ONSEMI NTR3162PT3G

NTR3162P
Power MOSFET
−20 V, −3.6 A, Single P−Channel, SOT−23
Features
•
•
•
•
Low RDS(on) at Low Gate Voltage
−0.3 V Low Threshold Voltage
Fast Switching Speed
This is a Pb−Free Device
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V(BR)DSS
RDS(on) MAX
ID MAX
70 mW @ −4.5 V
−2.2 A
95 mW @ −2.5 V
−1.9 A
120 mW @ −1.8 V
−1.7 A
Applications
• Battery Management
• Load Switch in PWM
• Battery Protection
−20 V
SIMPLIFIED SCHEMATIC
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Unit
−20
V
Gate−to−Source Voltage
VGS
±8
V
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
t≤5s
TA = 25°C
Steady
State
TA = 85°C
−2.2
ID
(Top View)
0.48
TA = 25°C
W
PD
−10.7
A
TJ,
Tstg
−55 to
150
°C
Source Current (Body Diode)
IS
−0.6
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
Operating Junction and Storage Temperature
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter
MARKING DIAGRAM/
PIN ASSIGNMENT
1.25
IDM
tp = 10 ms
Source
A
−3.6
t≤5s
Pulsed Drain Current
−1.6
Drain
2
Continuous Drain
Current (Note 1)
Gate
3
Value
VDSS
1
Symbol
Drain−to−Source Voltage
Symbol
Max
Unit
Junction−to−Ambient − Steady State (Note 1)
RqJA
260
°C/W
Junction−to−Ambient − t < 10 s (Note 1)
RqJA
100
3
3
Drain
1
2
SOT−23
CASE 318
STYLE 21
TRDMG
G
1
1
Gate
2
Source
TRD
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
Device
Package
Shipping†
NTR3162PT1G
SOT−23
(Pb−Free)
3000 /
Tape & Reel
NTR3162PT3G
SOT−23
(Pb−Free)
10000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2008
May, 2008 − Rev. 0
1
Publication Order Number:
NTR3162P/D
NTR3162P
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Conditions
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = −250 mA
−20
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
/TJ
ID = −250 mA, Reference to 25°C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V, VDS = −16 V, TJ = 25°C
VGS = 0 V, VDS = −16 V, TJ = 85°C
−1.0
−5.0
mA
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = "8 V
$100
nA
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = −250 mA
−1.0
V
Negative Threshold Temperature
Coefficient
VGS(TH)
/TJ
Drain−to−Source On−Resistance
RDS(on)
Parameter
Typ
Max
Units
OFF CHARACTERISTICS
V
14.5
mV/°C
ON CHARACTERISTICS (Note 3)
Forward Transconductance
−0.3
−0.6
2.5
gFS
mV/°C
VGS = −4.5 V, ID = −2.2 A
48
70
mW
VGS = −2.5 V, ID = −1.9 A
57
95
VGS = −1.8 V, ID = −1.7 A
72
120
VGS = −1.5 V, ID = −1.0 A
88
VDS = −5.0 V, ID = −2.2 A
9.0
S
940
pF
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VGS = 0 V, f = 1.0 MHz,
VDS = −10 V
140
100
nC
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
2.7
RG
6.0
W
td(on)
8.0
ns
Gate Resistance
10.3
VGS = −4.5 V, VDS = −10 V,
ID = −3.6 A
0.5
1.4
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(off)
VGS = −4.5 V, VDD = −10 V,
ID = −3.6 A, RG = 6 W
tf
15
31
50
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V, IS = −1.0 A, TJ = 25°C
0.7
25
VGS = 0 V, ID = −1.0 A,
dISD/dt = 100 A/ms
QRR
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2
V
ns
8.0
17
11
2. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
1.2
nC
NTR3162P
P−CHANNEL TYPICAL CHARACTERISTICS
10.0
10
−2.0 V
8.0
−1.8 V
7.0
−1.5 V
6.0
5.0
4.0
3.0
−1.2 V
2.0
1.0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
7.0
6.0
5.0
4.0
2.0
1.0
125°C
0.0
0.5
0.75
TJ = −55°C
1
1.25
1.5
1.75
−VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
ID = −2.2 A
TJ = 25°C
0.25
0.20
0.15
0.10
0.05
1
1.5
2
2.5
3
3.5
4
4.5
−VGS, GATE VOLTAGE (V)
5
2
0.30
TJ = 25°C
0.25
0.20
0.15
VGS = −1.5 V
0.10
VGS = −1.8 V
VGS = −2.5 V
0.05
0
VGS = −4.5 V
0
1
2
3
4
5
6
7
8
9
10
−ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
100000
1.6
1.5
VGS = 0 V
ID = −2.2 A
VGS = −4.5 V
1.4
TJ = 150°C
−IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
25°C
3.0
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.30
0
0.5
8.0
Figure 1. On−Region Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
VDS = −5 V
9.0
−ID, DRAIN CURRENT (A)
−ID, DRAIN CURRENT (A)
TJ = 25°C
VGS = −5 V − −2.5 V
9.0
1.3
1.2
10000
1.1
1
0.9
0.8
TJ = 125°C
0.7
0.6
−50
−25
0
25
50
75
100
125
150
1000
0
2
4
6
8
10
12
14
16
18
TJ, JUNCTION TEMPERATURE (°C)
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
20
VGS = 0 V
TJ = 25°C
f = 1 MHz
Ciss
Coss
Crss
0
5
10
15
20
−VGS, GATE−TO−SOURCE VOLTAGE (V)
1400
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
4
8
−VDS
3
Qgs
6
Qgd
2
VDS = −10 A
ID = −3.6 A
TJ = 25°C
1
0
10
−VGS
0
1
2
3
4
5
6
7
8
9
4
2
10
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and Drain−to−Source
Voltage vs. Total Gate Charge
0
11
10
td(off)
tf
100
tr
10
td(on)
1
10
−IS, SOURCE CURRENT (A)
VDD = −10 V
ID = −3.6 A
VGS = −4.5 V
t, TIME (ns)
12
QT
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
1
5
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
NTR3162P
100
TJ = 150°C
1.0
TJ = 125°C
TJ = −55°C
TJ = 25°C
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
RG, GATE RESISTANCE (W)
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
0.8
80
ID = −250 mA
70
0.7
60
POWER (W)
−VGS(th) (V)
0.6
0.5
0.4
50
40
30
20
0.3
0.2
−50
10
−25
0
25
50
75
100
125
150
0
0.0001 0.001
0.01
0.1
1
10
100
TJ, JUNCTION TEMPERATURE (°C)
SINGLE PULSE TIME (s)
Figure 11. Threshold Voltage
Figure 12. Single Pulse Maximum Power
Dissipation
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4
1000
NTR3162P
−ID, DRAIN CURRENT (A)
100
10
VGS = −8 V
SINGLE PULSE
TC = 25°C
100 ms
1 ms
1
10 ms
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
1
dc
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
r(t), TRANSIENT THERMAL RESISTANCE
Figure 13. Maximum Rated Forward Biased
Safe Operating Area
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.0001
SINGLE PULSE
0.001
0.01
0.1
1
t, TIME (s)
Figure 14. Thermal Response
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5
10
100
1000
NTR3162P
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
DIM
A
A1
b
c
D
E
e
L
L1
HE
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
L1
VIEW C
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTR3162P/D