TYSEMI KDB6030L

Transistors
IC
SMD Type
Product specification
KDB6030L
TO-263
1 .2 7 -0+ 0.1.1
Features
+0.2
4.57-0.2
Low Crss (typical 175 pF).
5 .2 8 -0+ 0.2.2
Fast switching speed.
0.1max
+0.1
1.27-0.1
+0.1
0.81-0.1
2.54
2.54
+0.2
-0.2
+0.1
5.08-0.1
1 5 .2 5 -0+ 0.2.2
5 .6 0
@ VGS = 4.5 V
Low gate charge (typical 34 nC).
2 .5 4 -0+ 0.2.2
RDS(ON) = 0.020
@ VGS = 10 V
+0.1
1.27-0.1
8 .7 -0+ 0.2.2
52A, 30 V. RDS(ON) = 0.0135
Unit: mm
+0.2
0.4-0.2
gate
11Gate
drain
22Drain
source
33Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to Source Voltage
VDSS
30
V
Gate to Source Voltage
VGS
Drain Current Continuous
ID
Drain Current Pulsed
Power dissipation @ TC=25
Derate above 25
Operating and Storage Temperature
20
V
52
A
156
A
PD
75
PD
0.5
TJ, TSTG
-65 to 175
W
W/
Thermal Resistance Junction to Case
R
JC
2
/W
Thermal Resistance Junction to Ambient
R
JA
62.5
/W
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[email protected]
4008-318-123
1 of 2
Transistors
IC
SMD Type
Product specification
KDB6030L
Electrical Characteristics Ta = 25
Parameter
Symbol
Single Pulse Drain-Source Avalanche Energy *
W DSS
Maximum Drain-Source Avalanche Current
Drain-Source Breakdown Voltage
Min
Typ
VDD = 15 V, ID = 21A
IAR
BVDSS
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Testconditons
Max
Unit
150
mJ
21
VGS = 0 V, ID = 250
ID = 250
30
A
37
A, Referenced to 25
IDSS
VDS = 24 V, VGS = 0 V
A
V
mV/
10
A
Gate-Body Leakage, Forward
IGSSF
VGS = 20 V, VDS = 0 V
100
nA
Gate-Body Leakage, Reverse
IGSSR
VGS = -20 V, VDS = 0 V
-100
nA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250
3
V
Gate Threshold Voltage Temperature
Coefficient
ID = 250
Static Drain-Source On-Resistance
RDS(on)
1
A
-4
A, Referenced to 25
0.0095 0.0135
VGS = 10 V, ID = 26 A,TJ = 125
0.014
0.023
0.015
0.02
VGS = 4.5 V, ID =21 A,
ID(on)
VGS = 10 V, VDS = 10 V
60
On-State Drain Current
ID(on)
VGS = 4.5 V, VDS = 10 V
15
gFS
Input Capacitance
Ciss
Output Capacitance
Coss
mV/
VGS = 10 V, ID = 26 A
On-State Drain Current
Forward Transconductance
1.6
VDS = 10 V, ID = 26 A
VDS = 15 V, VGS = 0 V,f = 1.0 MHz
m
A
37
S
1230
pF
640
pF
Reverse Transfer Capacitance
Crss
175
Turn-On Delay Time
td(on)
7.6
15
ns
Turn-On Rise Time
tr
150
210
ns
Turn-Off Delay Time
td(off)
29
46
ns
17
27
ns
34
46
nC
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Maximum Continuous Drain–Source Diode
Forward Current *
VDD = 15 V, ID = 52 A,VGS = 10 V,
RGEN = 24 *
VDS = 12 V, ID = 26A,VGS = 10 V *
pF
6
nC
8
nC
IS
52
A
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 26 A *
0.91
1.3
V
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 26 A *TJ=125
0.8
1.2
V
* Pulse Test: Pulse Width
300 s, Duty Cycle
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