2N6400 Series Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half−wave silicon gate−controlled, solid−state devices are needed. http://onsemi.com Features SCRs 16 AMPERES RMS 50 thru 800 VOLTS • Glass Passivated Junctions with Center Gate Geometry for Greater • • • Parameter Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Blocking Voltage to 800 Volts Pb−Free Packages are Available* G A K MARKING DIAGRAM 4 TO−220AB CASE 221A STYLE 3 AY WW 640x 1 2 3 x A Y WW = 0, 1, 2, 3, 4 or 5 = Assembly Location = Year = Work Week PIN ASSIGNMENT 1 Cathode 2 Anode 3 Gate 4 Anode ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2004 December, 2004 − Rev. 3 1 Publication Order Number: 2N6400/D 2N6400 Series MAXIMUM RATINGS* (TJ = 25°C unless otherwise noted) Symbol Rating Peak Repetitive Off−State Voltage (Note 1) (TJ = 40 to 125°C, Sine Wave 50 to 60 Hz; Gate Open) 2N6400 2N6401 2N6402 2N6403 2N6404 2N6405 VDRM, VRRM On-State Current RMS (180° Conduction Angles; TC = 100°C) Value Unit V 50 100 200 400 600 800 IT(RMS) 16 A Average On-State Current (180° Conduction Angles; TC = 100°C) IT(AV) 10 A Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 90°C) ITSM 160 A I2t 145 A2s Circuit Fusing Considerations (t = 8.3 ms) Forward Peak Gate Power (Pulse Width ≤ 1.0 s, TC = 100°C) PGM 20 W PG(AV) 0.5 W IGM 2.0 A Operating Junction Temperature Range TJ −40 to +125 °C Storage Temperature Range Tstg −40 to +150 °C Forward Average Gate Power (t = 8.3 ms, TC = 100°C) Forward Peak Gate Current (Pulse Width ≤ 1.0 s, TC = 100°C) Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction−to−Case Maximum Lead Temperature for Soldering Purposes 1/8 in from Case for 10 Seconds Max Unit RJC 1.5 °C/W TL 260 °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Symbol Characteristic Min Typ Max Unit − − − − 10 2.0 A mA OFF CHARACTERISTICS * Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) TJ = 25°C TJ = 125°C IDRM, IRRM ON CHARACTERISTICS *Peak Forward On−State Voltage (ITM = 32 A Peak, Pulse Width ≤ 1 ms, Duty Cycle ≤ 2%) VTM − − 1.7 V * Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 100 ) IGT − − 9.0 − 30 60 mA − − 0.7 − 1.5 2.5 * Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 100 ) TC = 25°C TC = −40°C VGT TC = 25°C TC = −40°C V Gate Non−Trigger Voltage (VD = 12 Vdc, RL = 100 ), TC = +125°C VGD 0.2 − − V * Holding Current TC = 25°C (VD = 12 Vdc, Initiating Current = 200 mA, Gate Open) *TC = −40°C IH − 18 40 mA − − 60 Turn-On Time (ITM = 16 A, IGT = 40 mAdc, VD = Rated VDRM) tgt − 1.0 − Turn-Off Time (ITM = 16 A, IR = 16 A, VD = Rated VDRM) TC = 25°C TJ = +125°C tq − − 15 35 − − − 50 − s s DYNAMIC CHARACTERISTICS Critical Rate−of−Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform) TJ = +125°C *Indicates JEDEC Registered Data. http://onsemi.com 2 dv/dt V/s 2N6400 Series Voltage Current Characteristic of SCR + Current Symbol Parameter VDRM Peak Repetitive Off State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak On State Voltage IH Holding Current Anode + VTM on state IH IRRM at VRRM Reverse Blocking Region (off state) Reverse Avalanche Region + Voltage IDRM at VDRM Forward Blocking Region (off state) Anode − 16 124 P(AV) , AVERAGE POWER (WATTS) TC, MAXIMUM CASE TEMPERATURE (° C) 128 α α = CONDUCTION ANGLE 120 116 112 dc 108 104 100 α = 30° 0 60° 90° 180° 120° 7.0 5.0 6.0 1.0 2.0 3.0 4.0 8.0 9.0 IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS) 180° 14 TJ ≈ 125°C 12 Figure 1. Average Current Derating 120° dc 60° 10 α = 30° 8.0 6.0 4.0 α α = CONDUCTION ANGLE 2.0 10 90° 0 5.0 6.0 1.0 2.0 3.0 4.0 7.0 8.0 9.0 IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS) 0 10 Figure 2. Maximum On−State Power Dissipation http://onsemi.com 3 2N6400 Series 200 100 50 30 20 TJ = 25°C 10 125°C 7.0 5.0 160 3.0 2.0 150 140 1.0 0.7 130 0.5 TJ = 125°C f = 60 Hz 120 0.3 SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT 110 0.2 0.4 0.8 1.2 1.6 2.0 2.4 2.8 4.0 3.2 3.6 vTM, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS) 1.0 4.4 2.0 3.0 4.0 6.0 8.0 10 NUMBER OF CYCLES Figure 3. On−State Characteristics r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 CYCLE I TSM , PEAK SURGE CURRENT (AMP) iTM , INSTANTANEOUS ON−STATE FORWARD CURRENT (AMPS) 70 Figure 4. Maximum Non−Repetitive Surge Current 1.0 0.7 0.5 0.3 0.2 ZJC(t) = RJC • r(t) 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 t, TIME (ms) 100 Figure 5. Thermal Response http://onsemi.com 4 200 300 500 1.0 k 2.0 k 3.0 k 5.0 k 10 k 2N6400 Series TYPICAL CHARACTERISTICS OFF-STATE VOLTAGE = 12 V RL = 50 30 20 TJ = −40°C 10 7.0 5.0 25°C 3.0 2.0 125°C 100 I GT, GATE TRIGGER CURRENT (mA) i GT, PEAK GATE CURRENT (mA) 100 70 50 1.0 0.2 0.5 1.0 2.0 5.0 10 20 PULSE WIDTH (ms) 50 100 10 1 −40 −25 200 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 95 110 125 Figure 7. Typical Gate Trigger Current versus Junction Temperature Figure 6. Typical Gate Trigger Current versus Pulse Width 1.0 100 0.9 IH , HOLDING CURRENT (mA) VGT, GATE TRIGGER VOLTAGE (VOLTS) −10 0.8 0.7 0.6 0.5 0.4 10 0.3 0.2 −40 −25 −10 5 20 35 50 65 80 95 110 1 −40 −25 −10 125 5 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 8. Typical Gate Trigger Voltage versus Junction Temperature Figure 9. Typical Holding Current versus Junction Temperature 110 125 ORDERING INFORMATION Device Package 2N6400 TO−220AB 2N6401 TO−220AB 2N6401G TO−220AB (Pb−Free) 2N6402 TO−220AB 2N6403 TO−220AB 2N6404 TO−220AB 2N6405 TO−220AB 2N6405G TO−220AB (Pb−Free) Shipping† 500 Units / Box †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 2N6400 Series PACKAGE DIMENSIONS TO−220AB CASE 221A−09 ISSUE AA B F −T− SEATING PLANE C 4 T S A Q 1 2 3 H K DIM A B C D F G H J K L N Q R S T U V Z U Z L V R G D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 3: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 CATHODE ANODE GATE ANODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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