MOSFET IC IC SMD Type Product specification KI8205A TSSOP-8 Features Unit: mm 6.5 A, 20 V. rDS(on) = 0.025 @ VGS = 4.5 V rDS(on) = 0.029 @ VGS = 2.5 V. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS Pulsed Drain Current Maximum Power Dissipation TA = 25 10 6.5 A IDM 20 A 2.0 W 1.6 W PD TA = 70 Thermal Resistance,Junction-to-Ambient R JA Thermal Resistance,Junction-to-Case R JC Jumction temperature and Storage temperature Tj.Tstg http://www.twtysemi.com V ID Continuous Drain Current 78 /W 40 /W -55 to +150 [email protected] 4008-318-123 1 of 2 MOSFET IC IC SMD Type Product specification KI8205A Electrical Characteristics Ta = 25 Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage IGSS Gate Threshold Voltage VGS(th) Drain-Source On-State Resistance * rDS(on) On-State Drain Current * ID(on) Testconditons VGS = 0 V, ID = 250 Min Typ Max 20 A V VDS = 20V , VGS = 0V 1 VDS = 20V , VGS = 0V , TJ =55 5 VDS = 0V , VGS = 100 8V VDS = VGS , ID = 250uA 0.5 1 1.5 VGS = 4.5V , ID = 6.5A 0.020 0.025 VGS = 2.5V , ID = 5.4A 0.023 0.029 VDS = 5V , VGS = 4.5V 15 VDS = 5V , ID =3A S pF 175 pF Output Capacitance Coss Reverse Transfer Capacitance Crss 85 Total Gate Charge Qg 7 Gate-Source Charge Qgs pF 10 nC 1.2 Gate-Drain Charge Qgd 1.9 Turn-On Delay Time td(on) 8 16 10 18 18 29 5 10 tr Turn-Off Delay Time td(off) Fall Time tf Maximum Continuous Drain-Source Diode Forward Current IS Diode Forward Voltage * * Pulse test; pulse width VSD 300 http://www.twtysemi.com s, duty cycle VDD = 10V ID = 1A , VGS = 4.5V , RG = 6 IS = 1.7 A, VGS = 0 V V 11 gfs Ciss Rise Time nA 700 Forward Transconductance * VDS = 10V , VGS = 4.5V , ID = 3A uA A Input Capacitance VDS = 10 V, VGS = 0 V,f = 1.0 MHz Unit 0.65 ns 1.3 A 1.2 V 2 %. [email protected] 4008-318-123 2 of 2