IC IC SMD Type Dual 30V P-Channel PowerTrench MOSFET KDS4953 Features -5 A, -30 V. RDS(ON) = 55m @ VGS = -10V RDS(ON) = 95m @ VGS =-4.5V Low gate charge(6nC typical) High performance trench technology for extremely low RDS(ON) High power and current handling capability Fast switching speed 1: Source 1 3: Source 2 2: Gate 1 4: Gate 2 7,8: Drain 1 5,6: Drain 2 Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to Source Voltage Parameter VDSS -30 V Gate to Source Voltage VGS 20 V Drain Current Continuous (Note 1a) ID Drain Current Pulsed Power Dissipation for Single Operation (Note 1a) Power Dissipation for Single Operation (Note 1b) A A 2 PD Power Dissipation for Single Operation (Note 1c) Operating and Storage Temperature -5 -20 1.6 W 1 TJ, TSTG -55 to 175 Thermal Resistance Junction to Ambient (Note 1a) R JA 78 /W Thermal Resistance Junction to Case (Note 1) R JC 40 /W www.kexin.com.cn 1 IC IC SMD Type KDS4953 Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Symbol BVDSS Breakdown Voltage Temperature Coefficient VGS = 0 V, ID = -250 ID = -250 A Min Typ Max -30 V -23 A, Referenced to 25 Unit mV/ Zero Gate Voltage Drain Current IDSS VDS = -24 V, VGS = 0 V -1 Gate-Body Leakage, Forward IGSSF VGS = -20V, VDS = 0 V 100 nA Gate-Body Leakage, Reverse IGSSR VGS = 20 V, VDS = 0 V -100 nA Gate Threshold Voltage(Not 2) VGS(th) VDS = VGS, ID = -250 -3 V Gate Threshold Voltage Temperature Coefficient(Not 2) Static Drain-Source On-Resistance(Not 2) On–State Drain Current ID = -250 RDS(on) ID(on) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss A -1 -1.7 4.5 A, Referenced to 25 mV/ VGS = -10 V, ID =-5 A 46 55 VGS = -4.5 V, ID = -3.3 A 70 95 VGS = -10 V, ID =-5 A,TJ = 125 63 85 VGS = -10 V, VDS = -5 V VDS = -5 V, ID = -5A VDS = -15 V, VGS = 0 V,f = 1.0 MHz A -20 m A 10 S 528 pF 132 pF Reverse Transfer Capacitance Crss 70 Turn-On Delay Time td(on) 7 14 ns Turn-On Rise Time tr 13 24 ns Turn-Off Delay Time td(off) Turn-Off Fall Time Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Drain–Source Diode Forward Voltage www.kexin.com.cn VDD = -15 V, ID = -1 A,VGS = -10 V, RGEN = 6 (Note 2) tf Total Gate Charge Maximum Continuous Drain–Source Diode Forward Current 2 Testconditons VDS = -15 V, ID =-5 A,VGS=-5V(Note 2) 14 25 ns 9 17 ns 6 9 VGS=0V,IS=-1.3A (Note 2) nC 2.2 nC 2 nC IS VSD pF -0.8 -1.3 A -1.2 V