Transistors IC SMD Type 100V N-Channel PowerTrench MOSFET KDD3670 +0.15 6.50-0.15 +0.2 5.30-0.2 Features Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.80-0.1 Fast switching speed High performance trench technology for extremely low RDS(ON) 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 High power and current handling capability 0.127 max +0.28 1.50-0.1 Low gate charge (57 nC typical) +0.15 0.50-0.15 +0.2 9.70-0.2 @ VGS = 6 V 3.80 RDS(ON) = 35m +0.15 5.55-0.15 @ VGS = 10 V +0.25 2.65-0.1 34 A, 100 V. RDS(ON) = 32m +0.15 1.50-0.15 TO-252 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to Source Voltage Parameter VDSS 100 V Gate to Source Voltage VGS 20 V Drain Current Continuous (Note 1) ID Drain Current Pulsed Power dissipation @ TC=25 (Note 1a) Power dissipation @ Ta=25 (Note 1b) Operating and Storage Temperature A A 83 (Note 1) Power dissipation @ Ta=25 34 100 PD 3.8 W 1.6 TJ, TSTG -55 to 175 Thermal Resistance Junction to Case R JC 1.8 /W Thermal Resistance Junction to Ambient R JA 96 /W www.kexin.com.cn 1 Transistors IC SMD Type KDD3670 Electrical Characteristics Ta = 25 Parameter Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage Symbol W DSS IAR BVDSS Breakdown Voltage Temperature Coefficient Min Typ VDD = 50 V, ID = 7.3A (Not 2) ( Not 2) Max Unit 360 mJ 7.3 VGS = 0 V, ID = 250 ID = 250 A 100 92 A, Referenced to 25 A V mV/ Zero Gate Voltage Drain Current IDSS VDS = 80 V, VGS = 0 V 1 Gate-Body Leakage, Forward IGSSF VGS = 20 V, VDS = 0 V 100 nA Gate-Body Leakage, Reverse IGSSR VGS = -20 V, VDS = 0 V -100 nA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 4 V Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID = 250 RDS(on) A 2 2.5 -7.2 A, Referenced to 25 22 32 VGS = 10 V, ID = 7.3 A,TJ = 125 39 56 VGS = 6 V, ID =7 A, 24 35 ID(on) VGS = 10 V, VDS = 5 V 25 gFS VDS = 5 V, ID = 7.3 A 15 Input Capacitance Ciss VDS = 50 V, VGS = 0 V,f = 1.0 MHz A mV/ VGS = 10 V, ID = 7.3 A Forward Transconductance On-State Drain Current m A 31 S 2490 pF Output Capacitance Coss 265 pF Reverse Transfer Capacitance Crss 80 pF Turn-On Delay Time td(on) 16 Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 30 V, ID = 1 A,VGS = 10 V, RGEN =6 26 ns 10 18 ns 56 84 ns Turn-Off Fall Time tf 25 40 ns Total Gate Charge Qg 57 80 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage 2 Testconditons www.kexin.com.cn VDS = 50 V, ID = 7.3 A,VGS = 10 V (Note 2) 11 nC 15 nC IS VSD VGS = 0 V, IS = 2.7 A (Not 2) 0.72 2.7 A 1.2 V