Transistors IC SMD Type Medium Power Transistor FMMTL718 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features Very low equivalent on-resistance;RCE(sat)=210mÙ at 1.5A. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -20 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -5 V Collector current IC -1 A Peak pulse current ICM -2 A IB -200 mA Ptot -500 mW Tj,Tstg -55 to +150 Base current Power dissipation Operating and storage temperature range www.kexin.com.cn 1 Transistors IC SMD Type FMMTL718 Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100ìA -20 -65 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA* -20 -55 V Emitter-base breakdown voltage V(BR)EBO IE=-100ìA -5 -8.8 V Collector-base cut-off current ICBO Emitter-base current IEBO VCB=-15V -10 nA VEB=-4V -10 nA -50 -180 -320 -450 mV -33 -130 -230 -315 Collector-emitter saturation voltage IC=-100mA, IB=-10mA* VCE(sat) IC=-500mA, IB=-20mA* IC=-1A, IB=-50mA* IC=-1.5A,IB=-100mA Base-emitter saturation voltage VBE(sat) IC=-1.25A, IB=-100mA* -950 -1100 mV Base-emitter ON voltage VBE(on) IC=-1.25A, VCE=-2V* -850 mV DC current gain hFE Current-gain-bandwidth product fT IC=-10mA, VCE=-2V IC=-100mA, VCE=-2V* IC=-0.5A, VCE=-2V* IC=-1A, VCE=-2V* IC=-1.5A, VCE=-2V* IC=-50mA, VCE=-10V f=100MHz 300 300 200 120 50 -1000 500 450 320 200 80 265 MHz Output capacitance Cobo VCB=-10V, f=1MHz 9 Turn-on time t(on) IC=-1A, VCC=-10V 108 ns Turn-off time t(off) IB1=IB2=-10mA 121 ns * Pulse test: tp 300 ìs; d Marking Marking 2 Testconditons L78 www.kexin.com.cn 0.02. 12 pF