Transistors IC SMD Type Product specification KDB5690 1 .2 7 -0+ 0.1.1 TO-263 Features +0.1 1.27-0.1 Critical DC electrical parameters specified at 5 .2 8 -0+ 0.2.2 Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High performance trench technology for extremely low RDS(ON). 0.1max +0.1 1.27-0.1 elevated temperature. +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 maximum junction temperature rating. +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 5 .6 0 @ VGS = 6 V 2 .5 4 -0+ 0.2.2 RDS(ON) = 0.032 175 +0.2 4.57-0.2 @ VGS = 10 V 8 .7 -0+ 0.2.2 32 A, 60 V. RDS(ON) = 0.027 Unit: mm +0.2 0.4-0.2 gate 11Gate drain 22Drain source 33Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGS Drain Current Continuous ID Drain Current Pulsed Power dissipation @ TC=25 Derate above 25 Operating and Storage Temperature 20 32 V A 100 A PD 58 W PD 0.4 TJ, TSTG -65 to 175 W/ Thermal Resistance Junction to Case R JC 2.6 /W Thermal Resistance Junction to Ambient R JA 62.5 /W http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors IC SMD Type Product specification KDB5690 Electrical Characteristics Ta = 25 Parameter Symbol Single Pulse Drain-Source Avalanche Energy * W DSS Maximum Drain-Source Avalanche Current Drain–Source Breakdown Voltage Testconditons Min Typ VDD = 30 V, ID = 32A IAR BVDSS Breakdown Voltage Temperature Coefficient VGS = 0 V, ID = 250 ID = 250 Max Unit 80 mJ 32 A 60 A V 61 A, Referenced to 25 mV/ Zero Gate Voltage Drain Current IDSS VDS = 48 V, VGS = 0 V 1 Gate-Body Leakage, Forward IGSSF VGS = 20 V, VDS = 0 V 100 nA Gate-Body Leakage, Reverse IGSSR VGS = -20 V, VDS = 0 V -100 nA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 4 V Gate Threshold Voltage Temperature Coefficient ID = 250 Static Drain-Source On-Resistance RDS(on) On–State Drain Current ID(on) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss 2 A 2.5 -6.4 A, Referenced to 25 mV/ VGS = 10 V, ID = 16 A 0.021 0.027 VGS = 10 V, ID = 16 A,TJ = 125 0.042 0.055 VGS = 6 V, ID =15 A, 0.024 0.032 VGS = 10 V, VDS = 5 V 50 m A VDS = 5 V, ID = 16 A VDS = 25 V, VGS = 0 V,f = 1.0 MHz A 32 S 1120 pF 160 pF Reverse Transfer Capacitance Crss 80 Turn-On Delay Time td(on) 10 18 ns Turn-On Rise Time tr 9 18 ns Turn-Off Delay Time td(off) 24 39 ns 10 18 ns 23 33 nC Turn-Off Fall Time tf Total Gate Charge Qg Gate–Source Charge Qgs Gate–Drain Charge Qgd Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage * Pulse Test: Pulse Width http://www.twtysemi.com VDS = 1 V, ID = 16 A,VGS = 10 V * 3.9 nC 6.8 nC IS VSD 300 s, Duty Cycle VDD = 30 V, ID = 1 A,VGS = 10 V, RGEN =6 * VGS = 0 V, IS = 16 A * pF 0.92 32 A 1.2 V 2.0% [email protected] 4008-318-123 2of 2