Transistor IC Transistors DIP SMDType Type SMD Type Product specification C2611 SOT-89 Unit: mm +0.1 -0.1 +0.1 -0.1 4.50 ■ Features 1.50 +0.1 1.80-0.1 +0.1 2.50-0.1 ● Collector Current: IC=0.2A 2 3 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 -0.1 2.60 +0.1 -0.1 +0.1 0.80-0.1 1 +0.1 0.48-0.1 +0.1 4.00-0.1 ● Collector-emitter Voltage: V(BR)CEO=400V 1. Base 0.40 +0.1 3.00-0.1 2. Collector 3. Emiitter ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit Collector-Base Voltage Parameter VCBO 600 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 7 V Collector Current -Continuous IC 0.2 A Collector Dissipation PC 0.5 W Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55 to 150 ℃ Testconditons Min ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC = 100μA , IE = 0 600 V Collector-emitter breakdown voltage V(BR)CEO IC = 1mA , IB = 0 400 V Emitter-base Breakdown voltage V(BR)EBO IE = 100μA , IC = 0 7 V Collector-base cut-off current ICBO VCB = 600V , IE = 0 100 μA Emitter cut-off current IEBO VEB=7V,IC=0 100 μA DC current gain hFE VCE = 20V , IC = 20mA 10 VCE = 10V , IC = 0.25mA 5 40 Collector-emitter saturation voltage VCE(sat) IC= 50mA, IB= 10 mA 0.5 V Base-emitter saturation voltage VBE(sat) IC= 50mA, IB= 10 mA 1.2 V IB1=-IB2=5mA, IC=50mA, VCC=45V 0.3 μs Fall time tf Storage time ts IB1=-IB2=5mA, IC=50mA, VCC=45V Transition frequency fT VCE = 20 V , IC = 20 mA , f = 1 MHz 1.5 8 μs MHz ■ hFE Classification Rank hFE 10～15 15～20 http://www.twtysemi.com 20～25 25～30 30～35 35～40 [email protected] 4008-318-123 1 of 2 Transistor IC Transistors DIP SMDType Type SMD Type Product specification C2611 ■ Typical Characteristics http://www.twtysemi.com [email protected] 4008-318-123 2 of 2