SMD Type Product specification 2SB772 SOT-89 ■ Features Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 ● PNP transistor High current output up to 3A 2.50±0.1 4.00±0.1 ● Low Saturation Voltage ● Complement to 2SD882 0.80±0.1 0.53±0.1 0.44±0.1 0.40±0.1 0.48±0.1 3 2 2.60±0.1 1 3.00±0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage VCEO -30 V Emitter to Base Voltage VEBO -6 V Collector Current to Continuous IC -3 A Collector Dissipation Pc 0.5 W Junction Temperature TJ 150 ℃ Storage Temperature Tstg -55 to 150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Collector-base breakdown voltage VCBO Test Conditons Min Ic=-100uA ,IE=0 -40 Typ Max Unit V Collector-emitter breakdown voltage VCEO IC= -10 mA , IB=0 -30 V Emitter-base breakdown voltage VEBO IE= -100 uA ,IC=0 -6 V Collector cut-off current ICBO VCB=-40 V , IE=0 Emitter cut-off current IEBO VEB=-6V , IC=0 DC current gain hFE VCE= -2V, IC= -1A 60 VCE=-2V, IC= -100mA 32 -1 μA -1 μA 400 Collector-emitter saturation voltage VCE(sat) IC=-2A, IB=- 0.2A -0.5 V Base-emitter saturation voltage VBE(sat) IC=-2A, IB= -0.2A -1.5 V Transition frequency fT VCE=-5 V, IC=-0.1mA,f = 10MHz 50 MHz ■ hFE Classification Rank R Q P E h FE 60～120 100～200 160～320 200～400 http://www.twtysemi.com [email protected] 4008-318-123 1 of 3 SMD Type Product specification 2SB772 Typical Characteristics http://www.twtysemi.com [email protected] 4008-318-123 2 of 3 SMD Type Product specification 2SB772 http://www.twtysemi.com [email protected] 4008-318-123 3 of 3