Product specification FMMTL619 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Very low equivalent on-resistance;RCE(sat)=160mÙ at 1.25A. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 1.25 A Peak pulse current ICM 2 A IB 200 mA Ptot 500 mW Tj,Tstg -55 to +150 Base current Power dissipation Operating and storage temperature range http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors IC SMD Type Product specification FMMTL619 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100ìA 100 210 V Collector-emitter breakdown voltage V(BR)CEO IC=5mA* 50 70 V Emitter-base breakdown voltage V(BR)EBO IE=100ìA 5 8.5 V Collector-base cut-off current ICBO Emitter-base current IEBO VCB=40V 10 nA VEB=4V 10 nA Collector-emitter saturation voltage IC=100mA, IB=10mA* VCE(sat) IC=250mA, IB=10mA* IC=500mA, IB=25mA* IC=1.25A, IB=125mA* 24 60 100 195 45 100 180 330 mV Base-emitter saturation voltage VBE(sat) IC=1.25A, IB=125mA* 1020 1100 mV Base-emitter ON voltage VBE(on) IC=1.25A, VCE=2V* 895 1000 mV DC current gain hFE Current-gain-bandwidth product fT Output capacitance Cobo Turn-on time t(on) Turn-off time t(off) * Pulse test: tp 300 ìs; d IC=10mA, VCE=5V IC=200mA, VCE=5V* IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=2A, VCE=5V* IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz 200 300 200 100 30 400 450 400 230 50 180 6 MHz 8 pF IC=1A, VCC=10V 182 ns IB1=-IB2=10mA 379 ns 0.02. Marking Marking L69 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2