TYSEMI KI8205A

MOSFET
IC
IC
SMD Type
Product specification
KI8205A
TSSOP-8
Features
Unit: mm
6.5 A, 20 V. rDS(on) = 0.025
@ VGS = 4.5 V
rDS(on) = 0.029
@ VGS = 2.5 V.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
Pulsed Drain Current
Maximum Power Dissipation
TA = 25
10
6.5
A
IDM
20
A
2.0
W
1.6
W
PD
TA = 70
Thermal Resistance,Junction-to-Ambient
R
JA
Thermal Resistance,Junction-to-Case
R
JC
Jumction temperature and Storage temperature
Tj.Tstg
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V
ID
Continuous Drain Current
78
/W
40
/W
-55 to +150
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4008-318-123
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MOSFET
IC
IC
SMD Type
Product specification
KI8205A
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-Source Breakdown Voltage
VDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage
IGSS
Gate Threshold Voltage
VGS(th)
Drain-Source On-State Resistance *
rDS(on)
On-State Drain Current *
ID(on)
Testconditons
VGS = 0 V, ID = 250
Min
Typ
Max
20
A
V
VDS = 20V , VGS = 0V
1
VDS = 20V , VGS = 0V , TJ =55
5
VDS = 0V , VGS =
100
8V
VDS = VGS , ID = 250uA
0.5
1
1.5
VGS = 4.5V , ID = 6.5A
0.020 0.025
VGS = 2.5V , ID = 5.4A
0.023 0.029
VDS = 5V , VGS = 4.5V
15
VDS = 5V , ID =3A
S
pF
175
pF
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
85
Total Gate Charge
Qg
7
Gate-Source Charge
Qgs
pF
10
nC
1.2
Gate-Drain Charge
Qgd
1.9
Turn-On Delay Time
td(on)
8
16
10
18
18
29
5
10
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Maximum Continuous Drain-Source Diode
Forward Current
IS
Diode Forward Voltage *
* Pulse test; pulse width
VSD
300
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s, duty cycle
VDD = 10V
ID = 1A , VGS = 4.5V , RG = 6
IS = 1.7 A, VGS = 0 V
V
11
gfs
Ciss
Rise Time
nA
700
Forward Transconductance *
VDS = 10V , VGS = 4.5V , ID = 3A
uA
A
Input Capacitance
VDS = 10 V, VGS = 0 V,f = 1.0 MHz
Unit
0.65
ns
1.3
A
1.2
V
2 %.
[email protected]
4008-318-123
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