Diodes IC Transistors Transistor T SMD Type Product specification KST9015 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 Complementary to KST9014 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage Parameter VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -0.1 A Collector Power Dissipation PC 0.2 W Junction Temperature Tj 150 Storage Temperature Tstg -55 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage VCBO Ic=-100uA, IE=0 -50 V Collector-emitter breakdown voltage VCEO Ic=-1mA, IB=0 -45 V Emitter-base Breakdown voltage VEBO IE=-100ìA, IC=0 -5 Collector cutoff current ICBO VCB=-50V, IE=0 -0.1 A Emitter cutoff current IEBO VEB=-5V, IC=0 -0.1 A hFE VCE=-5V, IC=-1mA DC current gain 200 V 1000 Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB=-10mA -0.3 V Base-emitter saturation voltage VBE(sat) IC=-100mA, IB=-10mA -1 V Transition frequency fT VCE=-5V, IC=-10mA,f=30MHZ 150 MHz hFE Classification M6 Marking Rank L H hFE 200 to 450 450 to 1000 http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Diodes IC Transistors Transistor T SMD Type Product specification KST9015 Typical Characteristics http://www.twtysemi.com [email protected] 4008-318-123 2 of 2