UC1725 UC2725 UC3725 Isolated High Side FET Driver FEATURES DESCRIPTION • Receives Both Power and Signal Across the Isolation Boundary • 9 to 15 Volt High Level Gate Drive • Under-voltage Lockout The UC1725 and its companion chip, the UC1724, provide all the necessary features to drive an isolated MOSFET transistor from a TTL input signal. A unique modulation scheme is used to transmit both power and signals across an isolation boundary with a minimum of external components. • Programmable Over-current Shutdown and Restart • Output Enable Function Protection circuitry, including under-voltage lockout, over-current shutdown, and gate voltage clamping provide fault protection for the MOSFET. High level gate drive is guaranteed to be greater than 9 volts and less than 15 volts under all conditions. Uses include isolated off-line full bridge and half bridge drives for driving motors, switches, and any other load requiring full electrical isolation. The UC1725 is characterized for operation over the full military temperature range of -55°C to +125°C while the UC2725 and UC3725 are characterized for -25°C to +85°C and 0°C to +70°C respectively. BLOCK DIAGRAM UDG-92051-1 1/94 UC1725 UC2725 UC3725 CONNECTION DIAGRAMS ABSOLUTE MAXIMUM RATINGS Supply Voltage (pin 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Power inputs (pins 7 & 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Output current, source or sink (pin 2) DC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5A Pulse (0.5 us) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0A Enable and Current limit inputs (pins 4 & 6). . . . . . . . -0.3 to 6V Power Dissipation at TA ≤ 25°C (DIL-8) . . . . . . . . . . . . . . . . 1W Power Dissipation at TA ≤ 25°C (SO-14) . . . . . . . . . . . . 725mW Lead Temperature (Soldering, 10 Seconds) . . . . . . . . . . 300°C PLCC-20 (Top View) Q Package Note 1: Unless otherwise indicated, voltages are referenced to ground and currents are positive into, negative out of, the specified terminals (pin numbers refer to DIL-8 package). Note 2: See Unitrode Integrated Circuits databook for information regarding thermal specifications and limitations of packages. DIL-8 (Top View) J Or N Package SOIC-16 (Top View) DW Package PACKAGE PIN FUNCTION FUNCTION PIN N/C ISENSE N/C Timing Enable N/C Input A N/C Input B Gnd VCC N/C Output 1 2 3-5 6 7 8-9 11 12-14 15 16 17 18-19 20 DIL-16 (Top View) JE Or NE Package ELECTRICAL CHARACTERISTICS: (Unless otherwise stated, these specifications apply for -55°C≤TA≤+125°C for UC1725; -25°C≤TA≤+85°C for UC2725; 0°C≤TA≤+70°C for UC3725; VCC (pin 3) = 0 to 15V, RT=10k, CT=2.2nf, TA =TJ, pin numbers refer to DIL-8 package.) PARAMETER TEST CONDITIONS MIN TYP MAX UNITS POWER INPUT SECTION (PINS 7 & 8) Forward Diode Drop, Schottky Rectifier IF = 50ma .55 .7 V IF = 500ma 1.1 1.5 V Input bias current VPIN4 = OV -1 -10 µA Threshold voltage Delay to outputs VPIN4 = 0 to 1V CURRENT LIMIT SECTION (PIN 4) 0.4 0.5 0.6 V 100 250 ns TIMING SECTION (PIN 5) Output Off Time 27 30 33 µs Upper Mono Threshold 6.3 7.0 7.7 V Lower Mono Threshold 1.9 2.0 2.3 V 7.0 Vcc/2 8.0 V HYSTERESIS AMPLIFIER (PINS 7 & 8) Input Open Circuit Voltage Inputs (pins 7 & 8), Open Circuited, TA= 25°C Input Impedance TA = 25°C Hysteresis Delay to Outputs VPIN7 - VPIN8 = VCC + 1V 2 23 28 33 kΩ 26.5 2*Vcc 100 30.5 V 300 ns UC1725 UC2725 UC3725 ELECTRICAL CHARACTERISTICS (cont.) (Unless otherwise stated, these specifications apply for -55°C≤TA≤+125°C for UC1725; -25°C≤TA≤+85°C for UC2725; 0°C≤TA≤+70°C for UC3725; VCC (pin 3) = 0 to 15V, Rt=10k, CT=2.2nf, TA =TJ, pin numbers refer to DIL-8 package.) PARAMETER ENABLE SECTION (PIN 6) TEST CONDITIONS High Level Input Voltage MIN 2.1 TYP MAX UNITS 1.4 V Low Level Input Voltage 1.4 .8 V Input Bias Current -250 -500 µA OUTPUT SECTION Output Low Level Output High Level Rise/Fall Time IOUT = 20mA 0.35 0.5 V IOUT = 200mA 0.6 2.5 V IOUT = -20mA IOUT = -200mA 13 12 13.5 13.4 V V VCC = 30V, Iout = -20mA 14 15 V CT = 1nf 30 60 ns 20mA, VCC = 8V 0.8 1.5 V UNDER VOLTAGE LOCKOUT UVLO Low Saturation Start-up Threshold 11.2 12 12.6 V Threshold Hysteresis .75 1.0 1.12 V 12 16 ma TOTAL STANDBY CURRENT Supply Current APPLICATION AND OPERATION INFORMATION add a damping resistor across the transformer secondary to minimize ringing and eliminate false triggering of the hysteresis amplifier as shown in Figure 3. INPUTS: Figure 1 shows the rectification and detection scheme used in the UC1725 to derive both power and signal information from the input waveform. Vcc is generated by peak detecting the input signal via the internal bridge rectifier and storing on a small external capacitor, C1. Note that this capacitor is also used to bypass high pulse currents in the output stage, and therefore should be placed direclty between pins 1 and 3 using minimal lead lengths. UDG-92048 FIGURE 2 - Input Waveform (DIL-8 Pin 7 - Pin 8) UDG-92047 FIGURE 1 - Input Stage Signal detection is performed by the internal hysteresis comparator which senses the polarity of the input signal as shown in Figure 2. This is accomplished by setting (resetting) the comparator only if the input signal exceeds Vcc (-Vcc). In some cases it may be necessary to UDG-92049 FIGURE 3 - Signal Detection 3 UC1725 UC2725 UC3725 capacitor and resistor as shown in Figure 4. This, in turn, controls the output off time according to the formula: TOFF= 1.28 • RC. If current limit feature is not required, simply ground pin 4 and leave pin 5 open. OUTPUT: Gate drive to the power FET is provided by a totem pole output stage capable of sourcing and sinking currents in excess of 1 amp. The undervoltage lockout circuit guarantees that the high level output will never be less than 9 volts. In addition, during undervoltage lockout, the output stage will actively sink current to eliminate the need for an external gate to source resistor. High level output is also clamped to 15 volts. Under high capacitive loading however, the output may overshoot 2 to 3 volts, due to the drivers’ inabitlity to switch from full to zero output current instantaneously. In a practical circuit this is not normally a concern. A few ohms of series gate resistance is normally required to prevent parasitic oscillations, and will also eliminate overshoot at the gate. UDG-92050 FIGURE 4 - Current Limit CURRENT LIMIT AND TIMING: Current sensing and shutdown can be implemented directly at the output using the scheme shown in Figure 4. Alternatively, a current transformer can be used in place of RSENSE. A small RC filter in series with the input (pin 4) is generally needed to eliminate the leading edge current spike caused by parasitic circuit capacitances being charged during turn on. Due to the speed of the current sense circuit, it is very important to ground CF directly to Gnd as shown to eliminate false triggering of the one shot caused by ground drops. ENABLE: An enable pin is provided as a fast, digital input that can be used in a number of applications to directly switch the output. Figure 6 shows a simple means of providing a fast, high voltage translation by using a small signal, high voltage transistor in a cascode configuration. Note that the UC1725 is still used to provide power, drive and protection circuitry for the power FET. One shot timing is easily programmed using an external UDG-92052 UDG-92053 FIGURE 6 - Using Enable Pin as a High Speed Input Path FIGURE 5 - Output Circuit UNITRODE INTEGRATED CIRCUITS 7 CONTINENTAL BLVD. • MERRIMACK, NH 03054 TEL. (603) 424-2410 • FAX (603) 424-3460 4 IMPORTANT NOTICE Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. 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