensitive Gate
Silicon Controlled Rectifiers
http://onsemi.com
Reverse Blocking Thyristors
SCRs
1.5 AMPERES RMS
400 thru 600 VOLTS
Designed and tested for repetitive peak operation required for CD
ignition, fuel ignitors, flash circuits, motor controls and low-power
switching applications.
Features
•
•
•
•
•
Blocking Voltage to 600 V
High Surge Current − 15 A
Very Low Forward “On” Voltage at High Current
Low-Cost Surface Mount SOT−223 Package
These are Pb−Free Devices
G
A
K
MARKING
DIAGRAM
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Peak Repetitive Off−State Voltage (Note 1)
(RGK = IK, TJ = *40 to +110°C, Sine Wave,
50 to 60 Hz, Gate Open)
NYC222
NYC226
NYC228
VDRM,
VRRM
On-State Current RMS
(180° Conduction Angles, TC = 80°C)
IT(RMS)
1.5
A
ITSM
15
A
I2t
0.9
A2s
PGM
0.5
W
Peak Non-repetitive Surge Current,
@TA = 25°C, (1/2 Cycle, Sine Wave, 60 Hz)
Circuit Fusing Considerations (t = 8.3 ms)
Forward Peak Gate Power
(Pulse Width ≤ 1.0 msec, TA = 25°C)
Forward Average Gate Power
(t = 8.3 msec, TA = 25°C)
Value
V
50
400
600
0.1
W
Forward Peak Gate Current
(Pulse Width ≤ 1.0 ms, TA = 25°C)
IFGM
0.2
A
Reverse Peak Gate Voltage
(Pulse Width ≤ 1.0 ms, TA = 25°C)
VRGM
5.0
V
Operating Junction Temperature Range
@ Rated VRRM and VDRM
TJ
−40 to +110
°C
Storage Temperature Range
Tstg
−40 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
July, 2008 − Rev. 0
AYW
XXXXXG
G
1
PG(AV)
© Semiconductor Components Industries, LLC, 2008
SOT−223
CASE 318E
STYLE 11
Unit
1
A
= Assembly Location
Y
= Year
W
= Work Week
XXXXX = Device Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
1
K (Cathode)
2
A (Anode)
3
G (Gate)
4
A (Anode)
ORDERING INFORMATION
Shipping†
Device
Package
NYC222STT1G
SOT−223
(Pb−Free)
1000 /Tape & Reel
NYC226STT1G
SOT−223
(Pb−Free)
1000 /Tape & Reel
NYC228STT1G
SOT−223
(Pb−Free)
1000 /Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NYC222/D
NYC222STT1G, NYC226STT1G, NYC228STT1G
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient PCB Mounted
Characteristic
RqJA
156
°C/W
Thermal Resistance, Junction−to−Tab Measured on MT2 Tab Adjacent to Epoxy
RqJT
25
°C/W
TL
260
°C
Maximum Device Temperature for
Soldering Purposes for 10 Secs Maximum
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
−
−
−
−
10
200
mA
mA
VTM
−
1.2
1.7
V
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM/VRRM; RGK = 1000 W)
TC = 25°C
TC = 110°C
IDRM, IRRM
ON CHARACTERISTICS
Peak Forward On−State Voltage (Note 2)
(ITM = 2.2 A Peak)
Gate Trigger Current (dc) (Note 3)
(VAK = 7 Vdc, RL = 100 W)
TC = 25°C
TC = −40°C
IGT
−
−
30
−
200
500
mA
Gate Trigger Voltage (dc) (Note 3)
(VAK = 7 Vdc, RL = 100 W)
TC = 25°C
TC = −40°C
VGT
−
−
−
−
0.8
1.2
V
Gate Non−Trigger Voltage
(VAK = VDRM, RL = 100 W)
TC = 110°C
VGD
0.1
−
−
V
Holding Current
(VAK = 12 V, RGK = 1000 W)
Initiating Current = 200 mA
TC = 25°C
TC = −40°C
−
−
2.0
−
5.0
10
−
25
−
IH
mA
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(TC = 110°C)
dv/dt
V/ms
2. Pulse Width = 1.0 ms, Duty Cycle v 1%.
3. RGK Current not included in measurement.
Voltage Current Characteristic of SCR
+ Current
Symbol
Parameter
Anode +
VTM
VDRM
Peak Repetitive Off State Forward Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Off State Reverse Voltage
IRRM
Peak Reverse Blocking Current
VTM
Peak on State Voltage
IH
Holding Current
on state
IRRM at VRRM
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode −
http://onsemi.com
2
IH
+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)
NYC222STT1G, NYC226STT1G, NYC228STT1G
TA , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( °C)
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C)
CURRENT DERATING
140
100
a = 180°
a = CONDUCTION
ANGLE
60
dc
20
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IT(AV), AVERAGE ON‐STATE CURRENT (AMPS)
120
100
80
60
dc
40
a = 180°
a = CONDUCTION ANGLE
20
0
0
0.2
0.4
3.0
TJ = 110°C
25°C
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0
0.5
0.8
Figure 2. Maximum Ambient Temperature
5.0
2.0
0.6
IT(AV), AVERAGE ON‐STATE CURRENT (AMP)
Figure 1. Maximum Case Temperature
I T, INSTANTANEOUS ON‐STATE CURRENT (AMP)
0
140
1.0
1.5
2.0
VT, INSTANTANEOUS ON‐STATE VOLTAGE
(VOLTS)
Figure 3. Typical Forward Voltage
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3
2.5
1.0
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
NYC222STT1G, NYC226STT1G, NYC228STT1G
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1000
2000
5000
1000
t, TIME (ms)
Figure 4. Thermal Response
TYPICAL CHARACTERISTICS
100
I GT GATE TRIGGER CURRENT ( μA)
VAK = 7.0 V
RL = 100
0.7
0.6
0.5
0.4
0.3
-75
-50
-25
0
25
50
75
100 110
50
30
20
10
5.0
3.0
2.0
1.0
-40
-20
0
20
60
80
100 110
TJ JUNCTION TEMPERATURE (°C)
Figure 5. Typical Gate Trigger Voltage
Figure 6. Typical Gate Trigger Current
2.0
10
1.8
I H , HOLDING CURRENT (mA)
40
TJ, JUNCTION TEMPERATURE (°C)
P(AV) MAXIMUM AVERAGE POWER DISSIPATION (WATTS)
VGT, GATE TRIGGER VOLTAGE (VOLTS)
0.8
1.6
VAK = 12 V
RL = 100 W
30°
1.4
5.0
60°
90°
180°
120
°
1.2
1.0
dc
0.8
0.6
2.0
0.4
0.2
1.0
-40
-20
0
20
40
60
80
100 110
0
0
0.2
0.4
0.6
0.8
1.0
1.2
TJ, JUNCTION TEMPERATURE (°C)
IT(AV), AVERAGE ON‐STATE CURRENT (AMPS)
Figure 7. Typical Holding Current
Figure 8. Power Dissipation
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4
1.4
1.6
NYC222STT1G, NYC226STT1G, NYC228STT1G
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE M
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
HE
E
1
2
3
b
e1
e
0.08 (0003)
C
q
A
A1
L1
DIM
A
A1
b
b1
c
D
E
e
e1
L1
HE
q
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
1.50
6.70
0°
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
1.75
2.00
7.00
7.30
10°
−
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.060
0.264
0°
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
0.069
0.276
−
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
0.078
0.287
10°
STYLE 11:
PIN 1. MT 1
2. MT 2
3. GATE
4. MT 2
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent
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MCR22−6/D